 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 1 re v 1.0 12 / 200 9 feature ? 1. 5 v 0. 0 75 v (jedec standard power supply ) ? 8 i nternal memory banks (ba0 - ba2) ? differential clock input (ck, ?? ) ? programmable ??? latency: 5, 6, 7, 8, 9 , 10 ? programmable additive latency: 0 , cl - 1, cl - 2 ? programmable sequential / interleave burst t ype ? programmable burst length: 4, 8 ? 8 bit prefetch architecture ? output driver impedance control ? w r ite leveling ? ocd calibration ? dynamic odt ( rtt_nom & rtt_wr) ? auto self - refresh ? self - refresh temperature ? rohs compliance ? packages: 78 - ball bga for x4 & x8 comp onents description the 1gb double - data - rate - 3 (ddr 3 ) drams is a h igh - speed cmos double data rate 3 2 sdram containing 1,073,741,824 bits. it is internally configured as an octal - bank dram. the 1gb chip is organized as 32 mbit x 4 i/o x 8 , or 16 mbit x 8 i/o x 8 bank device. these synchronous devices achieve high speed double - data - rate transfer rates of up to 1600 mb/sec/pin for general appli cations. the chip is designed to comply with all key ddr 3 dram key features and a ll of the control and address in puts are synchronized with a pair of externally supplied differential clocks. inputs are latched at the cross point of differential cl ocks (ck rising and ?? falling). all i/os are synchronized with a single ended dqs or differential dqs pair in a source synchronous fash ion. these devices operate with a single 1. 5 v 0. 0 75 v power sup ply and are available in bga packages.
1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 2 re v 1.0 12 / 200 9 pin configuration C 78 balls bga package (x 4 ) < top view> see the balls through the package a b c d e f g x 4 1 v s s v s s q v d d v s s q d q 2 n c v d d q v s s ? ? 2 n c d q 0 d q s ? ? ? n c ? ? ? ? ? ? 3 7 8 9 b a 0 v d d n c v s s v s s q d q 3 v s s n c v s s v d d n c d m d q 1 n c c k ? ? v d d q h j k l v s s v d d q v r e f d q a 3 a 5 v s s v d d ? ? b a 2 a 0 a 2 a 1 a 1 2 / ? ? n c a 1 0 / a p v d d a 4 b a 1 v e r f c a z q v d d q v s s q v s s q v d d o d t v s s n c m n v d d a 7 ? ? ? ? ? a 9 a 1 3 v d d a 6 a 8 a 1 1 n c v s s v s s n c n c v d d v s s v s s c k e 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 3 re v 1.0 12 / 200 9 pin configuration C 78 balls bga package (x 8 ) < top view> see the balls through the package a b c d e f g x 8 1 v s s v s s q v d d v s s q d q 2 d q 6 v d d q v s s ? ? 2 n c d q 0 d q s ? ? ? d q 4 ? ? ? ? ? ? 3 7 8 9 b a 0 v d d n c v s s v s s q d q 3 v s s d q 5 v s s v d d n u / ? ? ? ? d m / t d q s d q 1 d q 7 c k ? ? v d d q h j k l v s s v d d q v r e f d q a 3 a 5 v s s v d d ? ? b a 2 a 0 a 2 a 1 a 1 2 / ? ? n c a 1 0 / a p v d d a 4 b a 1 v e r f c a z q v d d q v s s q v s s q v d d o d t v s s n c m n v d d a 7 ? ? ? ? ? a 9 a 1 3 v d d a 6 a 8 a 1 1 n c v s s v s s n c n c v d d v s s v s s c k e 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 4 re v 1.0 12 / 200 9 input / output functional description symbol type function ck, ?? input clock: ck and ?? are differential clock inputs. all address and control input signals are sampled on the crossing of the positive edge of ck and negative edge of ?? . cke input clock enable: cke high activates, and cke low deactivates, internal c lock signals and device input buffers and output drivers. taking cke low provides precharge power - down and self - refresh operation (all banks idle), or active power - down (row active in any bank). cke is synchronous for power down entry and exit and for self - refresh entry. cke is asynchronous for self - refresh exit. after v ref has become stable during the power on and initialization sequence, it must be maintained for proper operation of the cke receiver. for proper self - refresh entry and exit, v ref must maint ain to this input. cke must be maintained high throughout read and write accesses. input buffers, excluding ck, ?? , odt and cke are disabled during power down. input buffers, excluding cke, are disabled during self - refresh. ?? input chip select: all comm and s are masked when ?? is registered high. ?? provides for external rank selection on systems with multiple memory ranks. ?? is considered part of the command code. ??? , ??? , ?? input command inputs: ??? , ??? and ?? (along with ?? ) define the command b eing entered. dm, ( dm u , dm l) input input data mask: dm is an input mask signal for write data. input data is masked when dm is sampled high coincident with that input data during a write access. dm is sampled on both edges of dqs. for x8 device, the funct ion of dm or t dqs / ? ??? is enabled by mode register a11 setting in mr1 ba0 - ba2 input bank address inputs: ba0, ba1, and ba2 define to which bank an active, read, write or precharge command is being applied. bank address also determines which mode register is to be accesse d during a mrs cycle. a0 C a13 input address inputs: provide the row address for activate commands and the column address for read/write commands to select one location out of the memory array in the respective bank. (a10/ap and a12/ ?? have additional fun ction as below. the address inputs also provide the op - code during mode register set commands. a12 / ?? input burst chop: a12/ ?? is sampled during read and write commands to determine if burst chop (on the fly) will be performed. (high - no burst chop; lo w - burst chopped). dq input/output data inputs/output: bi - directional data bus. dqu, dql dqs, ( ??? ) dqs l , ( ??? ? ), dqs u ,( ??? ? ) input/output data strobe: output with read data, input with write data. edge aligned with read data, centered with write dat a. the data strobes dqs, dqs l , dqs u are paire d with differential signals ??? , ???? , ???? , respectively, to provide differential pair signaling to the system during both reads and writes. ddr3 sdram supports differential data strobe only and does not suppor t single - ended. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 5 re v 1.0 12 / 200 9 symbol type function odt input on die termination: odt (registered high) enables termination resistance internal to the ddr3 sdram. when enabled, odt is applied to each dq, dqs, ??? and dm/tdqs, nu/ ???? (when tdqs is enabled via mode r egister a11=1 in mr1) signal for x8 configurations. the odt pin will be ignored if mr1and mr2 are programmed to disable rtt. ????? ? input active low asynchronous reset: reset is active when ????? is low, and inactive when ????? is high. ????? must be high during normal operation. ????? is a cmos rail to rail signal with dc high and low at 80% and 20% of vdd, i.e. 1.20v for dc high and 0.30v nc no connect: no internal electrical connection is present. v ddq supply dq power supply: 1. 5 v 0. 075 v v dd su pply power supply: 1. 5 v 0. 075 v v ssq supply dq ground v ss supply ground v refca supply reference voltage for ca v refdq supply r e ference voltage for dq zq supply reference pin for zq calibration. note: input only pins (ba0 - ba2, a0 - a13, ??? , ??? , ? ? , ?? , cke , odt, and ????? ) do not supply termination. ddr3 sdram addressing configuration nt5cb256m4cn nt5cb128m8cn # of bank 8 8 bank address ba0 C ba2 ba0 C ba2 auto precharge a10 / ap a10 / ap bl switch on the fly a12 / ?? ? a12 / ?? ? row address a 0 C a13 a0 C a13 column address a0 C a9, a11 a0 C a9 page size 2 kb 2 kb note: page size is the number of data delivered from the array to the internal sense amplifiers when an active command is registered. page size is per bank, calculated as follows: p age size = 2 colbits * org / 8 colbits = the number of column address bits ort = the number of i/o (dq) bits 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 6 re v 1.0 12 / 200 9 ordering information organization part number package speed clock (mbp / s) data rate (mb/s) cl - t rcd - t rp 256m x 4 nt5cb 256 m 4 cn - ac 78 - ball w bga 0.8mmx0.8mm pitch 400 ddr3 - 800 5 - 5 - 5 nt5cb 256 m 4 cn - ad 400 ddr3 - 800 6 - 6 - 6 nt5cb256 m 4cn - be 533 ddr3 - 1066 7 - 7 - 7 nt5cb256 m 4cn - bf 533 ddr3 - 1066 8 - 8 - 8 nt5cb256 m 4cn - cf 667 ddr3 - 1333 8 - 8 - 8 nt5cb256 m 4cn - cg 667 ddr3 - 1333 9 - 9 - 9 nt5cb256 m 4cn - dg 80 0 ddr3 - 1600 9 - 9 - 9 nt5cb256 m 4cn - dh 800 ddr3 - 1600 10 - 10 - 10 128m x 8 nt5cb128m8cn - ac 78 - ball w bga 0.8mmx0.8mm pitch 400 ddr3 - 800 5 - 5 - 5 nt5cb128m8cn - ad 400 ddr3 - 800 6 - 6 - 6 nt5cb128m 8c n - be 533 ddr3 - 1066 7 - 7 - 7 nt5cb128m 8c n - bf 533 ddr3 - 1066 8 - 8 - 8 nt 5cb128m 8c n - cf 667 ddr3 - 1333 8 - 8 - 8 nt5cb128m 8c n - cg 667 ddr3 - 1333 9 - 9 - 9 nt5cb128m 8c n - dg 800 ddr3 - 1600 9 - 9 - 9 nt5cb128m 8c n - dh 800 ddr3 - 1600 10 - 10 - 10 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 7 re v 1.0 12 / 200 9 simplified state diagram p o w e r o n p o w e r a p p l i e d r e s e t p r o c e d u r e f r o m a n y s t a t e r e s e t i n i t i a l i z a t i o n z q c a l i b r a t i o n i d l e m r s , m p r , w r i t e l e v e l i z i n g s e l f r e f r e s h r e f r e s h i n g s r e s r x r e f a c t i v a t i n g a c t p r e c h a r g e p o w e r d o w n p d e p d x a c t i v e p o w e r d o w n b a n k a c t i v e w r i t i n g w r i t i n g p r e c h a r g i n g r e a d i n g w r i t e w r i t e a r e a d a w r i t e r e a d w r i t e a r e a d a w r i t e r e a d p r e , p r e a p r e , p r e a w r i t e a r e a d a p r e , p r e a p d x p d e r e a d i n g r e a d a u t o m a t i c s e q u e n c e c o m m a n d s e q u e n c e m r s z q c l z q c l z q c s abbreviation function abbreviation function abbreviation function act active read rd, rds4, rds8 ped enter power-down pre precharge read a rda, rdas4, rdas8 pdx exit power-down prea precharge all write wr, wrs4, wrs8 sre self-refresh entry mrs mode register set write a wra, wras4, wras8 srx self-refresh exit ref refresh ????? start reset procedure mpr multi-purpose register zqcl zq calibration long zqcs zq calibration short - - 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 8 re v 1.0 12 / 200 9 basic functional ity the ddr3 sdram is a high - speed dynamic random access memory internally configured as an eight - bank dram. the ddr3 sdram uses a n 8n prefetch architecture to achieve high speed operation. the 8n prefetch architecture is combined with an interface designe d to transfer two data words per clock cycle at the i/o pins. a single read or write operation for the ddr3 sdram consists of a single 8n - bit wide, four clock data transfer at the internal dram core and two corresponding n - bit wide, one - half clock cycle da ta transfers at the i/o pins. read and write operation to the ddr3 sdram are burst oriented, start at a selected location, and continue for a burst length of eight or a ?chopped? burst of four in a programmed sequence. operation begins with the registratio n of an active command, which is then followed by a read or write command. the address bits registered coincident with the active command are used to select the bank and row to be activated (ba0 - ba2 select the bank; a0 - a13 select the row). the address bit registered coinci dent with the read or write command are used to select the starting column location for the burst operation, determine if the auto precharge command is to be issued (via a10), and select bc4 or bc8 mode ?on the fly? (via a12) if enabled i n the mode register. prior to normal operation, the ddr3 sdram must be powered up and initialized in a predefined manner. the following sections provide detailed information covering device reset and initialization, register definition, command description s and device oper ation. dram initialization and reset power - up initialization sequence the following sequence is required for power up and initialization 1. apply power ( ????? is recommended to be maintained below 0.2 x vdd, all other inputs may be undefined). ????? needs to be maintained for minimum 200us with stable power. cke is pulled low anytime before ????? being de - asserted (min. time 10ns). the power voltage ramp time between 300mv to vddmin must be no greater than 200ms; and during the ramp, vdd>vddq and (vdd - vddq ) < 0.3 volts. - vdd and vddq are driven from a single power converter output, and - the voltage levels on all pins other than vdd, vddq, vss, vssq must be less than or equal to vddq and vdd on one side and must be larger than or equal to vssq and vss on the other side. in addition, vtt is limited to 0.95v max once power ramp is finished, and - vref tracks vddq/2. or - apply vdd without any slope reversal before or at the same time as vddq. - apply vddq without any slope reversal before or at the same time as vtt & vref. - the voltage levels on all pins other than vdd, vddq, vss, vssq must be less than or equal to vddq and vdd on one side and must be large r than or equal to vssq and vss on the other side. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 9 re v 1.0 12 / 200 9 2. after ????? is de - asserted, wait for another 500us until cke become active. during this time, the dram will start inter nal state initialization; this will be done independently of external clocks. 3. clock (ck, ?? ) need to be started and stabilized for at least 10ns or 5tck (which is larger) before cke goes active. since cke is a synchronous signal, the corresponding set up time to clock (tis) must be meeting . also a nop or deselect command must be registered (with tis set up time to clock) before cke goes activ e. once the cke registered high after reset , cke needs to be continuously registered high until the initialization sequence is finished, including expi ration of tdllk and tzqinit. 4. the ddr3 dram will keep its on - die termination in high impedance sta te as long as ????? is asserted. further, the dram keeps its on - die termination in high impedance state after ????? de - assertion until cke is registered high. the odt input signal may be in undefined state until tis before cke is registered high. when cke is registered high, the odt input signal may be statically held at either low or high. if rtt_nom is to be enabled in mr1, the odt input signal must be statically held low. in all cases, the odt input signal remains static until the power up initialization sequence is finished, including the expiration of tdllk and tzqinit. 5. after cke being registered high, wait minimum of reset cke exit time, txpr, before issuing the first mrs command to load mode register. [txpr=max(txs, 5tck)] 6. issue mrs c ommand to l oad mr2 with all application settings. (to issue mrs command for mr2, provide low to ba0 and ba2, high to ba1) 7. issue mrs c ommand to load mr3 with all application settings. (to issue mrs command for mr3, provide low to ba2, high to ba0 and ba1) 8 . issue mrs command to load mr1 with all application settings and dll enabled. (to issue dll enable command, pro vide low to a0, high to ba0 and low to ba1 and ba2) 9. issue mrs command to load mr0 with all application settings and dll reset. (to issue dll reset command, provide high to a8 and low to ba0 - ba2) 10. issue zqcl command to starting zq calibration. 11. wait for both tdllk and tzqinit completed. 12. the ddr3 sdram is now ready for normal operation. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 10 re v 1.0 12 / 200 9 d dr3 reset and initialization seq uence at power - on ramping d dr3 reset procedure at power stable condition the following sequence is required for reset at no power interruption initialization. 1. asserted reset below 0.2*vdd anytime when reset is needed (all ot her inputs may be undefined). reset needs to be maintained for minimum 100ns. cke is pulled low before reset being de - asserted (min. time 10ns). 2. follow power - up initialization sequence step 2 to 11. 3. the reset sequence is now completed . ddr3 sdram is ready for normal operation. c k c k t c k s r x r e s e t c k e t i s o d t c o m m a n d b a 0 - b a 2 t = 2 0 0 u s t = 5 0 0 u s t x p r t m r d t m r d t m r d t m o d t z q i n i t . d o n o t c a r e t i m e b r e a k 1 0 n s m r s m r s m r s m r s z q c l m r 2 m r 3 m r 1 m r 0 v d d , v d d q * f r o m t i m e p o i n t t d u n t i l t k . n o p o r d e s c o m m a n d s m u s t b e a p p l i e d b e t w e e n m r s a n d z q c a l c o m m n a d s . t e t k n o p * n o p * v a l i d v a l i d s t a t i c l o w i n c a s e r t t _ n o m i s e n a b l e d a t t i m e t g , o t h e r w i s e s t a t i c h i g h o r l o w t d t c t a t b t f t g t h t i t j t d l l k v a l i d v a l i d c k c k t c k s r x r e s e t c k e t i s o d t c o m m a n d b a 0 - b a 2 t = 1 0 0 n s t = 5 0 0 u s t x p r t m r d t m r d t m r d t m o d t z q i n i t . d o n o t c a r e t i m e b r e a k 1 0 n s m r s m r s m r s m r s z q c l m r 2 m r 3 m r 1 m r 0 v d d , v d d q * f r o m t i m e p o i n t t d u n t i l t k . n o p o r d e s c o m m a n d s m u s t b e a p p l i e d b e t w e e n m r s a n d z q c a l c o m m n a d s . t e t k n o p * n o p * v a l i d v a l i d s t a t i c l o w i n c a s e r t t _ n o m i s e n a b l e d a t t i m e t g , o t h e r w i s e s t a t i c h i g h o r l o w t d t c t a t b t f t g t h t i t j t d l l k v a l i d v a l i d 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 11 re v 1.0 12 / 200 9 register definition programming the mode registers for application flexibility, various functions, features, and modes are programmable in four mode registers, provided by the ddr3 sdram, as user defined variables and they must be programmed via a mode register set (mrs) command. as the default values of the mode registers (mr#) are not defined, contents of mode registers must be fully initialized and/or re - initial ized, i.e. written, after po wer up and/or reset for proper operation. also the contents of the mode registers can be altered by re - executing the mrs command during normal operation. when programming the mode registers, even if the user chooses to modify only a sub - set of the mrs fiel ds, all address fields within the accessed mode register must be redefined when the mrs command is issued. mrs command and dll reset do not affect array contents, which means these commands can be exe cuted any time after power - up without affecting the arr ay contents the mode register set command cycle time, tmrd is required to complete the write operation to the mode register and is the minimum time required between two mrs commands shown as below. the mrs command to non - mrs co mmand delay, tmod, is require for the dram to update the features except dll reset, and is the minimum time required from an mrs command to a non - mrs command excluding nop and des shown as the following figure. c k c k c k e d o n o t c a r e t i m e b r e a k m r s n o p n o p n o p n o p c m d v a l v a l a d d r t m r d m r s c k c k c k e m r s n o p n o p n o p n o p c m d a d d r t m o d n o n m r s v a l o l d s e t t i n g u p d a t i n g s e t t i n g n e w s e t t i n g v a l v a l 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 12 re v 1.0 12 / 200 9 the mode regist er contents can be changed using the same command and timing requirements during normal operation as long as the dram is in idle state, i.e. all banks are in the precharged state with trp satisfied, all data bursts are complet ed and cke is high prior to wr iting into the mode register. the mode registers are divided into various fields depending on the function ality and/or modes. the mode - register mr0 stores data for controlling various operating modes of ddr3 sdram. it controls burst length, read burst typ e, cas latency, test mode, dll reset, wr, and dll control for precharge power - down, which include various vendor specific options to make ddr3 sdram useful for various applications. the mode register is written by asserting low on ?? , ??? , ??? , ?? , ba0, ba1, and ba2, while controlling the states of address pins according to the following figure. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 13 re v 1.0 12 / 200 9 mr0 definition a 0 a 1 a 2 a 3 a 4 a 5 a 6 a 7 a 8 a 9 a 1 0 a 1 1 a 1 2 a 1 3 b a 0 b a 1 b a 2 a d d r e s s f i l e d b l a 0 a 1 8 ( f i x e d ) 0 0 b c 4 o r 8 ( o n t h e f l y ) 1 0 b u r s t l e n g t h b u r s t t y p e a 3 n i b b l e s e q u e n t i a l 0 i n t e r l e a v e 1 b u r s t t y p e m r s m o d e b a 0 b a 1 m r 0 0 0 1 0 m r s m o d e 0 1 1 1 d l l c o n t r o l f o r p r e c h a r g e p d a 1 2 s l o w e x i t ( l o w p o w e r ) 0 f a s t e x i t ( n o r m a l ) 1 p r e c h a r g e p o w e r d o w n * * w r ( c y c l e s ) a 9 a 1 0 a 1 1 1 6 0 0 0 5 1 0 0 w r i t e r e c o v e r y f o r a u t o p r e c h a r g e * * 0 1 0 1 1 0 0 0 1 1 0 1 0 1 1 1 1 1 d l l r e s e t a 8 n o 0 y e s 1 d l l r e s e t m o d e a 7 n o r m a l 0 t e s t 1 m o d e * b a 2 a n d a 1 3 a r e r e s e r v e d f o r f u t u r e u s e a n d m u s t b e s e t t o 0 w h e n p r o g r a m m i n g t h e m r . * * w r ( w r i t e r e c o v e r y f o r a u t o p r e c h a r g e ) m i n i n c l o c k c y c l e s i s c a l c u l a t e d b y d i v i d i n g t w r ( n s ) b y t c k ( n s ) a n d r o u n d i n g u p t o t h e n e x t i n t e g e r : w r m i n [ c y c l e s ] = r o u n d u p ( t w r / t c k ) . t h e v a l u e i n t h e m o d e r e g i s t e r m u s t b e p r o g r a m m e d t o b e e q u a l o r l a r g e r t h a n w r m i n . t h e p r o g r a m m e d w r v a l u e i s u s e d w i t h t r p t o d e t e r m i n e t d a l . c a s l a t e n c y a 2 a 4 a 5 0 0 0 5 0 c a s l a t e n c y 0 1 1 1 b c 4 ( f i x e d ) r e s e r v e d r e s e r v e d a 6 0 0 1 0 0 1 0 0 0 1 1 0 1 0 0 0 1 0 1 0 1 1 0 0 1 1 1 0 6 7 8 9 1 0 r e s e r v e d 6 7 8 1 0 1 2 1 4 m r 1 m r 2 m r 3 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 14 re v 1.0 12 / 200 9 burst length, type, and order accesses within a given burst may be programmed to sequential or interleaved order. the burst type is selected via bit a3 as shown in the mr0 definition as above figure. the ordering of access within a burst is determined by the burst length, burst type, and the starting column address. the burst length is defined by bits a0 - a1. burst length options include fix bc4, fixed bl8, and on the fly which allow bc4 or bl8 to be selected coincident with the registration of a read or write command via a12 / ?? . burst type and burst order burst length read/ write starting column address (a2,a1,a0) burst type = sequential (decimal) a3 = 0 burst type = interleaved (decimal) a3 = 1 note 000 0,1,2,3,t,t,t,t 0,1,2,3,t,t,t,t 001 1,2,3,0,t,t,t,t 1,0,3,2,t,t,t,t 010 2,3,0,1,t,t,t,t 2,3,0,1,t,t,t,t 011 3,0,1,2,t,t,t,t 3,2,1,0,t,t,t,t 100 4,5,6,7,t,t,t,t 4,5,6,7,t,t,t,t 101 5,6,7,4,t,t,t,t 5,4,7,6,t,t,t,t 110 6,7,4,5,t,t,t,t 6,7,4,5,t,t,t,t 111 7,4,5,6,t,t,t,t 7,6,5,4,t,t,t,t 0,v,v 0,1,2,3,x,x,x,x 0,1,2,3,x,x,x,x 1,v,v 4,5,6,7,x,x,x,x 4,5,6,7,x,x,x,x 0 0,1,2,3,4,5,6,7 0,1,2,3,4,5,6,7 1 1,2,3,0,5,6,7,4 1,0,3,2,5,4,7,6 10 2,3,0,1,6,7,4,5 2,3,0,1,6,7,4,5 11 3,0,1,2,7,4,5,6 3,2,1,0,7,6,5,4 100 4,5,6,7,0,1,2,3 4,5,6,7,0,1,2,3 101 5,6,7,4,1,2,3,0 5,4,7,6,1,0,3,2 110 6,7,4,5,2,3,0,1 6,7,4,5,2,3,0,1 111 7,4,5,6,3,0,1,2 7,6,5,4,3,2,1,0 write v,v,v 0,1,2,3,4,5,6,7 0,1,2,3,4,5,6,7 2,4 note: 1. in case of burst length being fixed to 4 by mr0 setting, the internal write operation starts two clock cycles earlier than the bl8 mode. this means that the starting point for twr and twtr will be pulled in by two clocks. in case of burst length being selected on-th-fly via a12/ ?? , the internal write operation starts at the same point in time like a burst of 8 write operation. this means that during on-the-fly control, the starting point for twr and twtr will not be pulled in by two clocks. 2. 0~7 bit number is value of ca[2:0] that causes this bit to be the first read during a burst. 3. t: output driver for data and strobes are in high impedance. 4. v: a valid logic level (0 or 1), but respective buffer input ignores level on input pins. 5. x: do not care. write read 4 chop 1,2,3 1,2,4,5 read 2 8 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 15 re v 1.0 12 / 200 9 cas latency the cas latency is defined by mr0 (bit a9~a11) as shown in the mr0 definition figure. cas latency is the delay, in clock cycles, between the internal read command and the availability o f the first bit of output data. ddr3 sdram does not support any half clock latencies. the overall read latency (rl) is defined as additive latency (al) + cas latency (cl); rl = al + cl. test mode the normal operating mode is selected by mr0 (bit7=0) and a ll other bits set to the desired values shown in the mr0 definition figure. programming bit a7 to a ?1? places the ddr3 sdram into a test mode that is only used by the dram manufacturer and should not be used. no operations or functionality is guaranteed i f a7=1. dll reset the dll reset bit is self - clearing, meaning it returns back to the value of ?0? after the dll reset function has been issued. once the dll is enabled, a subsequent dll reset should be applied. anytime the dll reset function is used, tdllk must be met before any functions that require the dll can be used. (i.e. read commands or odt synchronous operations) write recovery the programmed wr value mr0(bits a9, a10, and a11) is used for the auto precharge feature along with trp to determine tdal wr (write recovery for auto - precharge)min in clock cycles is calculated by dividing twr(ns) by tck(ns) and rounding up to the next integer: wrmin[cycles] = roundup(twr[ns]/tck[ns]). the wr must be programmed to be equal or larger than twr(min). precharge pd dll mr0 (bit a12) is used to select the dll usage during precharge power - down mode. when mr0 (a12=0), or ?slow - exit?, the dll is frozen after entering precharge power - down (for potential power savings) and upon exit requires txpdll to be met prior to th e next valid command. when mr0 (a12=1), or ?fast - exit?, the dll is maintained after entering precharge power - down and upon exiting power - down requires txp to be met prior to the next valid command. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 16 re v 1.0 12 / 200 9 mode register mr1 the mode register mr1 stores the data f or enabling or disabling the dll, output strength, rtt_nom impedance, additive latency, w rite leveling enable and qoff. the mode register 1 is written by asserting low on ?? , ??? , ??? , ?? high on ba0 and low on ba1 and ba2, while controlling the states of address pins according to the following figure. a 0 a 1 a 2 a 3 a 4 a 5 a 6 a 7 a 8 a 9 a 1 0 a 1 1 a 1 2 a 1 3 b a 0 b a 1 b a 2 a d d r e s s f i l e d d l l e n a b l e a 0 e n a b l e 0 d i s a b l e 1 d l l o u t p u t d r i v e r i m p e d a n c e c o n t r o l m r b a 0 b a 1 m r 0 0 0 m r 1 1 0 m o d e r e g i s t e r 0 1 1 1 m r 3 m r 2 q o f f * * * b a 2 , a 5 , a 8 , a 1 0 , a n d a 1 3 a r e r e s e r v e d f o r f u t u r e u s e a n d m u s t b e s e t t o 0 w h e n p r o g r a m m i n g t h e m r . * * o u t p u t s d i s a b l e d C d q s , d q s s , d q s s . * * * i n w r i t e l e v e l i n g m o d e ( m r 1 [ b i t 7 ] = 1 ) w i t h m r 1 [ b i t 1 2 ] = 1 , a l l r t t _ n o m s e t t i n g s a r e a l l o w e d ; i n w r i t e l e v e l i n g m o d e ( m r 1 [ b i t 7 ] = 1 ) w i t h m r 1 [ b i t 1 2 ] = 0 , o n l y r t t _ n o m s e t t i n g o f r z q / 2 , r z q / 4 , a n d r z q / 6 a r e a l l o w e d . * * * * i f r t t _ n o m i s u s e d d u r i n g w r i t e s , o n l y t h e v a l u e s r z q / 2 , r z q / 4 , r z q / 6 a r e a l l o w e d . q o f f a 1 2 o u t p u t b u f f e r e n a b l e d 0 o u t p u t b u f f e r d i s a b l e d 1 a l a 3 a 4 0 ( a l d i s a b l e ) 0 0 c l - 1 1 0 a d d i t i v e l a t e n c y 0 1 1 1 r t t _ n o m a 2 a 6 a 9 o d t d i s a b l e 0 0 0 1 0 0 0 1 0 1 1 0 0 0 1 1 0 1 0 1 1 1 1 1 o d t v a l u e r z q / 4 r z q / 2 r z q / 6 r z q / 1 2 r z q / 8 r e s e r v e d r e s e r v e d * c l - 2 r e s e r v e d * * w r i t e l e v e l i z a t i o n w r i t e l e v e l i n g e n a b l e a 7 d i s a b l e d 0 e n a b l e d 1 t d q s t d q s e n a b l e a 1 1 d i s a b l e d 0 e n a b l e d 1 d . i . c . a 1 a 5 r e s e r v e d f o r r z q / 6 0 0 r z q / 7 1 0 0 1 1 1 r z q / t b d r z q / t b d * * * * * n o t e : r z q = 2 4 0 o h m s * * * * * * * * 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 17 re v 1.0 12 / 200 9 dll enable/disable the dll must be enabled for normal operation. dll enable is required durin g power up initialization, and upon returning to nor mal operation after having the dll disabled. during normal operation (dll - on) with mr1 (a0=0), the dll is automatically dis abled when entering self - refresh operation and is automatically re - enable upon exit of self - refresh operation. any time the dll is enabled and subsequently reset, tdllk clock cycles must occur before a read or synchronous odt command can be issued to allow time for the internal clock to be synchronized with the external clock. failin g to wait for synchronization to occur may result in a violation of the tdqsck, taon, or taof parameters. during tdllk, cke must continuously be registered high. ddr3 sdram does not require dll for any write operation, expect when rtt_wr is enabled and the dll is required for proper odt operation. for more detailed information on dll disable operation in dll - off mode. the direct odt feature is not supported during dll - off mode. the on - die termination resistors must be disabled by continu - ously registering t he odt pin low and/or by programming the rtt_nom bits mr1{a9,a6,a2} to {0,0,0} via a mode register set command during dll - off mode. the dynamic odt feature is not supported at dll - off mode. user must use mrs command to set rtt_wr, mr2{a10,a9}={0,0}, to dis able dynamic odt externally. output driver impedance control the output driver impedance of the ddr3 sdram device is selected by mr1(bit a1 and a5) as shown in mr1 definition figure. odt rtt values ddr3 sdram is capable of providing two different terminati on values (rtt_nom and rtt_wr). the nominal termination value rtt_nom is programmable in mr1. a separate value (rtt_wr) may be programmable in mr2 to enable a unique rtt value when odt is enabled during writes. the rtt_wr value can be applied during writes even when rtt_nom is disabled. additive latency (al) additive latency (al) operation is supported to make command and data bus efficient for sustainable bandwidth in ddr3 sdram. in this operation, the ddr3 sdram allows a read or write command (either wit h or without auto - precharge) to be issued immediately after the active command. the command is held for the time of the additive latency (al) before it is issued inside the device. the read latency (rl) is controlled by the sum of the al and cas latency (c l) register settings. write latency (wl) is controlled by the sum of the al and cas write latency (cwl) register settings. a summary of the al register options are shown as the following table. additive latency (al) settings a4 a3 al 0 0 0 (al disable) 0 1 cl - 1 1 0 cl - 2 1 1 reserved 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 18 re v 1.0 12 / 200 9 write leveling for better signal integrity, ddr3 memory module adopted fly by topology for the commands, addresses, control signals, and clocks. the fly by topology has benefits from reducing number of stubs and their le ngth but in other aspect, causes flight time skew between clock and strobe at every dram on dimm. it makes difficult for the controller to maintain tdqss, tdss, and tdsh specification. therefore, the controller should support ?write leveling? in ddr3 sdram to compensate for skew. output disable the ddr3 sdram outputs maybe enable/disabled by mr1 (bit12) as shown in mr1 definition. when this feature is enabled (a12=1) all output pins (dqs, dqs , ??? , etc.) are disconnected from the device removing any loading of the output drivers. this feature may be useful when measuring modules power for example. for normal operation a12 should be set to ?0?. tdqs, ???? tdqs (termination data strobe) is a feature of x8 ddr3 sdram that provides additional termination resista nce outputs that may be useful in some system configurations. tdqs is not supported in x4 configurations. when enabled via the mode register, the same termination resistance function is applied to be tdqs/ ???? pins that are applied to the dqs / ??? pins. in contrast to the rdqs function of ddr2 sdram, tdqs provides the termination resistance function only. the data strobe function of rdqs is not provided by tdqs. the tdqs and dm functions share the same pin. when the tdqs function is enabled via the mode regi ster, the dm function is not supported. when the tdqs function is disabled, the dm function is provided and the ???? pin is not used. the tdqs function is available in x8 ddr3 sdram only and must be disabled via the mode register a11=0 in mr1 for x4 configurations. tdqs, ???? mr1 (a11) dm / tdqs nu / tdqs 0 (tdqs disabled) dm hi - z 1 (tdqs enabled) tdqs tdqs note: 1. if tdqs is enabled, the dm function is disabled. 2. when not used, tdqs function can be disabled to save termination power. 3. tdqs function is only available for x8 dram and must be disabled for x4 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 19 re v 1.0 12 / 200 9 mode register mr2 the mo de register mr2 stores the data for controlling refresh related features, rtt_wr impedance, and cas write latency. the mode register 2 is written by asserting low on ?? , ??? , ??? , ?? high on ba1 and low on ba0 and ba2, while controlling the states of addre ss pins according to the table below. a 0 a 1 a 2 a 3 a 4 a 5 a 6 a 7 a 8 a 9 a 10 a 11 a 12 a 13 ba 0 ba 1 ba 2 address filed mrs mode ba 0 ba 1 mr 0 0 0 1 0 mrs mode 0 1 1 1 * * ba 2 , a 5 , a 8 , a 13 are reserved for future use and must be set to 0 when programming the mr . ** the rtt _ wr value can be applied during writes even when rtt _ nom is disabled . during write leveling , dynamic odt is not available . mr 1 mr 2 mr 3 cas write latency a 3 a 4 0 0 6 ( 2 . 5 ns > tck ( avg ) > = 1 . 875 ns ) 0 cas write latency 5 ( tck ( avg ) > = 2 . 5 ns ) a 5 0 0 1 0 1 0 0 1 1 1 0 0 1 0 1 1 1 0 1 1 1 7 ( 1 . 875 ns > tck ( avg ) > = 1 . 5 ns ) 8 ( 1 . 5 ns > tck ( avg ) > = 1 . 25 ns ) reserved reserved reserved reserved pasr a 0 a 1 0 0 half array ( 000 , 001 , 010 , 011 ) 0 pasr full array a 2 0 0 1 0 1 0 0 1 1 1 0 0 1 0 1 1 1 0 1 1 1 quarter array ( 000 , 001 ) 1 / 8 th array ( 000 ) 3 / 4 array ( 010 , 011 , 100 , 101 , 110 , 111 ) half array ( 100 , 101 , 110 , 111 ) quarter array ( 110 , 111 ) 1 / 8 th array ( 111 ) asr a 6 manual self refresh reference 0 asr enable 1 auto self refresh srt a 7 normal operating temperature range 0 extended operating temperature range 1 self - refresh temperature range a 9 a 10 dynamic odt off ( write does not affect rtt value ) 0 0 1 0 0 1 1 1 rzq / 4 reserved rtt _ wr ** rtt _ wr rzq / 2 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 20 re v 1.0 12 / 200 9 cas write latency (cwl) the cas write latency is defined by mr2 (bits a3 - a5) shown in mr2. cas write latency is the delay, in clock cycles, between the internal write command and the avail ability of the first bit of input data. ddr3 dram does not support any half clock laten cies. the overall write latency (wl) is defined as additive latency (al) + cas write latency (cwl); wl=al+cwl. auto self - refresh (asr) and self - refresh temperature (s rt) ddr3 sdram must support self - refresh operation at all supported temperatures. applications requiring self - refresh opera tion in the extended temperature range must use the asr function or program the srt bit appropriately. dynamic odt (rtt_wr) ddr3 sd ram introduces a new feature dynamic odt. in certain application cases and to further enhance signal integrity on the data bus, it is desirable that the termination strength of the ddr3 sdram can be changed without issuing an mrs com mand. mr2 register l ocations a9 and a10 configure the dynamic odt settings. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 21 re v 1.0 12 / 200 9 mode register mr3 the m ode register mr3 controls multi - purpose registers. the mode register 3 is written by asserting low on ?? , ??? , ??? , ?? high on ba1 and ba0, and low on ba2 while controlling the states of address pins according to the table below. multi - purpose register (mpr) the multi purpose register (mpr) function is used to read out a predefined system timing calibration bit sequence. to enable the mpr, a mode reg ister set (mrs) command must be issued to mr3 register with bit a2=1. prior to issuing the mrs com mand, all banks must be in the idle state (all banks precharged and trp met). once the mpr is enabled, any subsequent rd or rda commands will be redirected t o the multi purpose register. when the mpr is enabled, only rd or rda commands are allowed until a subsequent mrs command is issued with the mpr disabled (mr3 bit a2=0). power down mode, self - refresh and any other non - rd/rda command is not allowed during m pr enable mode. the reset function is supported during mpr enable mode. a 0 a 1 a 2 a 3 a 4 a 5 a 6 a 7 a 8 a 9 a 10 a 11 a 12 a 13 ba 0 ba 1 ba 2 address filed mrs mode ba 0 ba 1 mr 0 0 0 1 0 mrs mode 0 1 1 1 note : ba 2 , a 3 - a 13 are reserved for future use and must be set to 0 when programming the mr . mr 1 mr 2 mr 3 mpr a 2 normal operation 0 dataflow from mpr 1 mpr mpr loc . a 0 a 1 0 0 rfu 0 mpr location predefined pattern 1 1 0 1 1 rfu thermal sensor readout 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 22 re v 1.0 12 / 200 9 ddr3 sdram command description and operation command truth table function abbreviation cke ?? ? ??? ? ??? ? ?? ? ??? ? ?? ? ? a13 a 15 a12 ?? a10 ap a0 - 9 a11 note previous cycle current cycle mode register set mrs h h l l l l ba op code refresh ref h h l l l h v v v v v self refresh entry sre h l l l l h v v v v v h x x x x x x x x self refresh exit srx l h l h h h v v v v v single bank precharge pre h h l l h l ba v v l v precharge all banks prea h h l l h l v v v h v bank activate act h h l l h h ba row address (ra) write (fixed bl8 or bc4) wr h h l h l l ba rfu v l ca write (bc4, on the fly) wrs4 h h l h l l ba rfu l l ca write (bl8, on the fly) wrs8 h h l h l l ba rfu h l ca write with auto precharge (fixed bl8 or bc4) wra h h l h l l ba rfu v h ca write with auto precharge (bc4, on the fly) wras4 h h l h l l ba rfu l h ca write with auto precharge (bl8, on the fly) wras8 h h l h l l ba rfu h h ca read (fixed bl8 or bc4) rd h h l h l h ba rfu v l ca read (bc4, on the fly rds4 h h l h l h ba rfu l l ca read (bl8, on the fly) rds8 h h l h l h ba rfu h l ca read with auto precharge (fixed bl8 or bc4) rda h h l h l h ba rfu v h ca read with auto precharge (bc4, on the fly) rdas4 h h l h l h ba rfu l h ca read with auto precharge (bl8, on the fly) rdas8 h h l h l h ba rfu h h ca no opera tion nop h h l h h h v v v v v device deselected des h h h x x x x x x x x power down entry pde h l l h h h v v v v v h x x x x x x x x power down exit pdx l h l h h h v v v v v h x x x x x x x x zq calibration long zqcl h h l h h l x x x h x zq calibration short zqcs h h l h h l x x x l x 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 23 re v 1.0 12 / 200 9 ddr3 sdram command description and operation command truth table (conti.) note1 . all ddr3 sdram commands are defined by states of ?? , ??? , ??? , ?? and cke at the rising edge of the cloc k. the msb of ba, ra and ca are device density and configuration dependant. note2 . ????? is low enable command which will be used only for asynchronous reset so must be maintained high during any function. note3 . bank addresses (ba) determine which bank i s to be operated upon. for (e)mrs ba selects an (extended) mode register. note4 . v means h or l (but a defined logic level) and x means either defined or undefined (like floating) logic level. note5 . burst reads or writes cannot be terminated or interrupted and fixed/on - the - fly bl will be defined by mrs. note6 . the powe r - down mode does not perform any refresh operation. note7 . the state of odt does not affect the states described in this table. the odt function is not available during self refre sh. note8 . self refresh exit is asynchronous. note9 . vref(both vrefdq and vrefca) must be maintained during self refresh operation. note10 . the no operation command should be used in cases when the ddr3 sdram is in an idle or wait state. the purpose of the no operation command (nop) is to prevent the ddr3 sdram from registering any unwanted commands between operations. a no operation command will not terminate a pervious operation that is still executing, such as a burst read or write cycle. note11 . the deselect command performs the same function as no operation command. note12 . refer to the cke truth table for more detail with cke transition. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 24 re v 1.0 12 / 200 9 cke truth table current state cke command (n) ??? , ??? , ?? , ?? action (n) notes previous cycle (n - 1) current cycle (n) power - down l l x maintain power - down l h deselect or nop power - down exit self - refresh l l x maintain self - refresh l h deselect or nop self - refresh exit bank(s) active h l deselect or nop active power - down entry reading h l d eselect or nop power - down entry writing h l deselect or nop power - down entry precharging h l deselect or nop power - down entry refreshing h l deselect or nop precharge power - down entry all banks idle h l deselect or nop precharge power - down entr y h l refresh self - refresh note 1 cke (n) is the logic state of cke at clock edge n; cke (n - 1) was the state of cke at the previous clock edge. note 2 current state is defined as the state of the ddr3 sdram immediately prior to clock edge n. note 3 command (n) is the command registered at clock edge n, and action (n) is a result of command (n), odt is not included here. note 4 all states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document. note 5 the state of odt does not affect the states described in this table. the odt function is not available during self - refresh. note 6 cke must be registered with the same value on tckemin consecutive positive clock edges. cke must remain at the valid input level the entire time it takes to achieve the tckemin clocks of registeration. thus, after any cke transition, cke may not transition from its valid level during the time period of tis + tckemin + tih. note 7 deselect and nop are defined in the command truth ta ble. note 8 on self - refresh exit deselect or nop commands must be issued on every clock edge occurring during the txs period. read or odt commands may be issued only after txsdll is satisfied. note 9 self - refresh modes can only be entered from the all bank s idle state. note 10 must be a legal command as defined in the command truth table. note 11 valid commands for power - down entry and exit are nop and deselect only. note 12 valid commands for self - refresh exit are nop and deselect only. note 13 self - refres h cannot be entered during read or write operations. note 14 the power - down does not perform any refresh operations. note 15x means don?t care (including floating around vref) in self - refresh and power - down. it also applies to address pins. note 16 vr ef (both vref_dq and vref_ca) must be maintained during self - refresh operation. note 17 if all banks are closed at the conclusion of the read, write or precharge command, then precharge power - down is entered, otherwise active power - down is entered. note 18 ?idle state? is defined as all banks are closed (trp, tdal, etc. satisfied), no data bursts are in progress, cke is high, and all timings from previous operations are satisfied (tmrd, tmod, trfc, tzqinit, tzqoper, tzqcs, etc.) as well as all self - refresh e xit and power - down exit parameters are satisfied (txs, txp, txpdll, etc). 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 25 re v 1.0 12 / 200 9 no operation (nop) command the no operation (nop) command is used to instruct the selected ddr3 sdram to perform a nop ( ?? low and ??? , ??? , and ?? high). this prevents unwanted comm ands from being registered during idle or wait states. operations already in progress are not affected. deselect command the deselect function ( ?? high) prevents new commands from being executed by the ddr3 sdram. the ddr3 sdram is effectively deselected. operations already in progress are not affected. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 26 re v 1.0 12 / 200 9 dll - off mode ddr3 dll - off mode is entered by setting mr1 bit a0 to 1; this will disable the dll for subsequent operations until a0 bit set back to 0. the mr1 a0 bit for dll control can be switched eith er during initialization or later. the dll - off mode operations listed below are an optional feature for ddr3. the maximum clock frequency for dll - off mode is specified by the parameter tckdll_off. there is no minimum frequency limit besides the need to sat isfy the refresh interval, trefi. due to latency counter and timing restrictions, only one value of cas latency (cl) in mr0 and cas write latency (cwl) in mr2 are supported. the dll - off mode is only required to support setting of both cl=6 and cwl=6. dll - o ff mode will affect the read data clock to data strobe relationship (tdqsck) but not the data strobe to data relationship (tdqsq, tqh). special attention is needed to line up read data to controller time domain. comparing with dll - on mode, where tdqsck sta rts from the rising clock edge (al+cl) cycles after the read command, the dll - off mode tdqsck starts (al+cl - 1) cycles after the read command. another difference is that tdqsck may not be small compared to tck (it might even be larger than tck) and the diff erence between tdqsckmin and tdqsckmax is significantly larger than in dll - on mode. the timing relations on dll - off mode read operation have shown at the following timing diagram (cl=6, bl=8) dll - off mode read timing operation note: the tdqsck is used h ere for dqs, dqs , and dq to have a simplified diagram; the dll_off shift will affect both timings in the same way and the skew between all dq, dqs, and ??? signals will still be tdqsq. ck ck t 0 t 1 t 2 t 3 t 4 t 5 t 6 t 7 t 8 t 9 read cmd bank , col b address din b din b + 1 din b + 2 din b + 3 din b + 4 din b + 5 din b + 6 din b + 7 dqsdiff _ dll _ on dq _ dll _ on dqsdiff _ dll _ off dq _ dll _ off dqsdiff _ dll _ off dq _ dll _ off rl = al + cl = 6 ( cl = 6 , al = 0 ) rl ( dll _ off ) = al +( cl - 1 ) = 5 tdqsckdll _ diff _ min tdqsckdll _ diff _ max din b din b + 1 din b + 2 din b + 3 din b + 4 din b + 5 din b + 6 din b + 7 din b din b + 1 din b + 2 din b + 3 din b + 4 din b + 5 din b + 6 din b + 7 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 27 re v 1.0 12 / 200 9 dll on/off switching procedure ddr3 dll - off mode is entered by setting mr1 bit a0 to 1; this will disable the dll for subsequent operation until a0 bit set back to 0. dll on to dll off procedure to switch from dll on to dll off requires te frequency to be changed during self - refresh outlined in the following proc e dure: 1. starting from idle state (all banks pre - charged, all timing fulfilled, and drams on - die termination resistors, rtt, must be in high impedance state before mrs to mr1 to disable the dll). 2. set mr1 bit a0 to 1 to disable the dll. 3. wait tmod. 4. enter se lf refresh mode; wait until (tcksre) satisfied. 5. change frequency, in guidance with input clock frequency change section. 6. wait until a stable clock is available for at least (tcksrx) at dram inputs. 7. starting with the self refresh exit command, cke must co ntinuously be registered high until all tmod timings from any mrs command are satisfied. in addition, if any odt features were enabled in the mode registers when self refresh mode was entered, the odt signal must continuously be registered low until all tm od timings from any mrs command are sat isfied. if both odt features were disabled in the mode registers when self refresh mode was entered, odt signal can be registered low or high. 8. wait txs, and then set mode registers with appropriate values (especially an update of cl, cwl, and wr may be necessary. a zqcl command may also be issued after txs). 9. wait for tmod, and then dram is ready for next command. dll switch sequence from dll - on to dll - off ck ck t 0 t 1 ta 0 ta 1 tb 0 tc 0 td 0 td 1 te 0 te 1 mrs 2 ) 1 ) cmd cke odt tmod tf 0 tcksre 4 ) tcksrx 5 ) txs tmod nop sre 3 ) nop srx 6 ) nop mrs 7 ) nop valid 8 ) tckesr valid 8 ) valid 8 ) time break do not care note: odt: static low in case rtt_nom and rtt_wr is enabled, otherwise static low or high 1) starting with idle state, rtt in hi-z state. 2) disable dll by setting mr1 bit a0 to 1. 3) enter sr. 4) change frequency. 5) clock must be stable at least tcksrx. 6) exit sr. 7) update mode registers with dll off parameters setting. 8) any valid command. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 28 re v 1.0 12 / 200 9 dll off to dll on proc edure to switch from dll off to dll on (with requires frequency change) during self - refresh: 1. starting from idle state (all banks pre - charged, all timings fulfilled and drams on - die termination resistors (rtt) must be in high impedance state before self - refresh mode is entered). 2. enter self refresh mode, wait until tcksre satisfied. 3. change frequency, in guidance with input clock frequency change section. 4. wait until a stable is available for at least (tcksrx) at dram inputs. 5. starting with the self refres h exit command, cke must continuously be registered high until tdllk timing from subse - quent dll reset command is satisfied. in addition, if any odt features were enabled in the mode registers when self refresh mode was entered. the odt signal must continu ously be registered low until tdllk timings from subsequent dll reset command is satisfied. if both odt features are disabled in the mode registers when self refresh mode was entered, odt signal can be registered low or high. 6. wait txs, then set mr1 bit a0 to 0 to enable the dll. 7. wait tmrd, then set mr0 bit a8 to 1 to start dll reset. 8. wait tmrd, then set mode registers with appropriate values (especially an update of cl, cwl, and wr may be necessary. after tmod satisfied from any proceeding mrs command, a zqcl command may also be issued during or after tdllk). 9. wait for tmod, then dram is ready for next command (remember to wait tdllk after dll reset before applying command requiring a locked dll!). in addition, wait also for tzqoper in case a zqcl command was issued. ck ck t 0 ta 0 ta 1 tb 0 tc 0 tc 1 td 0 te 0 tf 1 tg 0 1 ) cmd cke odt th 0 tcksre tcksrx 4 ) txs tmrd tdllk nop sre 2 ) srx 5 ) mrs 6 ) mrs 7 ) mrs 8 ) valid odtloff + 1 tck 3 ) tmrd valid tckesr time break do not care nop note: odt: static low in case rtt_nom and rtt_wr is enabled, otherwise static low or high 1) starting from idle state. 2) enter sr. 3) change frequency. 4) clock must be stable at least tcksrx. 5) exit sr. 6) set dll-on by mr1 a0="0" 7) start dll reset 8) any valid command 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 29 re v 1.0 12 / 200 9 input clock frequency change once the ddr3 sdram is initialized, the ddr3 sdram requires the clock to be stable during almost all states of normal operation. this means once the clock frequency has been set and is to be in the stable state, the clock period is not allowed to deviate except for what is allowed for by the clock jitter and ssc (spread spectrum clocking) specification. the input clock frequency can be changed from one stable clock rate to another s table clock rate under two conditions: (1) self - refresh mode and (2) precharge power - down mode. outside of these two modes, it is illegal to change the clock frequency. for the first condition, once the ddr3 sdram has been successfully placed in to self - re fresh mode and tcksre has been satisfied, the state of the clock becomes a don?t care. once a don?t care, changing the clock frequency is permissible, provided the new clock frequency is stable prior to tcksrx. when entering and exiting self - refresh mode o f the sole purpose of chang ing the clock frequency. the ddr3 sdram input clock frequency is allowed to change only within the minimum and maximum operating frequency specified for the particular speed grade. the second condition is when the ddr3 sdram is in precharge power - down mode (either fast exit mode or slow exit mode). if the rtt_nom feature was enabled in the mode register prior to entering precharge power down mode, the odt signal must continuously be registered low ensuring rtt is in an off state . if the rtt_nom feature was disabled in the mode register prior to engering precharge power down mode, rtt will remain in the off state. the odt signal can be registered either low or high in this case. a minimum of tcksre must occur after cke goes low be fore the clock frequency may change. the ddr3 sdram input clock frequency is allowed to change only within the minimum and maximum operating frequency specified for the particular speed grade. during the input clock frequency change, odt and cke must be he ld at stable low levels. once the input clock frequency is changed, stable new clocks must be provided to the dram tcksrx before precharge power down may be exited; after precharge power down is exited and txp has expired, the dll must be reset via mrs. de pending on the new clock frequency additional mrs commands may need to be issued to appropriately set the wr, cl, and cwl with cke continuously registered high. during dll re - lock period, odt must remain low and cke must remain high. after the dll lock tim e, the dram is ready to operate with new clock frequency. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 30 re v 1.0 12 / 200 9 change frequency during precharge power - down ck ck t 0 t 1 t 2 ta 0 tb 0 tc 0 tc 1 td 0 td 1 te 0 cke command dqs , dqs tch tcl tck te 1 tih tis tih tis tcksre tcke tcksrx tchb tclb tckb nop nop nop nop nop mrs nop valid dll reset valid tih tis address odt dq dm high - z high - z taofpd / taof tcpded txp tdllk previous clock frequency new clock frequency frequency change enter precharge power - down mode exit precharge power - down mode 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 31 re v 1.0 12 / 200 9 write leveling for better signal integrity, ddr3 memory adopted fly by topology for the commands, addresses, control signals, and clocks. the fly by topology has benefits from reducing number of stubs and their length but in other aspect, causes flight time skew between clock and strobe at every dram on dimm. it makes it difficult for the controller to maintain tdqss, tdss, and tdsh specification. the refore, the controller should support write leveling in ddr3 sdram to compensate the skew. the memory controller can use the write leveling feature and feedback from the ddr3 sdram to adjust the dqs - ??? to ck - ?? relationship. the memory controller involved in the leveling must have adjustable delay setting on dqs - ??? to align the rising edge of dqs - ??? with that of the clock at the dram pin. dram asynchronously feeds back ck - ? ? , sampled with the rising edge of dqs - ??? , through the dq bus. th e controller repeatedly delays dqs - ??? until a transition from 0 to 1 is detected. the dqs - ??? delay established though this exercise would ensure tdqss specification. besides tdqss, tdss, and tdsh specification also needs to be fulfilled. one way to a chieve this is to combine the actual tdqss in the application with an appropriate duty cycle and jitter on the dqs - ??? signals. depending on the actual tdqss in the application, the actual val ues for tdqsl and tdqsh may have to be better than the absolut e limits provided in ac timing parameters section in order to satisfy tdss and tdsh specification. a conceptual timing of this scheme is show as below figure. dqs/ ??? driven by the controller during leveling mode must be dete rmined by the dram based on ranks populated. similarly, the dq bus driven by the dram must also be terminated at the controller. one or more data bits should carry the leveling feedback to the controller across the dram configurations x4, and x8. therefore , a separate feedback mechanism should be able for each byte lane. the upper data bits should provide the feedback of the upper diff_dqs (diff_udqs) to clock relationship whereas the lower data bits would indicate the lower diff_dqs (di ff_ldqs) to clock re lationship. 0 or 1 0 0 diff _ ck diff _ dqs source diff _ ck diff _ dqs destination dq dq push dqs to capture 0 - 1 transition 0 or 1 1 1 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 32 re v 1.0 12 / 200 9 dram setting for write leveling and dram termination unction in that mode dram enters into write leveling mode if a7 in mr1 set high and after finishing leveling, dram exits from write leveling mode if a7 in mr1 set low. note that in wri te leveling mode, only dqs/ ??? terminations are activated and deactivated via odt pin not like normal operation. mr setting involved in the leveling procedure function mr1 enable disable write leveling enable a7 1 0 output buffer mode (qoff) a12 0 1 dram termination function in the leveling mode odt pin at dram dqs/dqs termination dqs termination de - asserted off off asserted on off note: in write leveling mode with its output buffer disabled (mr1[bit7]=1 with mr1[bit12]=1) all rtt_nom settings are allowed; in write leveling mo de with its output buffer enabled (mr1[bit7]=1 with mr1[bit12]=0) only rtt_nom settings of rzq/2, rzq/4, and rzq/6 are allowed. procedure description memory controller initiates leveling mode of all drams by setting bit 7 of mr1 to 1. with entering write l eveling mode, the dq pins are in undefined driving mode. during write leveling mode, only nop or deselect commands are allowed. as well as an mrs command to exit write leveling mode. since the controller levels one rank at a time, the output of other rank must be dis abled by setting mr1 bit a12 to 1. controller may assert odt after tmod, time at which dram is ready to accept the odt sig nal. controller may drive dqs low and ??? high after a delay of twldqsen, at which time dram has applied on - die termination on these signals. after tdqsl and twlmrd co ntroller provides a single dqs, ??? edge which is used by the dram to sample ck C ?? driven from controller. twlmrd(max) timing is controller dependent. dram samples ck - ?? ? status with rising edge of dqs and provides feedback on all the dq bits asynchronously after twlo timing. there is a dq output uncertainty of twloe defined to allow mismatch on dq bits; there are no read strob es (dqs/dqs) needed for these dqs. controller samples incoming dq and decides to increment or decrement dqs C ??? delay setting and launches the next dqs/ ??? pulse after some time, which is controller dependent. once a 0 to 1 transition is detected, the co n troller locks dqs C ??? delay setting and write leveling is achieved for the device. the following figure describes the timing dia gram and parameters for the overall write leveling procedure. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 33 re v 1.0 12 / 200 9 timing details of write l eveling sequence dqs - ??? ?? ?? write leveling mode exit the following sequence describes how write leveling mode should be exited: 1. after the last rising strobe edge (see ~t0), stop driving the strobe signals (s ee ~tc0). note: from now on, dq pins are in undefined d riving mode, and will remain undefined, until tmod after the respective mr command (te1). 2. drive odt pin low (tis must be satisfied) and keep it low (see tb0). 3. after the rtt is switched off, disable w rite level mode via mrs command (see tc2). 4. af ter tmod is satisfied (te1), any valid command may be registered. (mr commands may be issued after tmrd (td1). nop nop nop nop nop nop nop nop nop ck ck cmd odt di ff _ dqs prime dq late re ma ini ng dqs tmod twlmr d twlo twls t wlh twloe twls t wlh t wlo nop m rs tdqsh tdqsl tdqsh t dqsl t 1 t 2 time break do not care one pri me dq : earl y re ma ini ng dqs twlo t wlo undefined driving mode twloe twlo t wlo all dqs are prime : late re ma ini ng dqs earl y re ma ini ng dqs twlmrd twlo t wlo t wloe twldqsen nop note: 1. dram has the option to drive leveling feedback on a prime dq or all dqs. if feedback is driven only on one dq, the remaining dqs must be driven low as shown in above figure, and maintained at this state through out the leveling procedure. 2. mrs: load mr1 to enter write leveling mode 3. nop: nop or deselect 4. diff_dqs is the differential data strobe (dqs, ??? ). timing reference points are the zero crossings. dqs is shown with solid line, ??? is shown with dotted line. 6. dqs/ ??? needs to fulfill minimum pulse width requirements tdqsh(min) and tdqsl(min) as defined for regular writes; the max pulse width is system dependent. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 34 re v 1.0 12 / 200 9 timing detail of write leveling exit ck ck t 0 t 1 ta 0 tc 0 tc 1 tc 2 td 1 te 1 cmd ba tis tmod tmrd odt rtt _ dqs _ dqs dqs _ dqs result = 1 twlo dq rtt _ nom td 0 te 0 t 2 tb 0 taofmin taofmax transitioning time break do not care undefined driving mode nop nop nop nop nop nop nop mrs nop valid nop valid mr 1 valid valid todtloff 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 35 re v 1.0 12 / 200 9 extended temperature usage a. auto self - refresh support ed b. extended temperature range supported c. double refresh required for operation in the extended temperature range . mode register description field bits description asr mr2(a6) auto self - refresh (asr) when enabled, ddr3 sdram automatically provides sel f - refresh power management functions for all supported operating temperature values. if not enabled, the srt bit must be programmed to indicate toper during subsequent self - refresh operation. 0 = manual sr reference (srt) 1 = asr enable srt mr2(a7) self - r efresh temperature (srt) range if asr = 0, the srt bit must be programmed to indicate toper during subsequent self - refresh operation. if asr = 1, srt bit must be set to 0. 0 = normal operating temperature range 1 = extended operating temperature range aut o self - refresh mode - asr mode ddr3 sdram provides an auto - refresh mode (asr) for application ease. asr mode is enabled by setting mr2 bit a6=1 and mr2 bit a7=0. the dram will manage self - refresh entry in either the normal or extended temperature ranges. i n this mode, the dram will also manage self - refresh power consumption when the dram operating temperature changes, lower at low temperatures and higher at high temperatures. if the asr option is not supported by dram, mr2 bit a6 must set to 0. if the asr o ption is not enabled (mr2 bit a6=0), the srt bit (mr2 bit a7) must be manually programmed with the operating temperature range required during self - refresh operation. support of the asr option does not automatically imply support of the extended temperatur e range. self - refresh temperature range - srt srt applies to devices supporting extended temperature range only. if asr=0, the self - refresh temperature (srt) range bit must be programmed to guarantee proper self - refresh operation. if srt=0, then the dram will set an appropriate refresh rate for self - refresh operation in the normal temperature range. if srt=1, then the dram will set an appropriate, potentially different, refresh rate to allow self - refresh operation in either the normal or extended temperatu re ranges. the value of the srt bit can effect self - refresh power consumption, please refer to idd table for details. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 36 re v 1.0 12 / 200 9 self - refresh mode summary mr2 a[6] mr2 a[7] self - refresh operation allowed operating temperature range for self - refresh mode 0 0 sel f - refresh rate appropriate for the normal temperature range normal (0 ~ 85c) 0 1 self - refresh appropriate for either the normal or extended temperature ranges. the dram must support extended temperature range. the value of the srt bit can effect self - refr esh power consumption, please refer to the idd table for details. normal and extended (0 ~ 95c) 1 0 asr enabled (for devices supporting asr and normal temperature range). self - refresh power consumption is temperature dependent. normal (0 ~ 85c) 1 0 asr e nabled (for devices supporting asr and extended temperature range). self - refresh power consumption is temperature dependent. normal and extended (0 ~ 95c) 1 1 illegal mpr mr3 register definition mr3 a[2] mr3 a[1:0] function 0 don't care (0 or 1) normal operation, no mpr transaction. all subsequent reads will come from dram array. all subsequent writes will go to dram array. 1 see the following table enable mpr mode , subsequent rd/rda commands defined by mr3 a[1:0]. mpr functional description one bit wide logical interface via all dq pins during read operation. register read on x4: dq [0] drives information from mpr. dq [3:1] either drive the same information as dq [0], or they drive 0. register read on x8: dq [0] drives information from mpr. dq [7:1] either drive the same information as dq [0], or they drive 0. addressing during for multi purpose register reads for all mpr agents: ba [2:0]: don?t care. a [1:0]: a [1 :0] must be equal to 00. data read burst order in nibble is fixed. a[2]: for bl=8, a[2] must be equal to 0, burst order is fixed to [0,1,2,3,4,5,6,7]; for burst chop 4 cases, the burst order i s switched on nibble base, a[2]=0, burst order: 0,1,2,3, a[2]= 1, burst order: 4,5,6,7. *) a [9:3]: don?t care. a10/ap: don?t care. a12/bc: selects burst chop mode on - the - fly, if enabled within mr0 a11, a13: don?t care. regular interface functionality during register reads: 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 37 re v 1.0 12 / 200 9 support two burst ordering which are switche d with a2 and a[1:0]=00. support of read burst chop (mrs and on - the - fly via a12/bc). all other address bits (remaining column addresses bits including a10, all bank address bits) will be ignored by the ddr3 sdram. regular read latencies and ac timings appl y. dll must be locked prior to mpr reads. note *): burst order bit 0 is assigned to lsb and burst order bit 7 is assigned to msb of the selected mpr agent. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 38 re v 1.0 12 / 200 9 mpr register address definition the following table provide an overview of the available data locat ion, how they are addressed by mr3 a[1:0] during a mrs to mr3, and how their individual bits are mapped into the burst order bits during a multi purpose register read. mpr mr3 register definition mr3 a[2] mr3 a[1:0] function burst length read address a[2: 0] burst order and data pattern 1 00 read predefined pattern for system calibration bl8 000 burst order 0,1,2,3,4,5,6,7 pre - defined data pattern [0,1,0,1,0,1,0,1] bc4 000 burst order 0,1,2,3 pre - defined data pattern [0,1,0,1] bc4 100 burst order 4 ,5,6,7 pre - defined data pattern [0,1,0,1] 1 01 rfu bl8 000 burst order 0,1,2,3,4,5,6,7 bc4 000 burst order 0,1,2,3 bc4 100 burst order 4,5,6,7 1 10 rfu bl8 000 burst order 0,1,2,3,4,5,6,7 bc4 000 burst order 0,1,2,3 bc4 100 burst order 4, 5,6,7 1 11 rfu bl8 000 burst order 0,1,2,3,4,5,6,7 bc4 000 burst order 0,1,2,3 bc4 100 burst order 4,5,6,7 note: burst order bit 0 is assigned to lsb and the burst order bit 7 is assigned to msb of the selected mpr agent. active command the acti ve command is used to open (or activate) a row in a particular bank for subsequent access. the value on the ba0 - ba2 inputs selects the bank, and the address es provided on inputs a0 - a13 selects the row. these rows remain active (or open) for accesses until a precharge command is issued to that bank. a precharge command must be issued before opening a differ ent row in the same bank. precharge command the precharge command is used to deactivate the open row in a particular bank or the open row in all banks. t he bank(s) will be available for a subsequent row activation a specified time (trp) after the precharge command is issued, except in the case of concurrent auto precharge, where a read or write command to a different bank is allowed as long as it does not interrupt the data transfer in the current bank and does not violate any other timing parameters. once a bank has been pre charged, it is in the idle state and must be activated prior to any read or write commands being issued to that bank. a pre charge co mmand is allowed if there is no open row in that bank (idle bank) or if the previously open row is already in the process of precharging. however, the precharge period will be determined by the last precharge command issued to the bank. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 39 re v 1.0 12 / 200 9 read operation re ad burst operation during a read or write command ddr3 will support bc4 and bl8 on the fly using address a12 during the read or write (auto precharge can be enabled or disabled). a12=0, bc4 (bc4 = burst chop, tccd=4) a12=1, bl8 a12 will be used only for bu rst length control, not a column address. read burst operation rl=5 (al=0, cl=5, bl=8) read burst operation rl = 9 (al=4, cl=5, bl=8) read timing definitions read timing is shown in the following figure and is applied when the dll is enabled and locked . rising data strobe edge parameters: tdqsck min/max describes the allowed range for a rising data strobe edge relative to ck, ck. tdqsck is the actual position of a rising strobe edge relative to ck, ck. tqsh describes the dqs, ??? differential output high time. tdqsq describes the latest valid transition of the associated dq pins. tqh describes the earliest invalide transition of the associated dq pins. fal ling data strobe edge parameters: tqsl describes the dqs, ??? differenti al output low time. tdqsq describes the latest valid transition of the associated dq pins. tqh describes the earliest invalid transition of the associated dq pins. ck ck t 0 t 1 t 3 t 5 t 6 t 7 t 9 t 145 cl = 5 dqs , dqs t 2 t 4 t 8 t 10 read nop cmd nop nop nop nop nop nop nop nop nop nop bank col n address dout n dout n + 1 dout n + 2 dout n + 3 dout n + 4 dout n + 5 dout n + 6 dout n + 7 dq rl = al + cl trpre trpst ck ck t 0 t 1 t 3 t 5 t 6 t 7 t 9 t 145 cl = 5 dqs , dqs t 2 t 4 t 8 t 10 read nop cmd nop nop nop nop nop nop nop nop nop nop bank col n address dout n dout n + 1 dout n + 2 dout n + 3 dout n + 4 dout n + 5 dq rl = al + cl trpre al = 4 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 40 re v 1.0 12 / 200 9 read timing definition read timing; clock to data strobe relationship clock to data strobe relationship is shown in the following figure and is applied when the dll is enabled and locked. rising data strobe edge parameters: tdqsck min/max describes the allowed range for a rising data strobe edge relative to ck and ?? . tdqsck is the actual position of a rising strobe edge relative to ck and ?? . tqsh describes the data strobe high pulse width. falling data strobe edge parameters: tdsl describes the data strobe low pulse width. clock to data strobe relationship rising strobe region tdqsk , min tdqsk , max tdqsk ck ck dqs dqs tdqsk rising strobe region tqsh tqsl tqh tqh tdqsq tdqsq associated dq pins ck ck rl measured to this point dqs , dqs early strobe dqs , dqs late strobe tlz ( dqs ) min tlz ( dqs ) max trpre trpre tdqsckmin tdqsckmax tqsh tqsl trpst trpst thz ( dqs ) min thz ( dqs ) max 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 41 re v 1.0 12 / 200 9 read timing; data strobe to data relationship the data strobe to data relationship is shown in the following figure and is applied when the dll and enabled and locked. rising data strobe edge parameters: tdqsq describes the latest valid transition of the asso ciated dq pins. tqh describes the earliest invalid transition of the associated dq pins. falling data strobe edge parameters: tdqsq describes the latest valid transition of the associated dq pins. tqh describes the earliest invalid transition of the assoc iated dq pins. data strobe to data relationship dout n + 6 dout n + 7 trpst ck ck t 0 t 1 t 3 t 5 t 6 t 7 t 9 dqs , dqs t 2 t 4 t 8 read nop cmd nop nop nop nop nop nop nop nop bank col n address dout n + 1 dout n + 2 dout n + 3 dout n + 4 dout n + 5 dq ( last data valid ) rl = al + cl trpre dout n + 6 dout n + 7 dout n dout n + 1 dout n + 2 dout n + 3 dout n + 4 dout n + 5 tlz ( dq ) min valid data thz ( dq ) min tdqsqmax valid data tqh tqh dout n tdqsqmin dq ( first data no longer valid ) all dq collectively 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 42 re v 1.0 12 / 200 9 read to read (cl=5, al=0) t 1 1 t 1 0 n o p n o p d o u t n + 6 d o u t n + 7 t r p s t c k c k t 0 t 1 t 3 t 5 t 6 t 7 t 9 t 2 t 4 t 8 n o p c m d n o p n o p r e a d n o p n o p n o p n o p n o p a d d r e s s d o u t n + 1 d o u t n + 2 d o u t n + 3 d o u t n + 4 d o u t n + 5 t c c d t r p r e d o u t n t 1 2 n o p t 1 3 n o p r l = 5 b a n k c o l b r e a d d o u t b + 6 d o u t b + 7 d o u t b + 1 d o u t b + 2 d o u t b + 3 d o u t b + 4 d o u t b + 5 d o u t b r l = 5 d q s , d q s d q r e a d ( b l 8 ) t o r e a d ( b l 8 ) n o p n o p t r p s t n o p c m d n o p n o p r e a d n o p n o p n o p n o p n o p a d d r e s s d o u t n + 1 d o u t n + 2 d o u t n + 3 t c c d t r p r e d o u t n n o p n o p r l = 5 b a n k c o l b r e a d d o u t b + 1 d o u t b + 2 d o u t b + 3 d o u t b r l = 5 d q s , d q s d q r e a d ( b l 4 ) t o r e a d ( b l 4 ) t r p r e t r p s t r e a d b a n k c o l n r e a d b a n k c o l n 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 43 re v 1.0 12 / 200 9 read to write (cl=5, al=0; cwl=5, al=0) t 1 1 t 1 0 n o p d o u t n + 6 d o u t n + 7 t w p s t c k c k t 0 t 1 t 3 t 5 t 6 t 7 t 9 t 2 t 4 t 8 n o p c m d n o p n o p w r i t e a d d r e s s d o u t n + 1 d o u t n + 2 d o u t n + 3 d o u t n + 4 d o u t n + 5 r e a d t o w r i t e c o m m a n d d e l a y = r l + t c c d + 2 t c k - w l t r p r e d o u t n t 1 2 n o p t 1 3 n o p r l = 5 b a n k c o l b d o u t b + 7 d o u t b + 1 d o u t b + 2 d o u t b + 3 d o u t b + 4 d o u t b + 5 w l = 5 d q s , d q s d q r e a d ( b l 8 ) t o w r i t e ( b l 8 ) n o p t w p s t n o p c m d n o p n o p n o p a d d r e s s d o u t n + 1 d o u t n + 2 d o u t n + 3 r e a d t o w r i t e c o m m a n d d e l a y = r l + t c c d / 2 + 2 t c k - w l t r p r e d o u t n n o p n o p r l = 5 r e a d d o u t b + 1 d o u t b + 2 d o u t b + 3 w l = 5 d q s , d q s r e a d ( b l 4 ) t o w r i t e ( b l 4 ) t w p r e t r p s t t 1 4 t 1 5 n o p n o p t w r p r e t r p s t b a n k c o l n r e a d n o p n o p n o p n o p n o p n o p d q n o p n o p t b l = 4 c l o c k s t w r t w t r r e a d b a n k c o l n w r i t e b a n k c o l b n o p d o u t b n o p n o p n o p n o p d o u t b d o u t b + 6 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 44 re v 1.0 12 / 200 9 read to read (cl=5, al=0) t 1 1 t 1 0 n o p n o p d o u t n + 6 d o u t n + 7 t r p s t c k c k t 0 t 1 t 3 t 5 t 6 t 7 t 9 t 2 t 4 t 8 n o p c m d n o p n o p n o p n o p n o p n o p n o p a d d r e s s d o u t n + 1 d o u t n + 2 d o u t n + 3 d o u t n + 4 d o u t n + 5 t c c d t r p r e d o u t n t 1 2 n o p t 1 3 n o p r l = 5 r e a d d o u t b + 1 d o u t b + 2 d o u t b + 3 d o u t b r l = 5 d q s , d q s d q r e a d ( b l 8 ) t o r e a d ( b c 4 ) n o p n o p t r p s t n o p c m d n o p n o p n o p n o p n o p n o p n o p a d d r e s s d o u t n + 1 d o u t n + 2 d o u t n + 3 t c c d t r p r e d o u t n n o p n o p r l = 5 r e a d r l = 5 d q s , d q s r e a d ( b c 4 ) t o r e a d ( b l 8 ) t r p r e t r p s t d q r e a d b a n k c o l n r e a d b a n k c o l n r e a d b a n k c o l b r e a d b a n k c o l b d o u t b + 6 d o u t b + 7 d o u t b + 1 d o u t b + 2 d o u t b + 3 d o u t b + 4 d o u t b + 5 d o u t b 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 45 re v 1.0 12 / 200 9 read to write (cl=5, al=0; cwl=5, al=0) t 1 1 t 1 0 n o p n o p d o u t n + 6 d o u t n + 7 t r p s t c k c k t 0 t 1 t 3 t 5 t 6 t 7 t 9 t 2 t 4 t 8 n o p c m d n o p n o p w r i t e a d d r e s s d o u t n + 1 d o u t n + 2 d o u t n + 3 d o u t n + 4 d o u t n + 5 t r p r e d o u t n t 1 2 n o p t 1 3 n o p r l = 5 r e a d d o u t b + 1 d o u t b + 2 d o u t b + 3 w l = 5 d q s , d q s d q n o p n o p t w p s t n o p c m d n o p n o p n o p a d d r e s s d o u t n + 1 d o u t n + 2 d o u t n + 3 r e a d t o w r i t e c o m m a n d d e l a y = r l + t c c d / 2 + 2 t c k - w l t r p r e d o u t n n o p n o p r l = 5 r e a d w l = 5 d q s , d q s r e a d ( b l 4 ) t o w r i t e ( b l 8 ) t w p r e t r p s t d q r e a d b a n k c o l n r e a d b a n k c o l n n o p b a n k c o l b w r i t e b a n k c o l b d o u t b + 6 d o u t b + 7 d o u t b + 1 d o u t b + 2 d o u t b + 3 d o u t b + 4 d o u t b + 5 d o u t b n o p n o p n o p n o p r e a d ( b l 8 ) t o w r i t e ( b c 4 ) n o p n o p n o p n o p t w p s t t w p r e d o u t b r e a d t o w r i t e c o m m a n d d e l a y = r l + t c c d + 2 t c k - w l 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 46 re v 1.0 12 / 200 9 write operation ddr3 burst operation during a read or write command, ddr3 will support bc4 and bl8 on the fly using address a12 during the read or write (auto precharge can be enabled or disabled). a12=0, bc4 (bc4 = burst chop, tccd=4) a12=1, bl8 a12 is used only for burst length control, no t as a column address. write timing violations motivation generally, if timing parameters are violated, a complete reset/initialization procedure has to be initiated to make sure the dram works properly. however, it is desirable for certain minor violatio ns that the dram is guaranteed not to hang up and errors be limited to that particular operation. for the following, it will be assumed that there are no timing violations w.r.t. to the write command itself (including odt, etc.) and that it does satisfy all timing requirements not mentioned below. data setup and hold violations should the strobe timing requirements (tds, tdh) be violated, for any of the strobe edges associated with a write burst, then wrong data might be written to the memory location ad dressed with the offending write command. subsequent reads from that location might result in unpredictable read data, however, the dram will work properly otherwise. strobe to strobe and strobe to clock violations should the strobe timing requirements ( tdqsh, tdqsl, twpre, twpst) or the strobe to clock timing requirements (tdss, tdsh, tdqss) be violated, for any of the strobe edges associated with a write burst, then wrong data might be written to the memory location addressed with the offending write co mmand. subsequent reads from that location might result in unpredict able read data, however the dram will work properly otherwise. write timing parameters this drawing is for example only to enumerate the strobe edges that belong to a write burst. no actual timing violations are shown here. for a valid burst all timing parameters for each edge of a burst need to be satisfied (not only for one edge - as shown). 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 47 re v 1.0 12 / 200 9 write timing definition note: 1. bl=8, wl=5 (al=0, cwl=5). 2. din n = data in from column n. 3. nop commands are shown for ease of illustration; other command may be valid at these times. 4. bl8 setting activated by either mr0 [a1:0=00] or mr0 [a1:0=01] and a12 = 1 during write command at t0. 4. tdqss must be met at each rising clock edge. tn ck ck t 0 t 1 t 3 t 5 t 6 t 7 t 9 t 2 t 4 t 8 nop cmd nop nop address dq nop w l = a l + c w l nop nop din n + 6 din n + 7 din n + 1 din n + 2 din n + 3 din n + 4 din n + 5 din n tdqss tdsh tdqsl tdss twpst ( min ) tdqsl ( min ) tdss tdss tdss tdss dq tdsh tdqsh tdqsl tdss tdqsh twpre ( min ) tdss tdsh tdqsh tdsh tdsh tdss tdss tdss dq din n + 6 din n + 7 din n + 1 din n + 2 din n + 3 din n + 4 din n + 5 din n tdsh tdqsh tdqsh tdsh tdqsh tdsh tdsh nop tdqsh twpre ( min ) write bank col n twpre ( min ) tdqsh nop tdss tdqsl tdss tdss nop tdsh tdsh din n + 6 din n + 7 din n + 1 din n + 2 din n + 3 din n + 4 din n + 5 din n tdqsh tdsh nop tdss tdss tdqsl ( min ) twpst ( min ) tdqsl ( min ) twpst ( min ) tdqss dqs , dqs ( tdqss min ) dqs , dqs ( tdqss nominal ) dqs , dqs ( tdqss max ) 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 48 re v 1.0 12 / 200 9 wri te to write (wl=5; cwl=5, al=0) t 1 1 t 1 0 n o p d o u t n + 7 c k c k t 0 t 1 t 3 t 5 t 6 t 7 t 9 t 2 t 4 t 8 n o p c m d n o p n o p n o p a d d r e s s d o u t n + 1 d o u t n + 2 d o u t n + 3 d o u t n + 5 t c c d t w p r e t 1 2 n o p t 1 3 n o p w l = 5 d o u t b + 6 d o u t b + 7 d o u t b + 1 d o u t b + 2 d o u t b + 3 d o u t b + 5 w l = 5 d q s , d q s d q w r i t e ( b l 8 ) t o w r i t e ( b l 8 ) n o p t w p s t n o p c m d n o p n o p n o p a d d r e s s d o u t n + 1 d o u t n + 2 d o u t n + 3 t c c d t r p r e n o p n o p w l = 5 r e a d d o u t b + 1 d o u t b + 2 d o u t b + 3 w l = 5 d q s , d q s w r i t e ( b c 4 ) t o w r i t e ( b c 4 ) t w p r e t w p s t t w p s t b a n k c o l n w r i t e n o p n o p n o p n o p n o p w r i t e d q w r i t e b a n k c o l n w r i t e b a n k c o l b n o p b a n k c o l b d o u t n n o p n o p n o p n o p d o u t n + 4 d o u t n + 6 d o u t b d o u t b + 4 t b l = 4 t w r t w t r t b l = 4 t w r t w t r d o u t n d o u t b 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 49 re v 1.0 12 / 200 9 write to read (rl=5, cl=5, al=0; wl=5, cwl=5, al=0; bl=4) t 1 1 t 1 0 n o p d o u t n + 7 c k c k t 0 t 1 t 3 t 5 t 6 t 7 t 9 t 2 t 4 t 8 n o p c m d n o p n o p n o p a d d r e s s d o u t n + 1 d o u t n + 2 d o u t n + 3 d o u t n + 5 t w p r e t 1 2 n o p t 1 3 r e a d w l = 5 d q s , d q s d q w r i t e ( b l 8 ) t o r e a d ( b c 4 / b l 8 ) n o p n o p c m d n o p n o p n o p a d d r e s s d o u t n + 1 d o u t n + 2 d o u t n + 3 t r p r e d o u t n n o p r e a d w l = 5 d q s , d q s w r i t e ( b c 4 ) t o r e a d ( b c 4 / b l 8 ) t w p s t b a n k c o l n w r i t e n o p n o p n o p n o p n o p n o p d q w r i t e b a n k c o l n n o p n o p b a n k c o l b d o u t n n o p n o p n o p n o p d o u t n + 4 d o u t n + 6 t w t r r l = 5 t b l = 4 t w p s t b a n k c o l b t w t r r l = 5 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 50 re v 1.0 12 / 200 9 write to write (wl=5, cwl=5, al=0) t 1 1 t 1 0 n o p d o u t n + 7 c k c k t 0 t 1 t 3 t 5 t 6 t 7 t 9 t 2 t 4 t 8 n o p c m d n o p n o p n o p a d d r e s s d o u t n + 1 d o u t n + 2 d o u t n + 3 d o u t n + 5 t c c d t w p r e t 1 2 n o p t 1 3 n o p w l = 5 d o u t b + 1 d o u t b + 2 w l = 5 d q s , d q s d q w r i t e ( b l 8 ) t o w r i t e ( b c 4 ) n o p t w p s t n o p c m d n o p n o p n o p a d d r e s s d o u t n + 1 d o u t n + 2 d o u t n + 3 t c c d t r p r e d o u t n n o p n o p w l = 5 r e a d d o u t b + 1 d o u t b + 2 d o u t b + 3 w l = 5 d q s , d q s w r i t e ( b c 4 ) t o w r i t e ( b l 8 ) t w p r e t w p s t t w p s t b a n k c o l n w r i t e n o p n o p n o p n o p n o p w r i t e d q w r i t e b a n k c o l n w r i t e b a n k c o l b n o p b a n k c o l b d o u t n n o p n o p n o p n o p d o u t n + 4 d o u t n + 6 d o u t b t b l = 4 t w r t w t r t b l = 4 t w r t w t r d o u t b + 3 d o u t b + 6 d o u t b + 7 d o u t b + 3 d o u t b + 5 d o u t b + 4 d o u t b 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 51 re v 1.0 12 / 200 9 refresh command the refresh command (ref) is used during normal operation of the ddr3 sdrams. this command is not per sistent, so it must be issued each time a refresh is required. the ddr3 sdram requires refresh cycles at an average periodic interval of trefi. when ?? , ??? , and ??? are held low and we high at the rising edge of the clock, the chip enters a refresh cycle. all banks of the sdram must be precharged and idle for a minimum of the precharge time trp(min) before the refresh command can be applied. the refre sh addressing is generated by the internal refresh controller. this makes the address bits don?t care during a refresh command. an internal address counter suppliers the address during the refresh cycle. no control of the exter nal address bus is require d once this cycle has started. when the refresh cycle has completed, all banks of the sdram will be in the precharged (idle) state. a delay between the refresh command and the next valid command, except nop or des, must be greater than or equal to the mini mum refresh cycle time trfc(min) as shown in the following figure. in general, a refresh command needs to be issued to the ddr3 sdram regularly every trefi interval. to allow for improved efficiency in scheduling and switching between tasks, some flexibi lity in the absolute refresh interval is provided. a maximum of 8 refresh commands can be postponed during operation of the ddr3 sdram, meaning that at no point in time more than a total of 8 refresh commands are allowed to be postponed. in case that 8 ref resh commands are postponed in a row, the result ing maximum interval between the surrounding refresh commands is limited to 9 x trefi. a maximum of 8 additional refresh commands can be issued in advance (pulled in), with each one reducing the number of regular refresh commands required later by one. note that pulling in more than 8 refresh commands in advance does not further reduce the number of regular refresh commands required later, so that the resulting maximum interval between two surrounding refre sh command is limited to 9 x trefi. before entering self - refresh mode, all postponed refresh commands must be executed. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 52 re v 1.0 12 / 200 9 self - refresh entry/exit timing postponing refresh commands (example) pulled - in refresh commands (example) ck ck t 0 t 1 ta 0 tb 0 tb 1 tb 3 ta 1 tb 2 nop cmd nop ref valid nop ref nop valid valid valid valid ref tc 0 tc 1 valid trfc trfc ( min ) trefi ( max , 9 x trefi ) dram must be idle dram must be idle time break 9 x trefi trefi trefi 8 ref - command postponed t 9 x trefi trefi t trefi 8 ref - commands pulled - in 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 53 re v 1.0 12 / 200 9 s elf - refresh o peration the self - refresh command can be used to retain data in the ddr3 sdram, even if the reset of the system is powered down. when in the self - refresh mode, the ddr3 sdram retains data without external clocking. the ddr3 sdram device has a built - in time r to accommodate self - refresh operation. the self - refresh entry (sre) command is defined by having ?? , ??? , ??? , and ??? held low with we high at the rising edge of the clock. before issuing the self - refreshing - entry command, the ddr3 sdram must be idle w ith all bank precharge state with trp sat isfied. also, on - die termination must be turned off before issuing self - refresh - entry command, by either registering odt pin low odtl + 0.5tck prior to the self - refresh entry command or using mrs to mr1 command. once the self - refresh entry com mand is registered, cke must be held low to keep the device in self - refresh mode. during normal operation (dll on), mr1 (a0=0), the dll is automatically disabled upon entering self - refresh and is automatically enabled (inclu ding a dll - reset) upon exiting self - refresh. when the ddr3 sdram has entered self - refresh mode, all of the external control signals, execpt cke and ????? , are don?t care. for proper self - refresh operation, all power supply and reference pins (vdd, vddq, vss, vssq, vrefca, and vrefdq) must be at valid levels. the dram initiates a minimum of one refresh command internally within tcke period once it enters self - refresh mode. the clock is internally disabled during self - refresh operation to save power. the m inimum time that the ddr3 sdram must remain in self - refresh mode is tcke. the user may change the external clock frequency or halt the external clock tcksre after self - refresh entry is registered; however, the clock must be restarted and stable tcksrx befo re the device can exit self - refresh mode. the procedure for exiting self - refresh requires a sequence of events. first, the clock must be stable prior to cke going back high. once a self - refresh exit command (srx, combination of cke going high and either n op or deselect on command bus) is registered, a delay of at least txs must be satisfied before a valid command not requiring a locked dll can be issued to the device to allow for any internal refresh in progress. before a command which requires a locked dl l can be applied, a delay of at least txsdll and applicable zqcal function requirements [tbd] must be satisfied. before a command that requires a locked dll can be applied, a delay of at least txsdll must be satisfied. depending on the system environment and the amount of time spent in self - refresh, zq calibration commands may be required to compensate for the voltage and temperature drift as described in zq calibration commands. to issue zq calibration commands, applicable timing requirements must be s atisfied. cke must remain high for the entire self - refresh exit period txsdll for proper operation except for self - refresh re - entry. upon exit from self - refresh, the ddr3 sdram can be put back into self - refresh mode after waiting at least txs period and i ssuing one refresh command (refresh period of trfc). nop or deselect commands must be registered on each positive clock edge during the self - refresh exit interval txs. odt must be turned off during txsdll. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 54 re v 1.0 12 / 200 9 the use of self - refresh mode instructs the possib ility that an internally times refresh event can be missed when cke is raised for exit from self - refresh mode. upon exit from self - refresh, the ddr3 sdram requires a minimum of one extra refresh com mand before it is put back into self - refresh mode. self - refresh entry/exit timing ck , ck t 1 t 2 ta 0 tb 0 tc 0 tc 1 te 0 tf odtl tcksre t c k s r x tcpded trf sre nop valid 2 ) tckesr txsdll txs cmd odt note : 1 . only nop or des commands 2 . valid commands not requiring a locked dll 3 . valid commands requiring a locked dll t 0 td 0 valid cke nop srx nop 1 ) valid 3 ) valid valid valid valid enter self refresh exit self refresh do not care time break 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 55 re v 1.0 12 / 200 9 power - down modes power - down entry and exit power - down is synchronously entered when cke is registered low (along with nop or deselect command). cke is not allowed to go low while mode register set command, mpr operations, zqcal operations, dll locking or read/write operation are in progress. cke is allowed to go low while any of other operation such as row activation, precharge or auto precharge and refresh are in progress, but power - down idd spec will not be applied until finish ing those operation. the dll should be in a locked state when power - down is entered for fastest power - down exit timing. if the dll is not locked during power - down entry, the dll must be reset after exiting power - down mode for proper read operation and sync hronous odt operation. dram design provides all ac and dc timing and voltage specification as well proper dll operation with any cke intensive operations as long as dram controller complies with dram specifications. during power - down, if all banks are clos ed after any in progress commands are completed, the device will be in precharge power - down mode; if any bank is open after in progress commands are completed, the device will be in active power - down mode. entering power - down deactivates the input and out put buffers, excluding ck, ck, odt, ??? , and ????? . to protect dram internal delay on cke line to block the input signals, multiple nop or deselect commands are needed during the cke switch off and cycle(s) after, this timing period are defined as tcpded. cke_low will result in deactivation of command and address receivers after tcpded has expired. power - down entry definitions status of dram mrs bit a12 dll pd exit relevant parameters active (a bank or more open) don't care on fast txp to any valid command . precharged (all banks precharged) 0 off slow txp to any valid command. since it is in precharge state, commands here will be act, ar, mrs/emrs, pr, or pra. txpdll to commands who need dll to operate, such as rd, rda, or odt control line. precharged (al l banks precharged) 1 on fast txp to any valid command. also the dll is disabled upon entering precharge power - down (slow exit mode), but the dll is kept enabled during precharge power - down (fast exit mode) or active power - down. in power - down mode, cke lo w, ????? high, and a stable clock signal must be maintained at the inputs of the ddr3 sdram, and odt should be in a valid state but all other input signals are don?t care (if ????? goes low during power - down, the dram will be out of pd mode and into reset s tate). cke low must be maintain until tcke has been satisfied. power - down duration is limited by 9 times trefi of the device. the power - down state is synchronously exited when cke is registered high (along with a nop or deselect command). cke high must be maintained until tcke has been satisfied. a valid, executable command can be applied with power - down exit latency, txp and/or txpdll after cke goes high. power - down exit latency is defined at ac spec table of this datasheet. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 56 re v 1.0 12 / 200 9 active power - down entry and ex it timing diagram t iming diagrams for cke with pd entry, pd exit with read, read with auto precharge, write and write with auto precharge, activate, precharge, refresh, mrs: power - down entry after read and read with auto precharge power - down entry afte r write with auto precharge t 0 t 1 t 2 ta 0 ta 1 tb 0 tb 1 tc 0 ck ck valid nop nop nop nop nop nop cmd cke valid valid tis tih tpd tih tis tcke address valid valid tcpded enter power - down exit power - down txp do not care time break t 0 t 1 ta 0 ta 1 ta 2 ta 3 ta 4 ta 5 ck ck rd or rda nop nop nop nop nop nop cmd cke address valid valid power - down entry do not care time break ta 6 ta 7 ta 8 tb 0 tb 1 nop nop nop nop nop valid valid tis tcpded dqs rl = al + cl din b din b + 1 din b + 2 din b + 3 din b + 4 din b + 5 din b + 6 din b + 7 din b din b + 1 din b + 2 din b + 3 trdpden bl 8 bc 4 tpd t 0 t 1 ta 0 ta 1 ta 2 ta 3 ta 4 ta 5 ck ck write nop nop nop nop nop nop cmd cke address bank , col n power - down entry do not care time break ta 6 ta 7 tb 0 tb 1 tb 2 nop nop nop nop nop nop tis tcpded dqs wl = al + cwl din b din b + 1 din b + 2 din b + 3 din b + 4 din b + 5 din b + 6 din b + 7 din b din b + 1 din b + 2 din b + 3 twrapden bl 8 bc 4 wr ( 1 ) tb 3 nop tc 0 valid tpd start internal precharge 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 57 re v 1.0 12 / 200 9 power - down entry after write precharge power - down (fast exit mode) entry and exit precharge power - down (slow exit mode) entry and exit refresh command to power - down entry t 0 t 1 ta 0 ta 1 ta 2 ta 3 ta 4 ta 5 ck ck write nop nop nop nop nop nop cmd cke address bank , col n power - down entry do not care time break ta 6 ta 7 tb 0 tb 1 tb 2 nop nop nop nop nop nop tis tcpded dqs wl = al + cwl din b din b + 1 din b + 2 din b + 3 din b + 4 din b + 5 din b + 6 din b + 7 din b din b + 1 din b + 2 din b + 3 twrpden bl 8 bc 4 tc 0 nop tpd wr t 0 t 1 t 2 ta 0 ta 1 tb 0 tb 1 tc 0 ck ck write nop nop nop nop nop nop cmd cke do not care time break nop tis tcpded tih tcke tis txp nop valid tpd enter power - down mode exit power - down mode t 0 t 1 t 2 ta 0 ta 1 tb 0 tb 1 tc 0 ck ck write nop nop nop nop nop valid cmd cke do not care time break nop tis tcpded tih tcke tis txp nop valid tpd enter power - down mode exit power - down mode td 0 valid txpdll valid t 0 t 1 t 2 t 3 ta 0 ta 1 ck ck ref nop nop valid cmd cke do not care time break nop tis tcpded valid tpd valid valid trefpden address 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 58 re v 1.0 12 / 200 9 active command to power - down entry prechar ge/precharge all command to power - down entry mrs command to power - down entry t 0 t 1 t 2 t 3 ta 0 ta 1 ck ck active nop nop valid cmd cke do not care time break nop tis tcpded valid tpd valid valid tactpden address t 0 t 1 t 2 t 3 ta 0 ta 1 ck ck pre prea nop nop valid cmd cke do not care time break nop tis tcpded valid tpd valid valid tprepden address t 0 t 1 ta 0 ta 1 tb 0 tb 1 ck ck nop nop valid cmd cke do not care time break nop tis tcpded valid tpd valid tmrspden address mrs valid 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 59 re v 1.0 12 / 200 9 on - die termination (odt) odt (on - die termination) is a feature of the ddr3 sdram that allows the dram to turn on/off termination resistance for each dq, dqs, ??? , and dm for x4 and x8 configuration and tdqs, ???? for x8 configuration, when enabled via a11=1 in mr1) via the odt control pin. the odt feature is designed to improve signal integrity of the memory channel by allowing the dram controller to independently turn on/off termination resistance for any or all dram devices. the odt feature is turned off and not supported in self - refresh mode. a simple functional representation of the dram odt feature is shown as below. the switch is enabled by the internal odt contro l logic, which uses the external odt pin and other control information. the value of rtt is determined by the settings of mode register bits. the odt pin will be ignored if the mode register mr1 and mr2 are programmed to disable odt and in self - refresh mod e. odt mode register and odt truth table the odt mode is enabled if either of mr1 {a2, a6, a9} or mr2 {a9, a10} are non - zero. in this case, the value of rtt is deter mined by the settings of those bits. application: controller sends wr command together wi th odt asserted. one possible application: the rank that is being written to provides termination. dram turns on termination if it sees odt asserted (except odt is disabled by mr) dram does not use any write or read command decode information. termination truth table odt pin dram termination state 0 off 1 on, (off, if disabled by mr1 {a2, a6, a9} and mr2{a9, a10} in general) to other circuitry like rcv , ... vddq / 2 rtt switch dq , dqs , dm , tdqs odt 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 60 re v 1.0 12 / 200 9 synchronous odt mode synchronous odt mode is selected whenever the dll is turned on and locked. based on the power - down definiti on, these modes are: any bank active with cke high refresh with cke high idle mode with cke high active power down mode (regardless of mr0 bit a12) percharge power down mode if dll is enabled during precharge power down by mr0 bit a12 the direct odt featur e is not supported during dll - off mode. the on - die termination resistors must be disabled by continu - ously registering the odt pin low and/or by programming the rtt_nom bits mr1{a9,a6,a2} to {0,0,0} via a mode register set command during dll - off mode. in s ynchronous odt mode, rtt will be turned on odtlon clock cycles after odt is sampled high by a rising clock edge and turned off odtloff clock cycles after odt is registered low by a rising clock edge. the odt latency is tied to the write latency (wl) by: od tlonn = wl - 2; odtloff = wl - 2. odt latency and posted odt in synchronous odt mode, the additive latency (al) programmed into the mode register (mr1) also applies to the odt sig nal. the dram internal odt signal is delayed for a number of clock cycles def ined by the additive latency (al) relative to the external odt signal. odtlon = cwl + al - 2; odtloff = cwl + al - 2. for details, refer to ddr3 sdram latency definitions. odt latency symbol parameter ddr3 sdram unit odtlon odt turn on latency wl - 2 = c wl + al - 2 tck odtloff odt turn off latency wl - 2 = cwl + al - 2 tck 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 61 re v 1.0 12 / 200 9 timing parameters in synchronous odt mode, the following timing parameters apply: odtlon, odtloff, taon min/max, aof min/max. minimum rtt turn - on time (taon min) is the point in t ime when the device leaves high impedance and odt resistance begins to turn on. maximum rtt turn - on time (taon max) is the point in time when the odt resistance is fully on. both are measured from odtlon. minimum rtt turn - off time (taof min) is the point i n time when the device starts to turn off the odt resistance. maximum rtt turn off time (taof max) is the point in time when the on - die termination has reached high impedance. both are measured from odtloff. when odt is asserted, it must remain high until odth4 is satisfied. if a write command is registered by the sdram with odt high, then odt must remain high until odth4 (bl=4) or odth8 (bl=8) after the write command. odth4 and odth8 are measured from odt registered high to odt registered low or from the r egistration of a write command until odt is registered low. synchronous odt timing example for al=3; cwl=5; odtlon=al+cwl - 2=6; odtloff=al+cwl - 2=6 synchronous odt example with bl=4, wl=7 odt must be held for at least odth4 after assertion (t1); odt must be kept high odth4 (bl=4) or odth8 (bl=8) after write command (t7). odth is measured from odt first registered high to odt first registered low, or from registration of write command with odt high to odt registered low. note that although odth4 is satisfie d from odt registered at t6 odt must not go low before t11 as odth4 must also be satisfied from the registration of the write command at t7. ck ck al = 3 t 11 t 10 t 0 t 1 t 3 t 5 t 6 t 7 t 9 t 2 t 4 t 8 t 12 odt odth 4 , min odtlon = cwl + al - 2 odtloff = cwl + al - 2 t 13 t 14 t 15 cwl - 2 dram _ rtt taonmin taonmax taonmin taonmax rtt _ nom al = 3 transitioning do not care cke ck ck odth 4 t 11 t 10 t 0 t 1 t 3 t 5 t 6 t 7 t 9 t 2 t 4 t 8 t 12 odt odtlon = cwl - 2 t 13 t 14 t 15 odtloff = wl - 2 dram _ rtt taonmin taonmax taofmax rtt _ nom t 16 t 17 t 18 odth 4 min odth 4 odtloff = cwl - 2 odtlon = cwl - 2 taofmin taofmax taonmax taonmin taofmin nop nop nop nop nop nop nop wrs 4 nop nop nop nop nop nop nop nop nop nop nop transitioning do not care 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 62 re v 1.0 12 / 200 9 odt during reads: as the ddr3 sdram cannot terminate and drive at the same time, rtt must be disabled at least half a clock cycle before the read preamble by driving the odt pin low appropriately. rtt may not be enabled until the end of the post - amble as shown in the following figure. dram turns on the termination when it stops driving which is determined by thz. i f dram stops driving early (i.e. thz is early), then taonmin time may apply. if dram stops driving late (i.e thz is late), then dram complies with taonmax timing. note that odt may be disabled earlier before the read and enabled later after the read than s hown in this example. odt must be disabled externally during reads by driving odt low. (example: cl=6; al=cl - 1=5; rl=al+cl=11; cwl=5; odtlon=cwl+al - 2=8; odtloff=cwl+al - 2=8) ck ck t 11 t 10 t 0 t 1 t 3 t 5 t 6 t 7 t 9 t 2 t 4 t 8 t 12 t 13 t 14 t 15 t 16 cmd address rl = al + cl rtt _ nom rtt odtloff = cwl + al - 2 taofmax taofmin odtlon = cwl + al - 2 rtt _ nom taonmax odt dram odt dqsdiff din b din b + 1 din b + 2 din b + 3 din b + 4 din b + 5 din b + 6 din b + 7 dq read nop nop nop nop nop nop nop nop nop nop nop nop nop nop nop nop valid 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 63 re v 1.0 12 / 200 9 dynamic odt in certain application cases and to further enhance signal integri ty on the data bus, it is desirable that the termination strength of the ddr3 sdram can be changed without issuing an mrs command. this requirement is supported by the dynamic odt feature as described as follows: functional description the dynamic odt mo de is enabled if bit (a9) or (a10) of mr2 is set to ?1?. the function is described as follows: two rtt values are available: rtt_nom and rtt_wr. the value for rtt_nom is preselected via bits a[9,6,2] in mr1. the value for rtt_wr is preselected via bits a[ 10,9] in mr2. during operation without write commands, the termination is controlled as follows: nominal termination strength rtt_nom is selected. termination on/off timing is controlled via odt pin and latencies odtlon and odtloff. when a write command (w r, wra, wrs4, wrs8, wras4, wras8) is registered, and if dynamic odt is enabled, the termi nation is controlled as follows: a latency odtlcnw after the write command, termination strength rtt_wr is selected. a latency odtlcwn8 (for bl8, fixed by mrs or sel ected otf) or odtlcwn4 (for bc4, fixed by mrs or selected otf) after the write command, termination strength rtt_nom is selected. termination on/off timing is controlled via odt pin and odtlon, odtloff. the following table shows latencies and timing parame ters which are relevant for the on - die termination control in dynamic odt mode. the dynamic odt feature is not supported at dll - off mode. user must use mrs command to set rtt_wr, mr2[a10,a9 = [0,0], to disable dynamic odt externally. when odt is asserted, it must remain high until odth4 is satisfied. if a write command is registered by the sdram with odt high, then odt must remain high until odth4 (bl=4) or odth8 (bl=8) after the write command. odth4 and odth8 are measured from odt registered high to odt r egistered low or from the registration of write command until odt is register low. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 64 re v 1.0 12 / 200 9 latencies and timing parameters relevant for dynamic odt name and description abbr. defined from defined to definition for all ddr3 speed pin unit odt turn - on latency odtl on registering external odt signal high turning termination on odtlon=wl - 2 tck odt turn - off latency odtloff registering external odt signal low turning termination off odtloff=wl - 2 tck odt latency for changing from rtt_nom to rtt_wr odtlcnw registering external write command change rtt strength from rtt_nom to rtt_wr odtlcnw=wl - 2 tck odt latency for change from rtt_wr to rtt_nom (bl=4) odtlcwn4 registering external write command change rtt strength from rtt_wr to rtt_nom odtlcwn4=4+odtloff tck odt l atency for change from rtt_wr to rtt_nom (bl=8) odtlcwn8 registering external write command change rtt strength from rtt_wr to rtt_nom odtlcwn8=6+odtloff tck(avg) minimum odt high time after odt assertion odth4 registering odt high odt registered low odth4=4 tck(avg) minimum odt high time after write (bl=4) odth4 registering write with odt high odt registered low odth4=4 tck(avg) minimum odt high time after write (bl=8) odth8 registering write with odt high odt register low odth8=6 tck(avg) rtt ch ange skew tadc odtlcnw odtlcwn rtt valid tadc(min)=0.3tck(avg) tadc(max)=0.7tck(avg) tck(avg) note: taof,nom and tadc,nom are 0.5tck (effectively adding half a clock cycle to odtloff, odtcnw, and odtlcwn) odt timing diagrams dynamic odt: behavior with odt being asserted before and after the write note: example for bc4 (via mrs or otf), al=0, cwl=5. odth4 applies to first registering odt high and to the registration of the write command. in tihs example odth4 would be satisfied if odt went low at t8. (4 clocks after the write command). ck ck t 11 t 10 t 0 t 1 t 3 t 5 t 6 t 7 t 9 t 2 t 4 t 8 t 12 t 13 t 14 t 15 t 16 cmd odt rtt dqs / dqs dq odtlon odtlcwn 4 t 17 odtlcnw taonmin taonmax tadcmin tadcmax wl tadcmin tadcmax taofmin taofmax address rtt _ wr din n din n + 1 din n + 2 din n + 3 odth 4 odtloff nop nop nop nop wrs 4 nop nop nop nop nop nop nop nop nop nop nop nop nop valid odth 4 rtt _ nom do not care transitioning rtt _ nom 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 65 re v 1.0 12 / 200 9 dynamic odt: behavior without write command, al=0, cwl=5 note: odth4 is defined from odt registered high to odt registered low, so in this example odth4 is satisfied; odt regis tered low at t5 would also be legal. dynami c odt: behavior with odt pin being asserted together with write command for the duration of 6 clock cycles. note: example for bl8 (via mrs or otf), al=0, cwl=5. in this example odth8=6 is exactly satisfied. tadcmax ck ck t 11 t 10 t 0 t 1 t 3 t 5 t 6 t 7 t 9 t 2 t 4 t 8 cmd odt rtt dqs / dqs dq odtlon odtloff taonmin taonmax tadcmin rtt _ nom valid valid valid valid valid valid valid valid valid valid valid valid address odth 4 odtloff do not care transitioning taofmax taofmin ck ck t 11 t 10 t 0 t 1 t 3 t 5 t 6 t 7 t 9 t 2 t 4 t 8 cmd odt rtt dqs / dqs dq odth 8 odtlon odtlcnw taonmin taonmax odtloff wl rtt _ wr nop wrs 8 nop nop nop nop nop nop nop nop nop nop valid din h din h + 1 din h + 2 din h + 3 din h + 4 din h + 5 din h + 6 din h + 7 odtlcwn 8 do not care transitioning address 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 66 re v 1.0 12 / 200 9 dynamic odt: behavior with odt pin being asserte d together with write command for a duration of 6 clock cycles, example for bc4 (via mrs or otf), al=0, cwl=5. dynamic odt: behavior with odt pin being asserted t ogether with write command for the duration of 4 clock cycles. ck ck # t 11 t 10 t 0 t 1 t 3 t 5 t 6 t 7 t 9 t 2 t 4 t 8 odt rtt dqs / dqs dq odtlon rtt _ wr odtlcnw taonmin taofmin taofmax taonmax odtloff wl odth 4 odtlcwn 4 cmd nop wrs 4 nop nop nop nop nop nop nop nop nop nop valid address din n din n + 1 din n + 2 din n + 3 do not care transitioning ck ck t 11 t 10 t 0 t 1 t 3 t 5 t 6 t 7 t 9 t 2 t 4 t 8 odt rtt dqs / dqs dq odtlon rtt _ wr rtt _ nom odtlcnw taonmin tadcmin tadcmax taofmin taofmax taonmax odtloff wl odth 4 odtlcwn 4 cmd nop wrs 4 nop nop nop nop nop nop nop nop nop nop valid address din n din n + 1 din n + 2 din n + 3 do not care transitioning 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 67 re v 1.0 12 / 200 9 asynchronous odt mode asynchronous odt mode is selected when dram runs in dllon mode, but dll is temporarily disabled (i.e. frozen) in pre charge power - down (by mr0 bit a12). based on the power down mode definitions, this is currently precharge power down mode if dll is disable d during precharge power down by mr0 bit a12. in asynchronous odt timing mode, internal odt command is not delayed by additive latency (al) relative to the external odt command. in asynchronous odt mode, the following timing parameters apply: taonpd min/m ax, taofpd min/max. minimum rtt turn - on time (taonpd min) is the point in time when the device termination circuit leaves high impedance state and odt resistance begins to turn on. maximum rtt turn on time (taonpd max) is the point in time when the odt re sistance is fully on. taonpdmin and taonpdmax are measured from odt being sampled high. minimum rtt turn - off time (taofpdmin) is the point in time when the devices termination circuit starts to turn off the odt resis tance. maximum odt turn off time (taofp dmax) is the point in time when the on - die termination has reached high impedance. taofpdmin and taofpdmax are measured from odt being sample low. asynchronous odt timings on ddr3 sdram with fast odt transition: al is ignored. in precharge power down, odt receiver remains active, however no read or write command can be issued, as the respective add/cmd receivers may be disabled. asynchronous odt timing parameters for all speed bins symbol description min max unit taonpd asynchronous rtt turn - on delay (po wer - down with dll frozen) 1 9 ns taofpd asynchronous rtt turn - off delay (power - down with dll frozen) 1 9 ns odt timing parameters for power down (with dll frozen) entry and exit transition period description min max odt to rtt turn - on delay min{ odtlon * tck + taonmin; taonpdmin } min{ (wl - 2) * tck + taonmin; taonpdmin } max{ odtlon * tck + taonmax; taonpdmax } max{ (wl - 2) * tck + taonmax; taonpfmax } odt to rtt turn - off delay min{ odtloff * tck + taofmin; taofpdmin } min{ (wl - 2) * tck + taofmin; taofpdmin } max{ odtloff * tck + taofmax; taofpdmax } max{ (wl - 2) * tck + taofmax; taofpdmax } tanpd wl - 1 ck ck # t 11 t 10 t 0 t 1 t 3 t 5 t 6 t 7 t 9 t 2 t 4 t 8 odt rtt taonpdmin cke tih tis t 12 t 13 t 14 t 15 taonpdmax taofpdmin taofpdmax tih tis do not care transitioning 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 68 re v 1.0 12 / 200 9 synchronous to asynchronous odt mode transition during power - down entry if dll is selected to be frozen in precharge power down mode by the sett ing of bit a12 in mr0 to 0, there is a transition period around power down entry, where the ddr3 sdram may show either synchronous or asynchronous odt behavior. the transition period is defined by the parameters tanpd and tcpded(min). tanpd is equal to ( wl - 1) and is counted back wards in time from the clock cycle where cke is first registered low. tcpded(min) starts with the clock cycle where cke is first registered low. the transition period begins with the starting point of tanpd and terminates at the e nd point of tcpded(min). if there is a refresh command in progress while cke goes low, then the transition period ends at the later one of trfc(min) after the refresh command and the end point of tcpded(min). please note that the actual starting point at t anpd is excluded from the transition period, and the actual end point at tcpded(min) and trfc(min, respectively, are included in the transition period. odt assertion during the transition period may result in an rtt changes as early as the smaller of taonp dmin and (odt lon*tck+taonmin) and as late as the larger of taonpdmax and (odtlon*tck+taonmax). odt de - assertion during the transi tion period may result in an rtt change as early as the smaller of taofpdmin and (odtloff*tck+taofmin) and as late as the lar ger of taofpdmax and (odtloff*tck+taofmax). note that, if al has a large value, the range where rtt is uncertain becomes quite large. the following figure shows the three different cases: odt_a, synchronous behavior before tanpd; odt_b has a state change d uring the transition period; odt_c shows a state change after the transition period. synchronous to asynchronous transition during precharge power down (with dll frozen) entry (al=0; cwl=5; tanpd=wl - 1=4) ck ck cke cmd last sync . odt tanpd rtt sync . or async . odt odtloff taofmax taofmin taofpdmin taofpdmax odtloff + taofpdmin odtloff + taofpdmax rtt taofpdmin first async . odt rtt nop nop nop nop nop nop nop nop nop nop nop nop t 1 t 2 t 3 t 4 t 5 t 6 t 7 t 8 t 9 t 10 t 11 t 12 pd entry transition period do not care time break transitioning tcpdedmin tcpded nop rtt rtt rtt taofpdmax 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 69 re v 1.0 12 / 200 9 asynchronous to synchronous odt mode transition d uring power - down exit if dll is selected to be frozen in precharge power down mode by the setting of bit a12 in mr0 to 0, there is also a transition period around power down exit, where either synchronous or asynchronous response to a change in odt must be expected from the ddr3 sdram. this transition period starts tanpd before cke is first registered high, and ends txpdll after cke is first registered high. tanpd is equal to (wl - 1) and is counted (backwards) from the clock cycle where cke is first regis tered high. odt assertion during the transition period may result in an rtt change as early as the smaller of taonpdmin and (odt - lon*tck+taonmin) and as late as the larger of taonpdmax and (odtlon*tck+taonmax). odt de - assertion during the tran sition perio d may result in an rtt change as early as the smaller of taofpdmin and (odtloff*tck+taofmin) and as late as the larger of taofpdmax and (odtoff*tck+taofmax). note that if al has a large value, the range where rtt is uncertain becomes quite large. the follo wing figure shows the three different cases: odt_c, asynchronous response before tanpd; odt_b has a state change of odt during the transition period; odt_a shows a state change of odt after the transition period with synchronous response. asynchronous to synchronous transition during precharge power down (with dll frozen) exit (cl=6; al=cl - 1; cwl=5; tanpd=wl - 1=9) ck ck odt _ c _ sync dram _ rtt _ c _ sync odt _ b _ tran taofpdmax taofpdmin dram _ rtt _ b _ tran odt _ a _ async dram _ rtt _ a _ async t 0 t 1 t 2 ta 0 ta 1 ta 2 ta 3 ta 4 ta 5 ta 6 tb 0 tb 1 tb 2 tc 0 tc 1 tc 2 td 0 do not care time break transitioning td 1 cmd nop nop nop nop nop nop nop nop nop nop nop nop cke nop txpdll pd exit transition period rtt rtt taofpdmin odtloff + taofmax odtloff + taofmin taofpdmax tanpd nop taofmax rtt odtloff taofmin 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 70 re v 1.0 12 / 200 9 asynchronous to synchronous odt mode during short cke high and short cke low periods if the total time in precharge power down state or idle st ate is very short, the transition periods for pd entry and pd exit may overlap. in this case, the response of the ddr3 sdrams rtt to a change in odt state at the input may be synchronous or asynchronous from the state of the pd entry transition period to t he end of the pd exit transition period (even if the entry ends later than the exit period). if the total time in idle state is very short, the transition periods for pd exit and pd entry may overlap. in this case, the response of the ddr3 sdrams rtt to a change in odt state at the input may be synchronous or asynchronous from the state of the pd exit transition period to the end of the pd entry transition period. note that in the following figure, it is assumed that there was no refresh command in progress when idle state was entered. transition period for short cke cycles with entry and exit period overlapping (al=0; wl=5; tanpd=wl - 1=4) ck ck t 11 t 10 t 0 t 1 t 3 t 5 t 6 t 7 t 9 t 2 t 4 t 8 t 12 t 13 t 14 tanpd do not care transitioning cke cmd ref nop nop nop nop nop nop nop nop nop nop nop nop nop nop pd exit transition period tanpd txpdll pd entry transition period trfc ( min ) cke short cke high transition period txpdll 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 71 re v 1.0 12 / 200 9 zq calibration commands zq calibration description zq calibration command is used to calibrate dram ron and odt val ues. ddr3 sdram needs longer time to calibrate output driver and on - die termination circuits at initialization and relatively smaller time to perform periodic calibrations. zqcl command is used to perform the initial calibration during power - up initializat ion sequence. this command may be issued at any time by the controller depending on the system environment. zqcl command triggers the calibration engine inside the dram and once calibration is achieved the calibrated values are transferred from calibration engine to dram io which gets reflected as updated output driver and on - die termination values. the first zqcl command issued after reset is allowed a timing period of tzqinit to perform the full calibration and the transfer of values. all other zqcl comma nds except the first zqcl command issued after reset is allowed a timing period of tzqoper. zqcs command is used to perform periodic calibrations to account for voltage and temperature variations. a shorter timing win dow is provided to perform the calibra tion and transfer of values as defined by timing parameter tzqcs. no other activities should be performed on the dram channel by the controller for the duration of tzqinit, tzqoper, or tzqcs. the quiet time on the dram channel allows calibration of output driver and on - die termination values. once dram calibration is achieved, the dram should disable zq current consumption path to reduce power. all banks must be precharged and trp met before zqcl or zqcs commands are issued by the controller. zq calibratio n commands can also be issued in parallel to dll lock time when coming out of self refresh. upon self - refresh exit, ddr3 sdram will not perform an io calibration without an explicit zq calibration command. the earliest possible time for zq calibration comm and (short or long) after self refresh exit is txs. in systems that share the zq resistor between devices, the controller must not allow any overlap of tzqoper, tzqinit, or tzqcs between ranks. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 72 re v 1.0 12 / 200 9 zq calibration timing note: 1. cke must be continuously regi stered high during the calibration procedure. 2. on - die termination must be disabled via the odt signal or mrs during the calibration procedure. 3. all devices connected to the dq bus should be high impedance during the calibration procedure. zq external resistor value, tolerance, and capacitive loading in order to use the zq calibration function, a 240 ohm +/ - 0.1% tolerance external resistor connected between the zq pin and ground. the single resistor can be used for each sdram or one resistor can be sha red between two sdrams if the zq calibra tion timings for each sdram do not overlap. the total capacitive loading on the zq pin must be limited. ck ck tc 2 t 0 t 1 ta 1 ta 3 tb 0 tb 1 tc 1 ta 0 ta 2 tc 0 address cmd zqcl nop nop nop valid valid zqcs nop nop nop valid odt tzqcs valid valid valid valid valid a 10 cke valid valid valid valid valid valid ( 1 ) ( 2 ) ( 1 ) ( 2 ) dq bus hi - z activities hi - z activities tzqcs ( 3 ) ( 3 ) do not care time break 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 73 re v 1.0 12 / 200 9 absolute maximum ratings absolute maximum dc ratings symbol parameter rating units note vdd voltage on vdd p in relative to vss - 0.4 ~ 1.975 v 1,3 vddq voltage on vddq pin relative to vss - 0.4 ~ 1.975 v 1,3 vin, vout voltage on any pin relative to vss - 0.4 ~ 1.975 v 1 tstg storage temperature - 55 ~ 100 ? temperature range symbol parameter rating units notes toper normal operating temperature range 0 to 85 ? c 1,2 extended temperature range 85 to 95 ? c 1,3 note: 1. operating temperature toper is the case surface temperature on the center/top side of the dram. 2. the normal temperature range specifies the temperatures where all dram specification will be supported. during operation, the dram case temperature must be maintained between 0 - 85 ? c under all operating conditions. 3. some applications require operation of the dram in the extended temperature range between 85 ? c and 95 ? c case temperature. full specifications are guaranteed in t his range, but the following additional apply: a) refresh commands must be doubled in frequency, therefore, reducing the refresh interval trefi to 3.9us. it is also possible to specify a component with 1x refresh (trefi to 7.8us) in the extended temperatur e range. b) if self - refresh operation is required in the extended temperature range, then it is mandatory to either use the manual self - refresh mode with extended temperature range capability (mr2 a6=0 and mr2 a7=1) or enable the optional auto self - refres h mode (mr2 a6=1 and mr2 a7=0). 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 74 re v 1.0 12 / 200 9 ac & dc operating conditions recommended dc operating conditions symbol parameter rating unit note min. typ. max. vdd supply voltage 1.425 1.5 1.575 v 1,2 vddq supply voltage for output 1.425 1.5 1.575 v 1,2 not e: 1. under all conditions vddq must be less than or equal to vdd. 2. vddq tracks with vdd. ac parameters are measured with vdd and vddq tied together. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 75 re v 1.0 12 / 200 9 ac & dc input measurement levels ac and dc logic input levels for single - ended signals & command and address symbol parameter ddr3 - 800/1066/1333/1600 unit note min. max. vih.ca(dc 100 ) dc input logic high vref + 0.100 vdd v 1 vil.ca(dc 100 ) dc input logic low vss vref - 0.100 v 1 vih.ca(ac 175 ) ac input logic high vref + 0.175 note2 v 1,2 vil.ca(ac 1 75 ) ac input logic low note2 vref - 0.175 v 1,2 vih.ca(ac150) ac input logic high vref + 0.150 note2 v 1,2 vil.ca(ac150) ac input logic low note2 vref - 0.150 v 1,2 vrefca(dc) reference voltage for add, cmd inputs 0.49 * vdd 0.51 * vdd v 3,4 note: 1. f or input only pins except reset.vref=vrefca(dc) 2. see "overshoot and undershoot specifications" 3. the ac peak noise on vref may not allow vref to deviate from vref(dc) by more than +/ - 0.1% vdd. 4. for reference: approx. vdd/2 +/ - 15mv. 5. to allow vre fca margining, all dram command and address input buffers must use external vref (provided by system) as the input for their vrefca pins. all vih/l input level must be compared with the external vref level at the 1st stage of the command and address input buffer 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 76 re v 1.0 12 / 200 9 ac and dc logic input levels for single - ended signals & dq and dm symbol parameter ddr3 - 800/ 1066 ddr3 - 1333 /1600 unit note min. max. min. max. vih.dq(dc 100 ) dc input logic high vref + 0.100 vdd vref + 0.100 vdd v 1 vil.dq(dc 100 ) dc inp ut logic low vss vref - 0.100 vss vref - 0.100 v 1 vih.dq(ac175) ac input logic high vref + 0.175 note2 vref + 0.150 note2 v 1,2,5 vil.dq(ac175) ac input logic low note2 vref - 0.175 note2 vref - 0.150 v 1,2,5 vih.dq(ac150) ac input logic high vref + 0. 150 note2 vref + 0.150 note2 v 1,2,5 vil.dq(ac150) ac input logic low note2 vref - 0.150 note2 vref - 0.150 v 1,2,5 vrefdq(dc) reference voltage for dq, dm inputs 0.49 * vdd 0.51 * vdd 0.49 * vdd 0.51 * vdd v 3,4 vrefdq _t (dc) reference voltage for train ed dq, dm inputs 0.4 5 * vdd 0.5 5 * vdd 0.4 5 * vdd 0.5 5 * vdd v 3,4 6,7 note: 1. for input only pins except ? ???? . vref = vrefdq(dc) 2. see "overshoot and undershoot specifications" 3. the ac peak noise on vref may not allow vref to deviate from vref(dc) by more than 0.1% vdd. 4. for reference: approx. vdd/2 15mv. 5. single - ended swing requirement for dqs - ??? , is 350mv (peak to peak). differential swing requirement for dqs - ??? , is 700mv (peak to peak) 6. vrefdq training i s performed only during system boot. once the training is completed and an optimal vrefdq_t(dc) voltage level is identified, the optimal vrefdq_t(dc ) voltage level will be used during system runtime. during vrefdq training, vrefdq is swept from 40% of vdd to 60% of vdd to find the optimal vrefdq_t(dc) voltage level; and once the optimal vrefdq_t(dc) is set, it must stay within +/ - 1% of its set value as well as not be less than 45% of vdd or exceed 55% of vdd. vih.dq(ac)min/vil.dq(ac)max = optimal vrefdq_t(dc) +/ - ac level, where "ac level" is the actual ac voltage level per ddr3 speed bins as specified in jesd79 - 3 specification. after vrefdq training is completed and the optimal vrefdq_t(dc) is set, the memory controller provides the dram device a valid write window. through dqs placement optimization and vrefdq centering, the valid write windo w is optimized for both input voltage margin and tds+tdh wi ndow for the dram receiver. the dram device supports the use of the above techniques to optimize the write timing and voltage margin, as long as the technique does not create any dimm failures due to dram input voltage and/or timing spec v iolations as defi ned in jesd79 - 3 specification. 7. to allow vrefdq margining, all dram data input buffers must use external vref (provided by system) as the input for their vrefdq pins. all vih/l input level must be compared with the external vref level at the 1st stage of the data input buffer. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 77 re v 1.0 12 / 200 9 vref tolerances the dc - tolerance limits and ac - moist limits for the reference voltages v refca and v refdq are illustrated in the following figure. it shows a valid reference voltage v ref (t) as a function of time. (v ref stands for v refca and v refdq likewise). v ref (dc) is the linear average of v ref (t) over a very long period of time (e.g.,1 sec). this average has to meet the min/max requirement in previous page. furthermore v ref (t) may temporarily deviate from v ref (dc) by no more tha n 1% vdd. the voltage levels for setup and hold time measurements vih(ac), vih(dc), vil(ac), and vil(dc) are dependent on v ref . v ref shall be understood as v ref (dc). the clarifies that dc - variations of v ref affect the absolute voltage a signal has to re ach to achieve a valid high or low level and therefore the time to which setup and hold is measured. system timing and voltage budgets need to account for v ref (dc) devi ations from the optimum position within the data - eye of the input signals. this also cl arifies that the dram setup/hold specification and de - rating values need to include time and voltage associated with v ref ac - noise. timing and voltage effects due to ac - noise on v ref up to the specified limit ( 1% of vdd) are included in d ram timing and th eir associated de - ratings. illustration of v r ef (dc) tolerance and v r ef ac - noise limits vref ( dc ) vref ( dc ) max vref ( dc ) min vdd / 2 vref ac - noise voltage time vdd vss 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 78 re v 1.0 12 / 200 9 ac and dc logic input levels for differential signals symbol parameter ddr3 - 800, 1066, 1333, & 1600 unit notes min. max. v ihdiff differential input logic high + 0.2 00 n ote3 v 1 v ildiff differential input logic low n ote3 - 0.2 00 v 1 v ihdiff(ac) differential input high ac 2 x ( vih(ac) C vref ) n ote3 v 2 v ildiff(ac) differential input low ac n ote3 2 x ( vref - vil(ac) ) v 2 note: 1. used to define a differential signal slew - rate. 2. for ck - ck use vih/vil(ac) of add/cmd and vrefca; for dqs - dqs, dqsl, dqsl, dqsu, dqsu use vih/vil(ac) of dqs and vrefdq; if a reduced ac - high or ac - low level is used for a signal group, then the reduced level applies also there. 3. these values are not defined, however the single - ended signals ck, ck, dqs, dqs, dqsl, dqsl, dqsu, dqsu need to be within the respective limits (vih(dc)max, vil(dc)min) for single - ended signals as we l l as limitations for overshoot and undershoot. defin ition of differential ac - swing and time above ac - level time d i f f e r e n t i a l i n p u t v o l t a g e ( i . e . d q s C d q s , c k C c k ) tdvac tdvac half cycle vih . diff . ac . min vih . diff. dc min vil . diff . ac . max 0 vil . diff. dc max 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 79 re v 1.0 12 / 200 9 allowed time before ring - back (tdvac) for ck - ?? ??? slew rate [v/ns] tdvac [ps] @ivih/ldiff(ac)i = 350mv tdvac [ps] @ivih/ldiff(ac)i = 300mv min max min max > 4.0 75 - 175 - 4 .0 57 - 170 - 3 .0 50 - 167 - 2 .0 38 - 163 - 1.8 34 - 162 - 1.6 29 - 161 - 1.4 22 - 159 - 1.2 13 - 155 - 1 .0 0 - 150 - < 1.0 0 - 150 - single - ended requirements for differential signals each individual component of a differential signal (ck, dqs, dqsl, dqsu, ?? , ??? , ???? , or ???? ) has also to comply with certain requirements for single - ended signals. ck a nd ?? have to approximately reach vsehmin / vselmax (approximately equal to the ac - levels (vih(ac) / vil(ac)) for add/cmd signals) in every half - cycle. dqs, dqsl, dqsu, dqs, dqsl, dqsl have to reach vsehmin / vselmax (approxi mately the ac - levels (vih(ac) / vil(ac)) for dq signals) in every half - cycle proceeding and following a valid transition. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 80 re v 1.0 12 / 200 9 single - ended levels for ck, dqs, dqsl, dqsu, ?? ??? ???? ???? ? symbol parameter ddr3 - 800, 1066, 1333, & 1600 unit notes min max vseh single - ended high - level for strobes (vddq/2) + 0.175 note3 v 1, 2 single - ended high - level for ck, ck (vddq/2) + 0.175 note3 v 1, 2 vsel single - ended low - level for strobes note3 (vddq/2) - 0.175 v 1, 2 single - ended low - level for ck, ck note3 (vddq/2) - 0.175 v 1, 2 not e: 1. for ck, ck use vih/vil(ac) of add/cmd; for strobes (dqs, dqsl, dqsu, ck, dqs, dqsl, or dqsu) use vih/vil(ac) of dqs. 2. vih(ac)/vil(ac) for dqs is based on vrefdq; vih(ac)/vil(ac) for add/cmd is based on vrefca; if a reduced ac - high or ac - low level is used for a signal group, then the reduced level applies also there. 3. these values are not defined, however the single - ended signals ck, ck, dqs, dqs, dqsl, dqsl, dqsu, dqsu need to be within the respective limits (vih(dc)max, vil(dc)min) for single - en ded signals as well as limitations for overshoot and undershoot. differential input cross point voltage to guarantee tight setup and hold times as well as output skew parameters with respect to clock and strobe, each cross point voltage of differential input signals (ck, ck and dqs, dqs) must meet the requirements in the following table. the differential input cross point voltage vix is measured from the actual cross point of true and completement signal to the midlevel between of vdd and vss. vix defini tion 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 81 re v 1.0 12 / 200 9 cross point voltage for differential input signals (ck, dqs) symbol parameter ddr3 - 800, 1066, 1333, & 1600 unit note min. max. vix differential input cross point voltage relative to vdd/2 for ck, ck - 150 150 mv - 175 175 mv 1 differential input cross point voltage relative to vdd/2 for dqs, dqs - 150 150 mv note1: extended range for vix is only allowed for clock and if single - ended clock input signals ck and ?? are monotonic with a single - ended swing vsel / vseh of at least vdd/2 250mv, and when the differential slew rate of ck - ?? is larger than 3v/ns. slew rate definition for differential input signals differential input slew rate definition description measured defined by from to differential i nput slew rate for rising edge (ck - ?? & dqs - ??? ) vildiffmax vihdiffmin [vihdiffmin - vildiffmax] / deltatrdiff differential input slew rate for falling edge (ck - ?? & dqs - ??? ) vihdiffmin vildiffmax [vihdiffmin - vildiffmax] / deltatfdiff the differential sign al (i.e., ck - ?? & dqs - ??? ) must be linear between these thresholds. input nominal slew rate definition for single ended signals delta tfdiff delta trdiff vihdiffmin vildiffmax 0 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 82 re v 1.0 12 / 200 9 ac and dc output measurement levels single ended ac and dc output levels symbol parameter value unit notes voh(dc) dc o utput high measurement level (for iv curve linearity) 0.8xvddq v vom(dc) dc output mid measurement level (for iv curve linearity) 0.5xvddq v vol(dc) dc output low measurement level (fro iv curve linearity) 0.2xvddq v voh(ac) ac output high measure ment level (for output sr) vtt+0.1xvddq v 1 vol(ac) ac output low measurement level (for output sr) vtt - 0.1xvddq v 1 note: 1. the swing of 0.1 x vddq is based on approximately 50% of the static single ended output high or low swing with a driver impeda nce of 40 ? and an effective test load of 25 ? to vtt = vddq/2. differential ac and dc output levels symbol parameter ddr3 unit notes vohdiff(ac) ac differential output high measurement level (for output sr) +0.2 x vddq v 1 voldiff(ac) ac differential output low measurement level (for output sr) - 0.2 x vddq v 1 note: 1. the swing of 0.2 x vddq is based on approximately 50% of the static differential output high or low swing with a driver impedance of 40 ? and an effective test load of 25 ? to vtt=vddq/2 at ea ch of the differential outputs. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 83 re v 1.0 12 / 200 9 single ended output slew rate description measured defined by from to single ended output slew rate for rising edge vol(ac) voh(ac) [voh(ac) - vol(ac)] / deltatrse single ended output slew rate for falling edge voh (ac) vol(ac) [voh(ac) - vol(ac)] / deltatfse note: output slew rate is verified by design and characterization, and may not be subject to production test. single ended output slew rate definition output slew rate (single - ended) parameter symbol ddr3 - 800 ddr3 - 1066 ddr3 - 1333 ddr3 - 1600 unit min. max. min. max. max. max. max. max. single - ended output slew rate srqse 2.5 5 2.5 5 2.5 5 tbd 5 v/ns note: sr: slew rate. q: query output (like in dq, which stands for data - in, query - output). se: sing le - ended signals. for ron = rzq/7 setting. delta tfse delta trse voh ( ac ) vol ( ac ) vtt 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 84 re v 1.0 12 / 200 9 differential output slew rate description measured defined by from to differential output slew rate for rising edge voldiff(ac) vohdiff(ac) [vohdiff(ac) - voldiff(ac)] / deltatrdiff differential out put slew rate for falling edge vohdiff(ac) voldiff(ac) [vohdiff(ac) - voldiff(ac)] / deltatfdiff note: output slew rate is verified by design and characterization, and may not be subject to production test. differential output slew rate definition diff erential output slew rate parameter symbol ddr3 - 800 ddr3 - 1066 ddr3 - 1333 ddr3 - 1600 unit min. max. min. max. max. max. max. max. single - ended output slew rate srqse 5 10 5 10 5 10 tbd 10 v/ns note: sr: slew rate. q: query output (like in dq, w hich stands for data - in, query - output). diff : differential signals. for ron = rzq/7 setting. delta tfdiff delta trdiff vohdiff ( ac ) voldiff ( ac ) 0 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 85 re v 1.0 12 / 200 9 reference load for ac timing and output slew rate the following figure represents the effective reference load of 25 ohms used in defining the relevant a c timing parameters of the device as well as output slew rate measurements. it is not intended as a precise representation of any particular system environment or a depiction of the actual load presented by a production tester. system designers should use ibis or other simulation tools to correlate the timing reference load to a sys tem environment. manufacturers correlate to their production test conditions, generally one or more coaxial transmission lines terminated at the tester electronics. 25 ohm vtt = vddq / 2 ck, ck dut timing reference points vddq dq dqs dqs rdqs rdqs 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 86 re v 1.0 12 / 200 9 overshoot and undershoot specifications ac overshoot/undershoot specification for address and control pins item ddr3 - 800 ddr3 - 1066 ddr3 - 1333 ddr3 - 1600 units maximum peak amplitude allowed for overshoot area 0.4 0.4 0.4 0.4 v maximum peak amplitude allowed for unde rshoot area 0.4 0.4 0.4 0.4 v maximum overshoot area above vdd 0.67 0.5 0.4 0.33 v - ns maximum undershoot area below vss 0.67 0.5 0.4 0.33 v - ns (a0 - a15, ba0 - ba3, ?? , ??? , ??? , ?? , cke, odt) ac overshoot/undershoot specification for clock, da ta, strobe, and mask item ddr3 - 800 ddr3 - 1066 ddr3 - 1333 ddr3 - 1600 units maximum peak amplitude allowed for overshoot area 0.4 0.4 0.4 0.4 v maximum peak amplitude allowed for undershoot area 0.4 0.4 0.4 0.4 v maximum overshoot area above vdd 0.25 0.19 0. 15 0.13 v - ns maximum undershoot area below vss 0.25 0.19 0.15 0.13 v - ns (ck, ?? , dq, dqs, ??? , dm) v d d v s s o v e r s h o o t a r e a u n d e r s h o o t a r e a m a x i m u m a m p l i t u d e m a x i m u m a m p l i t u d e t i m e ( n s ) v o l t s ( v ) v d d q v s s q o v e r s h o o t a r e a u n d e r s h o o t a r e a m a x i m u m a m p l i t u d e m a x i m u m a m p l i t u d e t i m e ( n s ) v o l t s ( v ) 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 87 re v 1.0 12 / 200 9 34 ohm output driver dc electrical characteristics a functional representation of the output buffer is shown as below. output driver impedance ron is defined by the value of the external reference resistor rzq as follow s: ron 34 = r zq / 7 (nominal 34.4ohms +/ - 10% with nominal r zq =240ohms) the individual pull - up and pull - down resistors (ron pu and ron pd ) are defined as follows: ron pu = [vddq - vout] / l iout l ------------------- under the condition that ron pd is turned off ( 1) ron pd = vout / i iout i ------------------------------- under the condition that ron pu is turned off (2) output driver dc electrical characteristics, assuming r zq = 240ohms; entire operating temperature range; after proper zq calibration ron nom resistor vout min nom max unit notes 34 ohms ron 34pd voldc = 0.2 x vddq 0.6 1 1.1 r zq / 7 1,2,3 vomdc = 0.5 x vddq 0.9 1 1.1 r zq / 7 1,2,3 vohdc = 0.8 x vddq 0.9 1 1.4 r zq / 7 1,2,3 ron 34pu voldc = 0.2 x vddq 0.9 1 1.4 r zq / 7 1,2,3 vomdc = 0.5 x vddq 0.9 1 1.1 r zq / 7 1,2,3 vohdc = 0.8 x vddq 0.6 1 1.1 r zq / 7 1,2,3 mismatch between pull - up and pull - down, mmpupd vomdc = 0.5 x vddq - 10 + 10 % 1,2,4 note: 1. the tolerance limits are specified after calibration with stable voltage and temperature. for the behavior of the toleranc e limits if temperature or voltage changes after calibration, see following section on voltage and temperatur e sensitivity. 2. the tolerance limits are specified under the condition that vddq = vdd and that vssq = vss. 3. pull - down and pull - up output driver impedances are recommended to be calibrated at 0.5 x vddq. other calibration schemes may be used to achieve the linearity spec shown above. e.g. calibration at 0.2 x vddq and 0.8 x vddq. 4. measurement definition for mismatch between pull - up and pull - down, mmpupd: measure ronpu and ronpd, but at 0.5 x vddq: mmpupd = [ronpu - ronpd] / ronnom x 100 to other circuitry like rcv , ... ron ron pu pd i pu i pd vddq vssq dq i out v out output driver chip in drive mode 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 88 re v 1.0 12 / 200 9 output drive r temperature and voltage sensitivity if temperature and/or voltage after calibration, the tolerance limits widen according to the following table. delta t = t - t(@calibration); delta v = vddq - vddq(@calibration); vdd = vddq note: dr on dt and dr on dv are n ot subject to production test but are verified by design and characterization. items m in . m ax . unit ronpu@vohdc 0.6 - dr on dth*ldelta tl - dr on dvh*ldelta vl 1.1 + dr on dth*ldelta tl - dr on dvh*ldelta vl r zq /7 ron@vomdc 0.9 - dr on dtm*ldelta tl - dr on dvm*ldel ta vl 1.1 + dr on dtm*ldelta tl - dr on dvm*ldelta vl r zq /7 ronpd@voldc 0.6 - dr on dtl*ldelta tl - dr on dvl*ldelta vl 1.1 + dr on dtl*ldelta tl - dr on dvl*ldelta vl r zq /7 output driver voltage and temperature sensitivity speed bin ddr3 - 800/1066/1333 ddr3 - 1600 un it items m in . m ax m in . m ax drondtm 0 1.5 0 1.5 %/ ? c drondvm 0 0.15 0 0.1 3 %/mv drondtl 0 1.5 0 1.5 %/ ? c drondvl 0 0.15 0 0.13 %/mv drondth 0 1.5 0 1.5 %/ ? c drondvh 0 0.15 0 0.13 %/mv note: these parameters may not be subject to production test. th ey are verified by design and characterization. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 89 re v 1.0 12 / 200 9 on - die termination (odt) levels and i - v characteristics on - die termination effective resistance rtt is defined by bits a9, a6, and a2 of the mr1 register. odt is applied to the dq, dm, dqs/dqs, and tdqs/td qs (x8 devices only) pins. a functional representation of the on - die termination is shown in the following figure. the individual pull - up and pull - down resistors (rtt pu and rtt pd ) are defined as follows: rtt pu = [vddq - vout] / i iout i ------------------ under the condition that rtt pd is turned off (3) rtt pd = vout / i iout i ------------------------------ under the condition that rtt pu is turned off (4) odt dc electrical characteristics the following table provides an overview of the odt d c electrical characteristics. the values for rtt 60pd120 , rtt 60pu120 , rtt 120pd240 , rtt 120pu240 , rtt 40pd80 , rtt 40pu80 , rtt 30pd60 , rtt 30pu60 , rtt 20pd40 , rtt 20pu40 are not specification requirements, but can be used as design guide lines: to other circuitry like rcv , ... rtt rtt pu pd i pu i pd vddq vssq dq i out v out odt chip in termination mode i = i - i out pd pu 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 90 re v 1.0 12 / 200 9 odt dc electrical c haracteristics, assuming r zq = 240ohms +/ - 1% entire operating temperature range; after proper zq calibration mr1 a9, a6, a2 rtt resistor vout min nom max unit notes 0,1,0 120 ? rtt 120pd240 voldc = 0.2 x vddq 0.6 1 1.1 r zq 1,2,3,4 0.5 x vddq 0.9 1 1.1 r zq 1,2,3,4 vohdc = 0.8 x vddq 0.9 1 1.4 r zq 1,2,3,4 rtt 120pu240 voldc = 0.2 x vddq 0.9 1 1.4 r zq 1,2,3,4 0.5 x vddq 0.9 1 1,1 r zq 1,2,3,4 vohdc = 0.8 x vddq 0.6 1 1.1 r zq 1,2,3,4 rtt 120 vil(ac) to vih(ac) 0.9 1 1.6 r zq /2 1,2,5 0, 0, 1 60 ? rtt 60pd120 voldc = 0.2 x vddq 0.6 1 1.1 r zq /2 1,2,3,4 0.5 x vddq 0.9 1 1.1 r zq /2 1,2,3,4 vohdc = 0.8 x vddq 0.9 1 1.4 r zq /2 1,2,3,4 rtt 60pu120 voldc = 0.2 x vddq 0.9 1 1.4 r zq /2 1,2,3,4 0.5 x vddq 0.9 1 1.1 r zq /2 1,2,3,4 vohdc = 0.8 x vddq 0.6 1 1.1 r zq /2 1,2,3,4 rtt 60 vil(ac) to vih(ac) 0.9 1 1.6 r zq /4 1,2,5 0, 1, 1 40 ? rtt 40pd80 voldc = 0.2 x vddq 0.6 1 1.1 r zq /3 1,2,3,4 0.5 x vddq 0.9 1 1.1 r zq /3 1,2,3,4 vohdc = 0.8 x vddq 0.9 1 1.4 r zq /3 1,2,3,4 rtt40pu80 voldc = 0.2 x vddq 0.9 1 1.4 r zq /3 1,2,3,4 0.5 x vddq 0.9 1 1.1 r zq /3 1,2,3,4 vohdc = 0.8 x vddq 0.6 1 1.1 r zq /3 1,2,3,4 rtt40 vil(ac) to vih(ac) 0.9 1 1.6 r zq /6 1,2,5 1, 0, 1 30 ? rtt30pd60 voldc = 0.2 x vddq 0.6 1 1.1 r zq /4 1,2,3,4 0.5 x vddq 0.9 1 1. 1 r zq /4 1,2,3,4 vohdc = 0.8 x vddq 0.9 1 1.4 r zq /4 1,2,3,4 rtt30pu60 voldc = 0.2 x vddq 0.9 1 1.4 r zq /4 1,2,3,4 0.5 x vddq 0.9 1 1.1 r zq /4 1,2,3,4 vohdc = 0.8 x vddq 0.6 1 1.1 r zq /4 1,2,3,4 rtt30 vil(ac) to vih(ac) 0.9 1 1.6 r zq /8 1,2,5 1, 0, 0 20 ? rtt20pd40 voldc = 0.2 x vddq 0.6 1 1.1 r zq /6 1,2,3,4 0.5 x vddq 0.9 1 1.1 r zq /6 1,2,3,4 vohdc = 0.8 x vddq 0.9 1 1.4 r zq /6 1,2,3,4 rtt20pu40 voldc = 0.2 x vddq 0.9 1 1.4 r zq /6 1,2,3,4 0.5 x vddq 0.9 1 1.1 r zq /6 1,2,3,4 vohdc = 0.8 x vd dq 0.6 1 1.1 r zq /6 1,2,3,4 rtt20 vil(ac) to vih(ac) 0.9 1 1.6 r zq /12 1,2,5 deviation of vm w.r.t. vddq/2, dvm - 5 + 5 % 1,2,5,6 note: 1. the tolerance limits are specified after calibration with stable voltage and temperature. for the behavior of the tolerance limits if tempera ture or voltage changes after calibration, see following section on voltage and temperature sensitivity. 2. the tolerance limits are specified under the condition that vddq = vdd and that vssq = vss. 3. pull - down and pull - up od t resistors are recommended to be calibrated at 0.5 x vddq. other calibration may be used to achieve the lin earity spec shown above. 4. not a specification requirement, but a design guide line. 5. measurement definition for rtt: apply vih(ac) to pin under test and measure current / (vih(ac)), then apply vil(ac) to pin under test and measure current / (vil(ac)) respec tively. rtt = [vih(ac) - vil(ac)] / [i(vih(ac)) - i(vil(ac))] 6. measurement definition for v m and dv m : measure voltage (v m ) at test pin (mid point) with no lead: delta v m = [2v m / vddq - 1] x 100 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 91 re v 1.0 12 / 200 9 odt temperature and voltage sensitivity if temperature and/or voltage after calibration, the tolerance limits widen according to the following table. delta t = t - t(@calibration); delta v = vddq - vddq(@calibration); vdd = vddq odt sensitivity defini tion min max unit rtt 0.9 - drttdt*ldelta tl - drttdv*ldelta vl 1.6 + drttdt*ldelta tl + drttdv*ldelta vl rzq/2,4,6,8,12 odt voltage and temperature sensitivity min max unit drttdt 0 1.5 %/ ? c drttdv 0 0.15 %/mv note: these parameters may not be su bject to production test. they are verified by design and characterization. test load for odt timings different than for timing measurements, the reference load for odt timings is defined in the following figure. odt timing definitions definitions for t aon , t aonpd , t aof , t aofpd , and t adc are provided in the following table and subsequent figures. symbol begin point definition end point definition taon rising edge of ck - ck defined by the end point of odtlon extrapolated point at vssq taonpd rising e dge of ck - ck with odt being first registered high extrapolated point at vssq taof rising edge of ck - ck defined by the end point of odtloff end point: extrapolated point at vrtt_nom taofpd rising edge of ck - ck with odt being first registered low end point: extrapolated point at vrtt_nom tadc rising edge of ck - ck defined by the end point of odtlcnw, odtlcwn4, or odtlcwn8 end point: extrapolated point at vrtt_wr and vrtt_nom respectively 25ohm vtt = vssq dut timing reference points vddq dq dqs dqs rdqs rdqs vssq 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 92 re v 1.0 12 / 200 9 reference settings for odt timing measurements measured param eter rtt_nom setting rtt_wr setting vsw1[v] vsw2[v] note taon rzq/4 na 0.05 0.1 0 rzq/12 na 0.1 0 0.2 0 taonpd rzq/4 na 0.05 0.1 0 rzq/12 na 0.1 0 0.2 0 taof rzq/4 na 0.05 0.1 0 rzq/12 na 0.1 0 0.2 0 taofpd rzq/4 na 0.05 0.1 0 rzq/12 na 0.1 0 0.2 0 tadc rzq/12 rzq/2 0.2 0 0.3 0 definition of t aon definition of t aonpd taon tsw 2 tsw 1 vsw 1 vsw 2 vssq vtt dq , dm dqs , dqs # tdqs , tdqs # end point : extrapolated point at vssq ck ck # begin point : rising edge of ck C ck # defined by the end point of odtlon taonpd tsw 2 tsw 1 vsw 1 vsw 2 vssq vtt dq , dm dqs , dqs # tdqs , tdqs # end point : extrapolated point at vssq ck ck # begin point : rising edge of ck C ck # with odt being first register high 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 93 re v 1.0 12 / 200 9 definition of t aof definition of t aofpd definition of t adc taof tsw 2 tsw 1 vsw 1 vsw 2 vssq vtt dq , dm dqs , dqs # tdqs , tdqs # end point : extrapolated point at vrtt _ nom ck ck # begin point : rising edge of ck C ck # defined by the end point of odtloff vrtt _ nom taofpd tsw 2 tsw 1 vsw 1 vsw 2 vssq vtt dq , dm dqs , dqs # tdqs , tdqs # end point : extrapolated point at vrtt _ nom ck ck # begin point : rising edge of ck C ck # with odt being first registered low vrtt _ nom tadc tsw 21 tsw 11 vsw 1 vsw 2 dq , dm dqs , dqs # tdqs , tdqs # end point : extrapolated point at vrtt _ nom ck ck # begin point : rising edge of ck C ck # defined by the end of odtlcnw vrtt _ nom tadc tsw 22 tsw 12 vssq vtt end point : extrapolated point at vrtt _ wr ck ck # begin point : rising edge of ck C ck # defined by the end of odtlcwn 4 or odtlcwn 8 vrtt _ wr vrtt _ nom 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 94 re v 1.0 12 / 200 9 input / output capacitance symbol parameter ddr3 - 800 ddr3 - 1066 ddr3 - 1333 ddr3 - 1600 units notes min. max min. ma x min. max min. max c io input/output capacitance (dq, dm, dqs, ??? , tdqs, ???? ) 1.50 3.00 1.50 3.00 1.50 2.50 1.50 2.30 pf 1,2,3 c ck input capacitance, ck and ck 0.80 1.60 0.80 1.60 0.80 1.40 0.80 1.40 pf 2,3 c dck input capacitance del ta, ck and ?? 0.00 0.15 0.00 0.15 0.00 0.15 0.00 0.15 pf 2,3,4 c ddqs input/output capacitance delta, dqs and ??? 0.00 0.20 0.00 0.20 0.00 0.15 0.00 0.15 pf 2,3,5 c i input capacitance, ctrl, add, cmd input - only pins 0.75 1.40 0.75 1.35 0.75 1.30 0.75 1.30 pf 2,3,7,8 c di_ctrl input capacitance delta, all ctrl input - only pins - 0.50 0.30 - 0.50 0.30 - 0.40 0.20 - 0.40 0.20 pf 2,3,7,8 c di_add_cmd input capacitance delta, all add/cmd input - only pins - 0.50 0.50 - 0.50 0.50 - 0.4 0 0.40 - 0.40 0.40 pf 2,3,9,10 c dio input/output capacitance delta, dq, dm, dqs, ??? , tdqs, ???? - 0.50 0.30 - 0.50 0.30 - 0.50 0.30 - 0.50 0.30 pf 2,3,11 c zq input/output capacitance of zq pin - 3.00 - 3.00 - 3.00 - 3.00 pf 2,3,12 1. although the dm, tdqs and tdqs pins have different functions, the loading matches dq and dqs 2. this parameter is not subject to production test. it is verified by design and characterization. vdd=vddq=1.5v, vbias=vdd/ 2 and on - die termination off. 3. this parameter applies to monolithic devices only; stacked/dual - die devices are not cove red here 4. absolute value of cck - cck 5. absolute value of cio(dqs) - cio(dqs) 6. ci applies to odt, ?? , cke, a0 - a13, ba0 - ba2, ??? , ??? , ?? . 7. cdi_ctrl applies to odt, ?? and cke 8. cdi_ctrl=ci(ctrl) - 0.5*(ci(clk)+ci(clk)) 9. cdi_add_cmd applies to a0 - a13, ba0 - ba2, ??? , ??? and ?? 10. cdi_add_cmd=ci(add_cmd) - 0.5*(ci(clk)+ci( ??? )) 11. cdio=cio(dq,dm) - 0.5*(cio(dqs)+cio ???? )) 12. maximum external load capacitance on zq pin: 5 pf. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 95 re v 1.0 12 / 200 9 dd specifications and measurement conditions idd specifications symbol parameter/condition i/o ddr3 - 800 ( - ac/ - ad ) ddr3 - 1066 ( - be / - bf ) ddr3 - 1333 ( - cf/ - cg ) ddr3 - 1 600 ( - dg/ - dh ) unit idd0 operating current 0 - > one bank activate - > precharge x4/x8 65 /90 75 /100 85 /110 tbd ma idd1 operating current 1 - > one bank activate - > read - > precharge x4/x8 85 /110 95 /120 105 /130 tbd ma idd2p(0) precharge power - down current slow exit - mr0 bit a12 = 0 x4/x8 12 /12 12 /12 12 /12 tbd ma idd2p(1) precharge power - down current fast exit - mr0 bit a12 = 1 x4/x8 25 /25 25 /25 30 /30 tbd ma idd2n precharge standby current x4/x8 50 /50 55 /55 60 /60 tbd ma idd2q precharge quiet standby cu rrent x4/x8 45 /45 50 /50 55 /55 tbd ma idd3p active power - down current always fast exit x4/x8 25 /25 30 /30 35 /35 tbd ma idd3n active standby current x4/x8 50 /50 55 /55 60 /60 tbd ma idd4r operating current burst read x4/x8 130 /130 160 /160 200 /200 tbd ma idd 4w operating current burst write x4/x8 130 /130 160 /160 190 /190 tbd ma idd5b burst refresh current x4/x8 200 /200 220 /220 240 /240 tbd ma idd6 self - refresh current normal temperature range (0 - 85 ? c) x4/x8 10 /10 10 /10 10 /10 tbd ma idd7 all bank interleave re ad current x4/x8 230/350 250/390 315 /490 tbd ma 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 96 re v 1.0 12 / 200 9 i dd measurement conditions symbol parameter/condition idd0 operating current - one bank active - precharge current cke: high; external clock: on; tck, trc, tras: see table in the next page; cs: high betw een act and pre; command inputs: switching 1 (except for act and pre); row, column address, data i/o: switching1 (a10 low permanently); bank address: fixed (bank 0); output buffer: off 2 ; odt: disabled 3 ; active banks: one (act - pre loop); idle banks: all ot her; pattern example: a0 d dd dd dd dd dd dd d p0 4 (ddr3 - 800: tras=37.5ns) idd1 operating one bank active - read - precharge current cke: high; external clock: on; tck, trc, tras, trcd, cl, al: see table in the next page; cs: high between act, rd, and pre; c o mmand inputs: switching 1 (except act, rd, and pre commands); row, column address: switching1 (a10 low permanently); bank address: fixed (bank 0); data i/o: switching e very clock (rd data stable during one clock cycle); floating when no burst activity; outp ut buffer: off 2 ; odt: disabled 3 ; burst length: bl85; active banks: one (act - rd - pre loop); idle banks: all other; pattern example: a0 d dd d r0 dd dd dd dd d p0 4 (ddr3 - 800 - 5 - 5 - 5: trcd=12.5ns). idd2n precharge standby current cke=high; external clock=on; t ck: see table in the next page; cs: high; command inputs, row, column, bank address, data i/o: switching 1 ; output buffer: off 2 ; odt: disabled 3 ; active / idle banks: none / all. idd2p(0) precharge power - down current - (slow exit) cke=low; external clock= on; tck: see table in the next page; cs: stable; command inputs: stable; row, column / bank address: stable; data i/o: floati ng; output buffer: off 2 ; odt: disabled 3 ; active / idle banks: none / all. precharge power down mode: slow exit 6 (rd and odt must s atisfy txpdll - al) idd2p(1) precharge power - down current - (fast exit) cke=low; external clock=on; tck: see table in the next page; cs: stable; command inputs, row, column, bank address: stable; d ata i/o: floating; output buffer: off 2 ; odt: disabled 3 ; a ctive / idle banks: none / all. precharge power down mode: fast exit 6(any valid command after txp) 7 idd2q precharge quiet standby current cke=high; external clock=on; tck: see table in the next page; cs=high; command inputs, row, column, bank address: st able; data i/o: floating; output buffer: off2; odt: disabled 3 ; active / idle banks: none / all. idd3n active standby current cke=high; external clock=on; tck: see table in the next page; cs=high; command inputs, row, column, bank address, data i/o: s wit ching 1 ; output buffer: off2; odt: disabled 3 ; active / idle banks: all / none. idd3p active power - down current cke=low; external clock=on; tck: see table in the next page; cs, command inputs, row, column, bank address: stable; data i/o: floating; output b uffer: off2; odt: disabled 3 ; active / idle banks: all / none. idd4r operating burst read current cke=high; external clock=on; tck, cl: see table in the next page; al: 0; cs: high between valid commands; command inputs: swi tching 1 (except rd commands); row , column address: switching 1 (a10: low permanently); bank address: cycling 10 ; data i/o: seamless read data burst : output data switches every clock cycle (i.e. data stable during one clock cycle); output buffer: off 2 ; odt: disabled 3 ; burst length: bl8 5 ; ac tive / idle banks: all / none 10 ; pattern: r0 d dd r1 d dd r2 d dd r3 d dd r4 4 idd4w operating burst write current cke=high; external clock=on; tck, cl: see table in the next page; al: 0; cs: high between valid commands; command inputs: swi tching 1 (except w r commands); row, column address: switching 1 (a10: low permanently); bank address: cycling 10 ; data i/o: seamless write data burst : input data switches every clock cycle (i.e. data stable during one clock cycle); dm: l permanently; output buffer: off 2 ; odt: disabled 3 ; burst length: bl8 5 ; active / idle banks: all / none 10 ; pattern: w0 d dd w1 d dd w2 d dd w3 d dd w4 4 idd5b burst refresh current cke=high; external clock=on; tck, trfc: see table in the next page; cs: high between valid commands; command input s, row, column, bank addresses, data i/o: switching 1 ; output buffer: off 2 ; odt: disabled 3 ; active banks: refresh command every trfc=trfc(idd); idle banks: none. idd6 self - refresh current tcase=0 - 85 ? c; auto self refresh =disable; self refresh temperature range=normal 9 ; cke=low; external clock=off (ck and ck: low); cs, command inputs, row, column address, bank address, data i/o: floating; output buffer: off 2 ; odt: disabled 3 ; active banks: all (during self - refresh action); idle banks: all (between self - re refresh actions) idd6et self - refresh current: extended temperature range tcase=0 - 95 ? c; auto self refresh =disable; self refresh temperature range=extended 9 ; cke=low; external clock=off (ck and ck: low); cs, command inputs, row, column address, bank addres s, data i/o: floating; output buffer: off 2 ; odt: disabled 3 ; active banks: all (during self - refresh action); idle banks: all (between self - rerefresh actions) idd6tc auto self - refresh current tcase=0 - 95 ? c; auto self refresh =enable 8 ; self refresh temperat ure range=normal 9 ; cke=low; external clock=off (ck and ck: low); cs, command inputs, row, column address, bank address, data i/o: floating; output buffer: off 2 ; odt: disabled 3 ; active banks: all (during self - refresh action); idle banks: all (between self - rerefresh actions) idd7 operating bank interleave read current cke=high; external clock=on; tck, trc, tras, trcd, trrd, cl: see table as below; al=trcd.min - tck; cs=high between valid commands; command input: see table; row, column address: stable during deselect; bank address: cycling 10 ; data i/o: read data: output data switches every clock cycle (i.e. data stable during one clock cycle); output buffer: off 2 ;odt: disabled 3 ; burst length: bl8; active / idle banks: all 10 / none. note1: switching for ad dress and command input signals as described in definition of switching for address and command input signals table. note2: output buffer off: set mr1 a[12] = 1 note3: odt disable: set mr1 a[9,6,2]=000 and mr2 a[10,9]=00 note4: definition of d and d: descr ibed in definition of switching for address and command input signals table; ax/rx/wx: activate/read/write to bank x. note5: bl8 fixed by mrs: set mr0 a[1,0]=00 note6: precharge power down mode: set mr0 a12=0/1 for slow/fast exit note7: because it is an ex it after precharge power down, the valid commands are: act, ref, mrs, enter self - refresh. note8: auto self - refresh(asr): set mr2 a6 = 0/1 to disable/enable feature note9: self - refresh temperature range (srt): set mr2 a7 = 0/1 for normal/extended temperatur e range note10: cycle banks as follows: 0,1,2,3,...,7,0,1,... 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 97 re v 1.0 12 / 200 9 for id testing the following parameters are utilized. for testing the idd parameters, the following timing parameters are used : parameter symbol ddr3 - 800 ddr3 - 1066 ddr3 - 1333 ddr3 - 1600 unit ( - ac) ( - ad) ( - be) ( - bf) ( - cf) ( - cg) ( - dg) ( - dh) - 5 - 5 - 5 - 6 - 6 - 6 - 7 - 7 - 7 - 8 - 8 - 8 - 8 - 8 - 8 - 9 - 9 - 9 - 9 - 9 - 9 - 10 - 10 - 10 clock cycle time tckmin(idd) 2.5 2.5 1.875 1.875 1.5 1.5 1.25 1.25 ns cas latency cl(idd) 5 6 7 8 8 9 9 10 nck active to read or write dela y trcdmin(idd) 12.5 15 13.125 15 12 13.5 11.25 12.5 ns active to active / auto - refresh command period trcmin(idd) 50 52.5 50.63 52.5 48 49.5 46.25 47.5 ns active to precharge command trasmin(idd) 37.5 37.5 37.5 37.5 36 36 28 28 ns precharge command peri od trpmin(idd) 12.5 15 13.13 15 12 13.5 9 10 ns four activate window x4/x8 tfaw(idd) 40 40 37.5 37.5 30 30 30 30 ns - - - - - - - - - active to active command period x4/x8 trrd(idd) 10 10 7.5 7.5 6 6 6.25 6.25 ns - - - - - - - - - auto - refresh to active / auto - refresh command period trfc(idd) 110 110 111 111 111 111 110 110 ns definition of switching for ad dress and command input signals switching for address (row, column) and command signals (cs, ras, cas, we) is defined as: address (row, column) if not otherwise mentioned the inputs are stable at high or low during 4 clocks and change then to the opposi te value (e.g. ax ax ax ax ?? ?? ?? ?? ax ax ax ax please see each iddx definition for details bank address if not otherwise mentioned the bank addresses should be switched like the row/column address - please see each iddx for details command ( ?? , ??? , ??? , ?? ) define d = { ?? , ? ?? , ??? , ?? } := {high, low, low, low} define d = { ??? , ??? , ??? , ?? } := {high, high, high, high} define command background pattern = d d ? ? d d ? ? d d ? ? .... if other commands are necessary (e.g. act for idd0 or read for idd4r), the background pattern command is substituted by the respective ?? , ??? , ??? , ?? levels of the necessary command. see e ach iddx definition for details . 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 98 re v 1.0 12 / 200 9 standard speed bins ddr3 - 800mhz speed bin ddr3 - 800 unit cl - nrcd - nrp 5 - 5 - 5 ( - ac) 6 - 6 - 6 ( - ad) parameter symbol min max mi n max internal read command to first data taa 12.500 20.000 15.000 20.000 ns act to internal read or write delay time trcd 12.500 - 15.000 - ns pre command period trp 12.500 - 15.000 - ns act to act or ref command period trc 50.000 - 52.200 - ns act to pre command period tras 37.500 9*trefi 37.500 9*trefi ns cl=5 cwl =5 tck(avg) 2.500 3.300 3.000 3.300 ns cl=6 cwl =5 tck(avg) 2.500 3.300 2.500 3.300 ns supported cl settings 5,6 6 nck supported cwl settings 5 5 nck ddr3 - 1066 mh z speed bin ddr3 - 1066 unit cl - nrcd - nrp 7 - 7 - 7 ( - be) 8 - 8 - 8 ( - bf) parameter symbol min max min max. internal read command to first data taa 13.125 20.000 15.000 20.000 ns act to internal read or write delay time trcd 13.125 - 15.000 - ns pre comm and period trp 13.125 - 15.000 - ns act to act or ref command period trc 50.625 - 52.500 - ns act to pre command period tras 37.500 9*trefi 37.500 9*trefi ns cl=5 cwl=5 tck(avg) 3.000 3.300 3.000 3.300 ns cwl=6 tck(avg) reserved reserved ns cl=6 cwl=5 tck(avg) 2.500 3.300 2.500 3.300 ns cwl=6 tck(avg) reserved reserved ns cl=7 cwl=5 tck(avg) reserved reserved ns cwl=6 tck(avg) 1.875 <2.5 reserved ns cl=8 cwl=5 reserved reserved ns cwl=6 tck(avg) 1.875 <2.5 1.875 <2.5 ns supp orted cl settings 5, 6,7,8 5, 6,8 nck supported cwl settings 5,6 5,6 nck 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 99 re v 1.0 12 / 200 9 ddr3 - 1333mhz speed bin ddr3 - 1333 unit cl - nrcd - nrp 8 - 8 - 8 ( - cf) 9 - 9 - 9 ( - cg) parameter symbol min max min max internal read command to first data taa 12.000 20.000 13.500 20.000 ns act to internal read or write delay time trcd 12.000 - 13.500 - ns pre command period trp 12.000 - 13.500 - ns act to act or ref command period trc 48.000 - 49.500 - ns act to pre command period tras 36.000 9*trefi 36.000 9*trefi ns cl=5 cwl=5 tck(avg) 2.500 3.300 3.000 3.300 ns cwl=6 tck(avg) reserved reserved reserved reserved ns cwl=7 tck(avg) reserved reserved reserved reserved ns cl=6 cwl=5 tck(avg) 2.500 3.300 2.500 3.300 ns cwl=6 tck(avg) reserved reserved rese rved reserved ns cwl=7 tck(avg) reserved reserved reserved reserved ns cl=7 cwl=5 tck(avg) reserved reserved reserved reserved ns cwl=6 tck(avg) 1.875 <2.5 1.875 <2.5 ns cwl=7 tck(avg) reserved reserved reserved reserved ns cl=8 cwl=5 tck(avg) re served reserved reserved reserved ns cwl=6 tck(avg) 1.875 <2.5 1.875 <2.5 ns cwl=7 tck(avg) 1.500 <1.875 reserved reserved ns cl=9 cwl=5 tck(avg) reserved reserved reserved reserved ns cwl=6 tck(avg) reserved reserved reserved reserved ns cwl=7 tck(avg) 1.500 <1.875 1.500 <1.875 ns cl=10 cwl=5 tck(avg) reserved reserved reserved reserved ns cwl=6 tck(avg) reserved reserved reserved reserved ns cwl=7 tck(avg) 1.500 <1.875 1.500 <1.875 ns supported cl settings 5,6,7,8,9,(10) 5,6,7,8,9,(1 0) nck supported cwl settings 5,6,7 5,6,7 nck 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 100 re v 1.0 12 / 200 9 ddr3 - 1600mhz speed bin ddr3 - 1600 unit cl - nrcd - nrp 9 - 9 - 9 ( - dg) 10 - 10 - 10 ( - dh) parameter symbol min max min max internal read command to first data taa 11.250 20.000 12.500 20.000 ns act to interna l read or write delay time trcd 11.250 - 12.500 - ns pre command period trp 11.250 - 12.500 - ns act to act or ref command period trc 46.250 - 47.500 - ns act to pre command period tras 35.000 9*trefi 35.000 9*trefi ns cl=5 cwl =5 tck(avg) 2.50 0 3.300 2.500 3.300 ns cwl =6 tck(avg) reserved reserved reserved reserved ns cwl =7 tck(avg) reserved reserved reserved reserved ns cwl =8 tck(avg) reserved reserved reserved reserved ns cl=6 cwl =5 tck(avg) 2.500 3.300 2.500 3.300 ns cwl =6 tck(avg) 1.875 <2.5 reserved reserved ns cwl =7 tck(avg) reserved reserved reserved reserved ns cwl =8 tck(avg) reserved reserved reserved reserved ns cl=7 cwl =5 tck(avg) reserved reserved reserved reserved ns cwl =6 tck(avg) 1.875 <2.5 1.875 <2.5 ns cwl =7 tck(avg) reserved reserved reserved reserved ns cwl =8 tck(avg) reserved reserved reserved reserved ns cl=8 cwl =5 tck(avg) reserved reserved reserved reserved ns cwl =6 tck(avg) 1.875 <2.5 1.875 <2.5 ns cwl =7 tck(avg) 1.500 < 1.875 reserved reserved ns cwl =8 tck(avg) reserved reserved reserved reserved ns cl=9 cwl =5 tck(avg) reserved reserved reserved reserved ns cwl =6 tck(avg) reserved reserved reserved reserved ns cwl =7 tck(avg) 1.500 <1.875 1.500 <1.875 ns cwl =8 tck(avg) reserved reserved reserved reserved ns cl=10 cwl =5 tck(avg) reserved reserved reserved reserved ns cwl =6 tck(avg) reserved reserved reserved reserved ns cwl =7 tck(avg) 1.500 <1.875 1.500 <1.875 ns cwl =8 tck(avg) 1.250 <1.5 1.250 <1.5 ns cl=11 cwl =5 tck(avg) reserved reserved reserved reserved ns cwl =6 tck(avg) reserved reserved reserved reserved ns cwl =7 tck(avg) reserved reserved reserved reserved ns cwl =8 tck(avg) 1.250 <1.5 1.250 <1.5 ns supported cl settings 5,6 ,7,8,9,10,(11) 5,6,7,8,9,10,(11) nck supported cwl settings 5,6,7,8 5,6,7,8 nck 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 101 re v 1.0 12 / 200 9 electrical characteristics & ac timing timing parameter by speed bin (ddr3 - 800, 1066mhz) parameter symbol ddr3 - 1333 ddr3 - 1600 units notes min. max. min. max. clock ti ming minimum clock cycle time (dll off mode) tck (dll_off) 8 - 8 - ns average clock period tck(avg) refer to "standard speed bins) ps average high pulse width tch(avg) 0.47 0.53 0.47 0.53 tck(avg) average low pulse width tcl(avg) 0. 47 0.53 0.47 0.53 tck(avg) absolute clock period tck(abs) min.: tck(avg)min + tjit(per)min max.: tck(avg)max + tjit(per)max ps absolute clock high pulse width tch(abs) 0.43 - 0.43 - tck(avg) absolute clock low pulse width tcl(abs) 0.43 - 0.43 - tc k(avg) clock period jitter jit(per) - 100 100 - 90 90 ps clock period jitter during dll locking period jit(per, lck) - 90 90 - 80 80 ps cycle to cycle period jitter tjit(cc) 200 200 180 180 ps cycle to cycle period jitter during dll locking period jit(cc, lck) 180 180 160 160 ps duty cycle jitter tjit(duty) - - - - ps cumulative error across 2 cycles terr(2per) - 147 147 - 132 132 ps cumulative error across 3 cycles terr(3per) - 175 175 - 157 157 ps cumulative error across 4 cycles terr(4per ) - 194 194 - 175 175 ps cumulative error across 5 cycles terr(5per) - 209 209 - 188 188 ps cumulative error across 6 cycles terr(6per) - 222 222 - 200 200 ps cumulative error across 7 cycles terr(7per) - 232 232 - 209 209 ps cumulative error across 8 cycles terr(8per) - 241 241 - 217 217 ps cumulative error across 9 cycles terr(9per) - 249 249 - 224 224 ps cumulative error across 10 cycles terr(10per) - 257 257 - 231 231 ps cumulative error across 11 cycles terr(11per) - 263 263 - 237 237 ps cumula tive error across 12 cycles terr(12per) - 269 269 - 242 242 ps cumulative error across n = 13, 14 . . . 49, 50 cycles terr(nper) terr(nper)min = (1 + 0.68ln(n)) * tjit(per)min terr(nper)max = (1 + 0.68ln(n)) * tjit(per)max ps data timing dqs, dqs# to dq skew, per group, per access tdqsq - 200 - 150 ps dq output hold time from dqs, dqs# tqh 0.38 - 0.38 - tck(avg) dq low - impedance time from ck, ck# tlz(dq) - 800 400 - 600 300 ps dq high impedance time from ck, ck# thz(dq) - 400 - 30 0 ps data setup time to dqs, dqs# referenced to vih(ac) / vil(ac) levels tds(base) 75 25 ps data setup time to dqs, dqs# referenced to vih(ac) / vil(ac) levels tds(ac150) 125 75 ps data hold time from dqs, dqs# referenced to vih(dc) / vil( dc) levels tdh(base) 150 100 ps dq and dm input pulse width for each input tdipw 600 490 ps data strobe timing dqs,dqs# differential read preamble trpre 0.9 note 19 0.9 note 19 tck(avg) dqs, dqs# differential read postamble trpst 0.3 note 11 0.3 note 11 tck(avg) dqs, dqs# differential output high time tqsh 0.38 - 0.38 - tck(avg) dqs, dqs# differential output low time tqsl 0.38 - 0.38 - tck(avg) dqs, dqs# differential write preamble twpre 0.9 - 0.9 - tck(avg) dqs, dqs# differential write postamble twpst 0.3 - 0.3 - tck(avg) dqs, dqs# rising edge output access time from rising ck, ck# tdqsck - 400 400 - 300 300 tck(avg) dqs and dqs# low - impedance time (referenced from rl - 1) tlz(dqs) - 800 400 - 600 300 tck(avg) dqs and dqs# high - impedance time (referenced from rl + bl/2) thz(dqs) - 400 - 300 tck(avg) dqs, dqs# differential input low pulse width tdqsl 0.45 0.55 0.45 0.55 tck(avg) dqs, dqs# differential input high pulse width tdqsh 0.45 0.55 0.45 0.55 tck (avg) dqs, dqs# rising edge to ck, ck# rising edge tdqss - 0.25 0.25 - 0.25 0.25 tck(avg) dqs, dqs# falling edge setup time to ck, ck# rising edge tdss 0.2 - 0.2 - tck(avg) dqs, dqs# falling edge hold time from ck, ck# rising edge tdsh 0.2 - 0.2 - t ck(avg) command and address timing dll locking time tdllk 512 - 512 - nck internal read command to precharge command delay trtp trtpmin.: max(4nck, 7.5ns) trtpmax.: - delay from start of internal write twtr twtrmin.: max(4nck, 7.5ns) 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 102 re v 1.0 12 / 200 9 transaction to internal rea d command twtrmax.: write recovery time twr 15 - 15 - ns mode register set command cycle time tmrd 4 - 4 - nck mode register set command update delay tmod tmodmin.: max(12nck, 15ns) tmodmax.: act to interna l read or write delay time trcd pre command period trp act to act or ref command period trc cas# to cas# command delay tccd 4 - 4 - nck auto precharge write recovery + precharge time tdal(min) wr + roundup(trp / tc k(avg)) nck multi - purpose register recovery time tmprr 1 - 1 - nck active to precharge command period tras standard speed bins active to active command period for 1kb page size trrd max(4nck, 10ns) - max(4nck, 7.5ns) - active to active comm and period for 2kb page size trrd trrdmin.: max(4nck, 10ns) trrdmax.: four activate window for 1kb page size tfaw 40 - 37.5 - ns four activate window for 2kb page size tfaw 50 - 50 - ns command and address setup time to ck, ck# referenced to v ih(ac) / vil(ac) levels tis(base) 200 - 125 - ps command and address hold time from ck, ck# referenced to vih(dc) / vil(dc) levels tih(base) 275 - 200 - ps command and address setup time to ck, ck# referenced to vih(ac) / vil(ac) levels tis(base) a c150 200+150 - 125+150 - ps control and address input pulse width for each input tipw 900 - 780 - ps calibration timing - power - up and reset calibration time tzqinit 512 - 512 - nck normal operation full calibration time tzqoper 256 - 256 - nck normal operation short calibration time tzqcs 64 - 64 - nck reset timing exit reset from cke high to a valid command txpr txprmin.: max(5nck, trfc(min) + 10ns) txprmax.: - self refresh timings exit self r efresh to commands not requiring a locked dll txs txsmin.: max(5nck, trfc(min) + 10ns) txsmax.: - exit self refresh to commands requiring a locked dll txsdll txsdllmin.: tdllk(min) txsdllmax.: - nck minimum cke low width for self refresh entry to e xit timing tckesr tckesrmin.: tcke(min) + 1 nck tckesrmax.: - valid clock requirement after self refresh entry (sre) or power - down entry (pde) tcksre tcksremin.: max(5 nck, 10 ns) tcksremax.: - valid clock requirement before self refresh exit (s rx) or power - down exit (pdx) or reset exit tcksrx tcksrxmin.: max(5 nck, 10 ns) tcksrxmax.: - power down timings exit power down with dll on to any valid command; exit precharge power down with dll frozen to commands not requiring a locked dll txp txpmin.: max(3nck, 7.5ns) txpmax.: - exit precharge power down with dll frozen to commands requiring a locked dll txpdll txpdllmin.: max(10nck, 24ns) txpdllmax.: - cke minimum pulse width tcke tckemin.: max(3nck 7.5ns) tckemax.: - command pass disable delay tcpded tcpdedmin.: 1 tcpdedmin.: - nck power down entry to exit timing tpd tpdmin.: tcke(min) tpdmax.: 9*trefi timing of act command to power down entry tactpden tactpdenmin.: 1 tactpdenmax.: - nck timing of pre or prea command to power down entry tprpden tprpdenmin.: 1 tprpdenmax.: - nck timing of rd/rda command to power down entry trdpden trdpdenmin.: rl+4+1 trdpdenmax.: - nck timing of wr command to power down entry (bl8otf, bl8mrs, bc4otf) twrpden twrp denmin.: wl + 4 + (twr / tck(avg)) twrpdenmax.: - nck timing of wra command to power down entry (bl8otf, bl8mrs, bc4otf) twrapden twrapdenmin.: wl+4+wr+1 twrapdenmax.: - nck 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 103 re v 1.0 12 / 200 9 timing of wr command to power down entry (bc4mrs) twrpden twrpdenmin.: wl + 2 + (twr / tck(avg)) twrpdenmax.: - nck timing of wra command to power down entry (bc4mrs) twrapden twrapdenmin.: wl + 2 +wr + 1 twrapdenmax.: - nck timing of ref command to power down entry trefpden trefpdenmin.: 1 trefpdenmax.: - nck timing o f mrs command to power down entry tmrspden tmrspdenmin.: tmod(min) tmrspdenmax.: - odt timings odt high time without write command or with write command and bc4 odth4 odth4min.: 4 odth4max.: - nck odt high time with write command and bl8 odth8 odth8min.: 6 odth8max.: - nck asynchronous rtt turn - on delay (power - down with dll frozen) taonpd 2 8.5 2 8.5 ns asynchronous rtt turn - off delay (power - down with dll frozen) taofpd 2 8.5 2 8.5 ns rtt turn - on taon - 400 400 - 300 300 ps rtt _nom and rtt_wr turn - off time from odtloff reference taof 0.3 0.7 0.3 0.7 tck(avg) rtt dynamic change skew tadc 0.3 0.7 0.3 0.7 tck(avg) write leveling timings first dqs/dqs# rising edge after write leveling mode is programmed twlmrd 40 - 40 - nck dqs/dqs# delay after write leveling mode is programmed twldqsen 25 - 25 - nck write leveling setup time from rising ck, ck# crossing to rising dqs, dqs# crossing twls 325 - 245 - ps write leveling hold time from rising dqs, dqs# c rossing to rising ck, ck# crossing twlh 325 - 245 - ps write leveling output delay twlo 0 9 0 9 ns write leveling output error twloe 0 2 0 2 ns 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 104 re v 1.0 12 / 200 9 electrical characteristics & ac timing timing parameter by speed bin (ddr3 - 1333, 1600mhz) parameter symbol ddr3 - 1333 ddr3 - 1600 units notes min. max. min. max. clock timing minimum clock cycle time (dll off mode) tck (dll_off) 8 - 8 - ns average clock period tck(avg) refer to "standard speed bins) ps average high pulse width tch (avg) 0.47 0.53 0.47 0.53 tck(avg) average low pulse width tcl(avg) 0.47 0.53 0.47 0.53 tck(avg) absolute clock period tck(abs) min.: tck(avg)min + tjit(per)min max.: tck(avg)max + tjit(per)max ps absolute clock high pulse width tch(abs) 0.43 - 0. 43 - tck(avg) absolute clock low pulse width tcl(abs) 0.43 - 0.43 - tck(avg) clock period jitter jit(per) - 80 80 - 70 70 ps clock period jitter during dll locking period jit(per, lck) - 70 70 - 60 60 ps cycle to cycle period jitter tjit(cc) 160 16 0 140 140 ps cycle to cycle period jitter during dll locking period jit(cc, lck) 140 140 120 120 ps duty cycle jitter tjit(duty) - - - - ps cumulative error across 2 cycles terr(2per) - 118 118 - 103 103 ps cumulative error across 3 cycles terr(3 per) - 140 140 - 122 122 ps cumulative error across 4 cycles terr(4per) - 155 155 - 136 136 ps cumulative error across 5 cycles terr(5per) - 168 168 - 147 147 ps cumulative error across 6 cycles terr(6per) - 177 177 - 155 155 ps cumulative error across 7 cycles terr(7per) - 186 186 - 163 163 ps cumulative error across 8 cycles terr(8per) - 193 193 - 169 169 ps cumulative error across 9 cycles terr(9per) - 200 200 - 175 175 ps cumulative error across 10 cycles terr(10per) - 205 205 - 180 180 ps cumul ative error across 11 cycles terr(11per) - 210 210 - 184 184 ps cumulative error across 12 cycles terr(12per) - 215 215 - 188 188 ps cumulative error across n = 13, 14 . . . 49, 50 cycles terr(nper) terr(nper)min = (1 + 0.68ln(n)) * tjit(per)min terr(np er)max = (1 + 0.68ln(n)) * tjit(per)max ps data timing dqs, dqs# to dq skew, per group, per access tdqsq - 125 - 100 ps dq output hold time from dqs, dqs# tqh 0.38 - 0.38 - tck(avg) dq low - impedance time from ck, ck# tlz(dq) - 500 25 0 - 450 225 ps dq high impedance time from ck, ck# thz(dq) - 250 - 225 ps data setup time to dqs, dqs# referenced to vih(ac) / vil(ac) levels tds(base) 30 10 ps data setup time to dqs, dqs# referenced to vih(ac) / vil(ac) levels tds(ac150) - - ps data hold time from dqs, dqs# referenced to vih(dc) / vil(dc) levels tdh(base) 65 45 ps dq and dm input pulse width for each input tdipw 400 - 360 ps data strobe timing dqs,dqs# differential read preamble trpre 0.9 note 19 0.9 note 19 tck(avg) dqs, dqs# differential read postamble trpst 0.3 note 11 0.3 note 11 tck(avg) dqs, dqs# differential output high time tqsh 0.4 - 0.4 - tck(avg) dqs, dqs# differential output low time tqsl 0.4 - 0.4 - tck(avg) dqs, dqs# d ifferential write preamble twpre 0.9 - 0.9 - tck(avg) dqs, dqs# differential write postamble twpst 0.3 - 0.3 - tck(avg) dqs, dqs# rising edge output access time from rising ck, ck# tdqsck - 255 255 - 225 225 tck(avg) dqs and dqs# low - impedance time (referenced from rl - 1) tlz(dqs) - 500 250 - 450 225 tck(avg) dqs and dqs# high - impedance time (referenced from rl + bl/2) thz(dqs) - 250 - 225 tck(avg) dqs, dqs# differential input low pulse width tdqsl 0.4 0.6 0.45 0.55 tck(avg) dqs, dqs# diffe rential input high pulse width tdqsh 0.4 0.6 0.45 0.55 tck(avg) dqs, dqs# rising edge to ck, ck# rising edge tdqss - 0.25 0.25 - 0.27 0.27 tck(avg) dqs, dqs# falling edge setup time to ck, ck# rising edge tdss 0.2 - 0.18 - tck(avg) dqs, dqs# falling edge hold time from ck, ck# rising edge tdsh 0.2 - 0.18 - tck(avg) command and address timing dll locking time tdllk 512 - 512 - nck internal read command to precharge command delay trtp trtpmin.: max(4nck, 7.5ns) trtpmax.: - del ay from start of internal write twtr twtrmin.: max(4nck, 7.5ns) 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 105 re v 1.0 12 / 200 9 transaction to internal read command twtrmax.: write recovery time twr 15 - 15 - ns mode register set command cycle time tmrd 4 - 4 - nck mode register set command update delay tm od tmodmin.: max(12nck, 15ns) tmodmax.: act to internal read or write delay time trcd pre command period trp act to act or ref command period trc cas# to cas# command delay tccd 4 - 4 - nck auto precharge wri te recovery + precharge time tdal(min) wr + roundup(trp / tck(avg)) nck multi - purpose register recovery time tmprr 1 - 1 - nck active to precharge command period tras standard speed bins active to active command period for 1kb page size trrd trr dmin.: max(4nck, 6ns) trrdmax.: active to active command period for 2kb page size trrd trrdmin.: max(4nck, 7.5ns) trrdmax.: four activate window for 1kb page size tfaw 30 0 30 - ns four activate window for 2kb page size tfaw 45 0 40 - ns command and address setup time to ck, ck# referenced to vih(ac) / vil(ac) levels tis(base) 65 - 45 - ps command and address hold time from ck, ck# referenced to vih(dc) / vil(dc) levels tih(base) 140 - 120 - ps command and address setup time to ck, ck# referenced to vih(ac) / vil(ac) levels tis(base) ac150 65+125 - 45+125 - ps control and address input pulse width for each input tipw 620 - 560 - ps calibration timing power - up and reset calibration time tzqinit 512 - 512 - nck normal operation full calibration time tzqoper 256 - 256 - nck normal operation short calibration time tzqcs 64 - 64 - nck reset timing exit reset from cke high to a valid command txpr txprmin.: max(5nck, trfc(min) + 10ns) txprmax.: - self refresh timings exit self refresh to commands not requiring a locked dll txs txsmin.: max(5nck, trfc(min) + 10ns) txsmax.: - exit self refresh to commands requiring a locked dll txsdll txsdllmin.: tdllk(min) txsdllmax.: - nc k minimum cke low width for self refresh entry to exit timing tckesr tckesrmin.: tcke(min) + 1 nck tckesrmax.: - valid clock requirement after self refresh entry (sre) or power - down entry (pde) tcksre tcksremin.: max(5 nck, 10 ns) tcksremax.: - valid clock requirement before self refresh exit (srx) or power - down exit (pdx) or reset exit tcksrx tcksrxmin.: max(5 nck, 10 ns) tcksrxmax.: - power down timings exit power down with dll on to any valid command; exit precharge po wer down with dll frozen to commands not requiring a locked dll txp txpmin.: max(3nck, 7.5ns) txpmax.: - exit precharge power down with dll frozen to commands requiring a locked dll txpdll txpdllmin.: max(10nck, 24ns) txpdllmax.: - cke minimum pulse width tcke tckemin.: max(3nck 7.5ns) tckemax.: - command pass disable delay tcpded tcpdedmin.: 1 tcpdedmin.: - nck power down entry to exit timing tpd tpdmin.: tcke(min) tpdmax.: 9*trefi timing of act command to power down entry tactpde n tactpdenmin.: 1 tactpdenmax.: - nck timing of pre or prea command to power down entry tprpden tprpdenmin.: 1 tprpdenmax.: - nck timing of rd/rda command to power down entry trdpden trdpdenmin.: rl+4+1 trdpdenmax.: - nck timing of wr command to p ower down entry (bl8otf, bl8mrs, bc4otf) twrpden twrpdenmin.: wl + 4 + (twr / tck(avg)) twrpdenmax.: - nck timing of wra command to power down entry (bl8otf, bl8mrs, bc4otf) twrapden twrapdenmin.: wl+4+wr+1 twrapdenmax.: - nck 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 106 re v 1.0 12 / 200 9 timing of wr command to power down entry (bc4mrs) twrpden twrpdenmin.: wl + 2 + (twr / tck(avg)) twrpdenmax.: - nck timing of wra command to power down entry (bc4mrs) twrapden twrapdenmin.: wl + 2 +wr + 1 twrapdenmax.: - nck timing of ref command to power down entry tr efpden trefpdenmin.: 1 trefpdenmax.: - nck timing of mrs command to power down entry tmrspden tmrspdenmin.: tmod(min) tmrspdenmax.: - odt timings odt high time without write command or with write command and bc4 odth4 odth4min.: 4 odth4ma x.: - nck odt high time with write command and bl8 odth8 odth8min.: 6 odth8max.: - nck asynchronous rtt turn - on delay (power - down with dll frozen) taonpd 2 8.5 2 8.5 ns asynchronous rtt turn - off delay (power - down with dll frozen) taofpd 2 8.5 2 8.5 ns rtt turn - on taon - 250 250 - 225 225 ps rtt_nom and rtt_wr turn - off time from odtloff reference taof 0.3 0.7 0.3 0.7 tck(avg) rtt dynamic change skew tadc 0.3 0.7 0.3 0.7 tck(avg) write leveling timings first dqs/dqs# risin g edge after write leveling mode is programmed twlmrd 40 - 40 - nck dqs/dqs# delay after write leveling mode is programmed twldqsen 25 - 25 - nck write leveling setup time from rising ck, ck# crossing to rising dqs, dqs# crossing twls 195 - 165 - p s write leveling hold time from rising dqs, dqs# crossing to rising ck, ck# crossing twlh 195 - 165 - ps write leveling output delay twlo 0 9 0 7.5 ns write leveling output error twloe 0 2 0 2 ns 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 107 re v 1.0 12 / 200 9 jitter notes specific note a unit tck(avg) represents the actual tck(avg) of the input clock under operation. unit nck represents one clock cycle of the input clock, counting the actual clock edges. ex) tmrd=4 [nck] means; if one mode register set command is regis - tered at tm, anther mode registe r set command may be registered at tm+4, even if (tm+4 - tm) is 4 x tck(avg) + terr(4per), min. specific note b these parameters are measured from a command/address signal (cke, cs, ras, cas, we, odt, ba0, a0, a1, etc) tran sition edge to its respective clo ck signal (ck/ck) crossing. the spec values are not affected by the amount of clock jitter applied (i.e. tjit(per), tjit(cc), etc.), as the setup and hold are relative to the clock signal crossing that latches the com mand/address. that is, these parameter s should be met whether clock jitter is present or not. specific note c these parameters are measured from a data strobe signal (dqs(l/u), dqs(l/u)) crossing to its respective clock signal (ck, ck) crossing. the spec values are not affected by the amount of clock jitter applied (i.e. tjit(per), tjit(cc), etc), as these are relative to the clock signal crossing. that is, these parameters should be met whether clock jitter is present or not. specific note d these parameters are measured from a data signal (d m(l/u), dq(l/u)0, dq(l/u)1, etc.) transition edge to its respective data strobe signal (dqs(l/u), dqs(l/u)) crossing. specific note e for these parameters, the ddr3 sdram device supports tnparam [nck] = ru{tparam[ns] / tck(avg)[ns]}, which is in clock cycl es, assuming all input clock jitter specifications are satisfied. for example, the device will support tnrp = ru{trp/tck(avg)}, which is in clock cycles, if all input clock jitter specifications are met. this means: for ddr3 - 800 6 - 6 - 6, of which trp = 15ns, the device will support tnrp = ru{trp/tck(avg)} = 6, as long as the input clock jitter specifications are met, i.e. precharge command at tm and active command at tm+6 is valid even if (tm+6 - tm) is less than 15ns due to input clock jitter. specific note f when the device is operated with input clock jitter, this parameter needs to be derated by the actual terr(mper), act of the input clock, where 2 <= m <=12. (output derating are relative to the sdram input clock.) for example, if the measured jitter into a ddr3 - 800 sdram has terr(mper),act,min = - 172ps and terr(mper),act,max = 193ps, then tdqsck,min(derated) = tdqsck,min - terr(mper),act,max = - 400ps - 193ps = - 593ps and tdqsck,max(derated) = tdqsck,max - terr(mper),act,min = 400ps + 172ps = 572ps. similar ly, tlz(dq) for ddr3 - 800 derates to tlz(dq),min(derated) = - 800ps - 193ps = - 993ps and tlz(dq),max(derated) = 400ps + 172ps = 572ps. (caution on the min/max usage!) note that terr(mper),act,min is the minimum measured value of terr(nper) where 2 <= n <= 12 , and terr(mper),act,max is the maximum measured value of terr(nper) where 2 <= n <= 12. specific note g when the device is operated with input clock jitter, this parameter needs to be derated by the actual tjit(per),act of the input clock. (output deratin gs are relative to the sdram input clock.) for example, if the measured jitter into a ddr3 - 800 sdram has tck(avg),act=2500ps, tjit(per),act,min = - 72ps and tjit(per),act,max = 93ps, then trpre,min(derated) = trpre,min + tjit(per),act,min = 0.9 x tck(avg),a ct + tjit(per),act,min = 0.9 x 2500ps - 72ps = 2178ps. similarly, tqh,min(derated) = tqh,min + tjit(per),act,min = 0.38 x tck(avg),act + tjit(per),act,min = 0.38 x 2500ps - 72ps = 878ps. (caution on the min/max usage!) 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 108 re v 1.0 12 / 200 9 timing parameter notes 1. actual value dependent upon measurement level definitions which are tbd. 2. commands requiring a locked dll are: read ( and rap) are synchronous odt commands. 3. the max values are system dependent. 4. wr as programmed in mode register. 5. value must be rouned - up to next higher i nteger value. 6. there is no maximum cycle time limit besides the need to satisfy the refresh interval, trefi. 7. for definition of rtt - on time taon see timing parameters. 8. for definition of rtt - off time taof see timing parameters. 9. twr is defined in ns, for calculation of twrpden it is necessary to round up twr / tck to the next integer. 10. wr in clock cycles are programmed in mr0. 11. the maximum read postamble is bonded by tdqsck(min) plus tqsh(min) on the left side and thz(dqs)max on the right side. 12. output timing deratings are relative to the sdram input clock. when the device is operated with input clock jitter, this parameter needs to be derated by tbd. 13. value is only valid for ron34. 14. single ended signal parameter. 15. trefi depends on tope r. 16. tis(base) and tih(base) values are for 1v/ns cmd/add single - ended slew rate and 2v/ns ck, ck differential slew rate. note for dq and dm signals, vref(dc)=vrefdq(dc). for input only pins except reset, vref(dc)=vrefca(dc). 17. tds(base) and tdh(base) values are for 1v/ns dq single - ended slew rate and 2v/ns dqs, dqs differential slew rate. note for dq and dm signals, vref(dc)=vrefdq(dc). for input only pins except reset, vref(dc)=vrefca(dc). 18. start of internal write transaction is defined as follows: for bl8 ( fixed by mrs and on - the - fly): rising clock edge 4 clock cycles after wl. for bc4 (on - the - fly): rising clock edge 4 clock cycles after wl. for bc4 (fixed by mrs): rising clock edge 2 clock cycles after wl. 19. the maximum preamble is bound by tlz(dqs)max on the left side and tdqsck(max) on the right side. 20. cke is allowed to be registered low while operations such as row activation, precharge, autoprecharge or refresh are in progress, but power - down idd spec will not be applied until finishing those operations. 21. al though cke is allowed to be registered low after a refresh command once trefpden(min) is satisfied, there are cases where additional time such as txpdll(min) is also required. 22. defined between end of mpr read burst and mrs which reloads mpr or disables mpr function. 23. one zqcs command can effectively correct a minimum of 0.5% (zqcorrection) of ron and rtt impedance error within 64 nck for all speed bins assuming the maximum sensitivities specified in the output driver voltage and temperature sensitivity an d odt voltage and temperature sensitivity tables. the appropriate interval between zqcs commands can be determined from these tables and other application - specific parameters. one method for calculating the interval between zqcs commands, given the tempe rature (tdriftrate) and voltage (vdrift rate) drift rates that the sdram is subject to in the application, is illustrated. the interval could be defined by the following formula: zqcorrection / [(tsens x tdriftrate) + (vsens x vdriftrate)] where tsens = ma x(drttdt, drondtm) and vsens = max(drttdv, drondvm) define the sdram temperature and voltage sensitivities. for example, if tsens = 1.5%/c, vsens = 0.15%/mv, tdriftrate = 1 c/sec and vdriftrate = 15mv/sec, then the interval between zqcs commands is calcul ated as 0.5 / [(1.5x1)+(0.15x15)] = 0.133 ~ 128ms 24. n = from 13 cycles to 50 cycles. this row defines 38 parameters. 25. tch(abs) is the absolute instantaneous clock high pulse width, as measured from one rising edge to the following falling edge. 26. tcl(abs) is th e absolute instantaneous clock low pulse width, as measured from one falling edge to the following rising edge. 27. the tis(base) ac150 specifications are adjusted from the tis(base) specification by adding an additional 100ps of derating to accommodate for th e lower altemate threshold of 150mv and another 25ps to account for the earlier reference point [(175mv - 150mv) / 1v/ns]. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 109 re v 1.0 12 / 200 9 address / command setup, hold, and de - rating for all input signals the total tis (setup time) and tih (hold time) required is calcu lated by adding the data sheet tis(base) and tih(base) and tih(base) value to the delta tis and delta tih derating value respectively. example: tis (total setup time) = tis(base) + delta tis setup (tis) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of vref(dc) and the first crossing of vih(ac)min. setup (tis) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of vref(dc) and the first crossing of vil(ac)max. if the act ual signal is always earlier than the nominal slew rate line between shaded ?vref(dc) to ac region?, use nominal slew rate for derating value. if the actual signal is later than the nominal slew rate line anywhere between shaded ?vref(dc) to ac region?, th e slew rate of the tangent line to the actual signal from the ac level to dc level is used for derating value. hold (tih) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of vil(dc)max and the first crossing of v ref(dc). hold (tih) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of vih(dc)min and the first crossing of vref(dc). if the actual signal is always later than the nominal slew rate li ne between shaded ?dc to vr ef(dc) region?, use nominal slew rate for derating value. if the actual signal is earlier than the nominal slew rate line any where between shaded ?dc to vref(dc) region?, the slew rate of a tangent line to the actual signal from the dc level to vref(dc) l evel is used for derating value. for a valid transition the input signal has to remain above/below vih/il(ac) for some time tvac. although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached vih/il(ac ) at the time of the rising clock transition) a valid input signal is still required to complete the transition and reach vih/il(ac). add/cmd setup and hold base - values for 1v/ns unit [ps] ddr3 - 800 ddr3 - 1066 ddr3 - 1333 ddr3 - 1600 reference ( - ac/ - ad) ( - be / - bf) ( - cf/ - cg) ( - dg/ - dh) tis(base) 200 125 65 45 vih/l(ac) tih(base) 275 200 140 120 vih/l(dc) tih(base) ac150 200+150 125+150 65+125 45+125 vih/l(dc) note: 1. (ac/dc referenced for 1v/ns dq - slew rate and 2v/ns dqs slew rate. 2. the tis(base) ac150 specifications are adjusted from the tis(base) specification by adding an additional 100ps of derating to accommodate for the lower alternate threshold of 150mv and another 25ps to account for the earlier reference point [(175mv - 150mv) / 1v/ns]. 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 110 re v 1.0 12 / 200 9 de - rating values ddr3 - 800/ 1066 /1333/1600 t i s/t i h C (ac175) de - rating values ddr3 - 800/1066/1333/1600 t i s/t i h C (ac150) required time t vac above vih(ac) {below vil(ac)} for valid transition slew rate [v/ns] tvac@175mv [ps] tvac@175mv [ps] min max min max >2.0 75 - 175 - 2 57 - 170 - 1.5 50 - 167 - 1 38 - 163 - 0.9 34 - 162 - 0.8 29 - 161 - 0.7 22 - 159 - 0.6 13 - 155 - 0.5 0 - 150 - <0.5 0 - 150 - d tis d tih d tis d tih d tis d tih d tis d tih d tis d tih d tis d tih d tis d tih d tis d tih 2 88 50 88 50 88 50 96 58 104 66 112 74 120 84 128 100 1.5 59 34 59 34 59 34 67 42 75 50 83 58 91 68 99 84 1 0 0 0 0 0 0 8 8 16 16 24 24 32 34 40 50 0.9 -2 -4 -2 -4 -2 -4 6 4 14 12 22 20 30 30 38 46 0.8 -6 -10 -6 -10 -6 -10 2 -2 10 6 18 14 26 24 34 40 0.7 -11 -16 -11 -16 -11 -16 -3 -8 5 0 13 8 21 18 29 34 0.6 -17 -26 -17 -26 -17 -26 -9 -18 -1 -10 7 -2 15 8 23 24 0.5 -35 -40 -35 -40 -35 -40 -27 -32 -19 -24 -11 -16 -2 -6 5 10 0.4 -62 -60 -62 -60 -62 -60 -54 -52 -46 -44 -38 -36 -30 -26 -22 -10 1.2 v/ns dq slew rate (v/ns) 4.0 v/ns 3.0 v/ns dqs, ??? differential slew rate delta tis, delta tih derating in ac/dc based 2.0 v/ns 1.8 v/ns 1.6 v/ns 1.4 v/ns 1.0 v/ns d tis d tih d tis d tih d tis d tih d tis d tih d tis d tih d tis d tih d tis d tih d tis d tih 2 75 50 75 50 75 50 83 58 91 66 99 74 107 84 115 100 1.5 50 34 50 34 50 34 58 42 66 50 74 58 82 68 90 84 1 0 0 0 0 0 0 8 8 16 16 24 24 32 34 40 50 0.9 0 -4 0 -4 0 -4 8 4 16 12 24 20 32 30 40 46 0.8 0 -10 0 -10 0 -10 8 -2 16 6 24 14 32 24 40 40 0.7 0 -16 0 -16 0 -16 8 -8 16 0 24 8 32 18 40 34 0.6 -1 -26 -1 -26 -1 -26 7 -18 15 -10 23 -2 31 8 39 24 0.5 -10 -40 -10 -40 -10 -40 -2 -32 6 -24 14 -16 22 -6 30 10 0.4 -25 -60 -25 -60 -25 -60 -17 -52 -9 -44 -1 -36 7 -26 15 -10 1.0 v/ns 1.2 v/ns dq slew rate (v/ns) 4.0 v/ns 3.0 v/ns dqs, ??? differential slew rate delta tis, delta tih derating in ac/dc based 2.0 v/ns 1.8 v/ns 1.6 v/ns 1.4 v/ns 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 111 re v 1.0 12 / 200 9 data setup, hold, and slew rate de - rating for all input signals the total tds (se tup time) and tdh (hold time) required is calculated by adding the data sheet tdh(base) and tdh(base) value to the delta tds and delta tdh derating value respectively. example: tds (total setup time) = tds(base) + delta tds setup (tds) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of vref(dc) and the first crossing of vih(ac)min. setup (tds) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of vref(dc) and the first c rossing of vil(ac)max. if the actual signal is always earlier than the nominal slew rate line between shaded ?vref(dc) to ac region?, use nominal slew rate for derating value. if the actual signal is later than the nominal slew rate line anywhere between s haded ?vref(dc) to ac region?, the slew rate of the tangent line to the actual signal from the ac level to dc level is used for derating value. hold (tdh) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of vil(d c)max and the first crossing of vref(dc). hold (tdh) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of vih(dc)min and the first crossing of vref(dc). if the actual signal is always later than the nominal slew r ate line between shaded ?dc level to vref(dc) region?, use nominal slew rate for derating value. if the actual signal is earlier than the nominal slew rate line anywhere between shaded ?dc to vref(dc) region?, the slew rate of a tangent line to the actual signal from the dc level to vref(dc) level is used for derating value. for a valid transition the input signal has to remain above/below vih/il(ac) for some time tvac. although for slow slew rates the total setup time might be negative (i.e. a valid inpu t signal will not have reached vih/il(ac) at the time of the rising clock transition) a valid input signal is still required to complete the transition and reach vih/i l(ac). for slew rates in between the values listed in the following tables, the derating values may be obtained by linear interpolation. these values are typically not subject to production test. they are verified by design and characterization. data setup and hold base - values unit [ps] ddr3 - 800 ( - ac/ - ad) ddr3 - 1066 ( - be / - bf ) ddr3 - 1333 ( - c f/ - cg) ddr3 - 1 600 ( - dg / - dh ) reference tds(base) 75 25 3 0 10 vih/l(ac) tds(ac150) 75+50 25+50 - - vih/l(ac) tdh(base) 150 100 65 45 vih/l(dc) note: ac/dc referenced for 1v/ns dq - slew rate and 2v/ns dqs slew rate 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 112 re v 1.0 12 / 200 9 de - rating values ddr3 - 800/ 1066 /1333/ 1600 t d s/t d h C (ac175) de - rating values ddr3 - 800/1066/ 1333 /1600 t d s/t d h C (ac150) required time t vac above vih(ac) {below vil(ac)} for valid transition slew rate [v/ns] ddr3 - 800/1066 (ac175) ddr3 - 1333 /1600 (ac150) t vac [ps] t vac [ps] min max min max >2.0 75 - 1 75 - 2 57 - 170 - 1.5 50 - 167 - 1 38 - 163 - 0.9 34 - 162 - 0.8 29 - 161 - 0.7 22 - 159 - 0.6 13 - 155 - 0.5 0 - 15 5 - <0.5 0 - 150 - d tds d tdh d tds d tdh d tds d tdh d tds d tdh d tds d tdh d tds d tdh d tds d tdh d tds d tdh 2 88 50 88 50 88 50 - - - - - - - - - - 1.5 59 34 59 34 59 34 67 42 - - - - - - - - 1 0 0 0 0 0 0 8 8 16 16 - - - - - - 0.9 - - -2 -4 -2 -4 6 4 14 12 22 20 - - - - 0.8 - - - - -6 -10 2 -2 10 6 18 14 26 24 - - 0.7 - - - - - - -3 -8 5 0 13 8 21 18 29 34 0.6 - - - - - - - - -1 -10 7 -2 15 8 23 24 0.5 - - - - - - - - - - -11 -16 -2 -6 5 10 0.4 - - - - - - - - - - - - -30 -26 -22 -10 1.2 v/ns dq slew rate (v/ns) 4.0 v/ns 3.0 v/ns dqs, ??? differential slew rate delta tds, delta tdh derating in ac/dc based 2.0 v/ns 1.8 v/ns 1.6 v/ns 1.4 v/ns 1.0 v/ns d tds d tdh d tds d tdh d tds d tdh d tds d tdh d tds d tdh d tds d tdh d tds d tdh d tds d tdh 2 75 50 75 50 75 50 - - - - - - - - - - 1.5 50 34 50 34 50 34 58 42 - - - - - - - - 1 0 0 0 0 0 0 8 8 16 16 - - - - - - 0.9 - - 0 -4 0 -4 8 4 16 12 24 20 - - - - 0.8 - - - - 0 -10 8 -2 16 6 24 14 32 24 - - 0.7 - - - - - - 8 -8 16 0 24 8 32 18 40 34 0.6 - - - - - - - - 15 -10 23 -2 31 8 39 24 0.5 - - - - - - - - - - 14 -16 22 -6 30 10 0.4 - - - - - - - - - - - - 7 -26 15 -10 1.0 v/ns 1.2 v/ns dq slew rate (v/ns) 4.0 v/ns 3.0 v/ns dqs, ??? differential slew rate delta tds, delta tdh derating in ac/dc based 2.0 v/ns 1.8 v/ns 1.6 v/ns 1.4 v/ns 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 113 re v 1.0 12 / 200 9 package dimensions ( x4 ; 78 balls; 0.8mmx0.8mm pitch; bga) 0 . 8 6 . 4 0 . 8 8 . 0 + / - 0 . 1 1 0 . 5 + / - 0 . 1 p i n a 1 i n d e x p i n a 1 i n d e x m i n . 0 . 3 0 m a x . 0 . 4 0 m a x . 1 . 3 9 t o p v i e w b o t t o m v i e w 9 . 6 m i n . 0 . 4 2 m a x . 0 . 5 2 7 8 b a l l s u n i t s : m m 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 114 re v 1.0 12 / 200 9 package dimensions ( x8 ; 78 balls; 0.8mmx0.8mm pitch; bga) 0 . 8 6 . 4 0 . 8 8 . 0 + / - 0 . 1 1 0 . 5 + / - 0 . 1 p i n a 1 i n d e x p i n a 1 i n d e x m i n . 0 . 3 0 m a x . 0 . 4 0 m a x . 1 . 3 9 t o p v i e w b o t t o m v i e w 9 . 6 m i n . 0 . 4 2 m a x . 0 . 5 2 7 8 b a l l s u n i t s : m m 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 115 re v 1.0 12 / 200 9 revision log rev date modification 0.1 10 /200 9 preliminary release 1.0 12 /2009 official release 1gb ddr3 sdram c - die nt5cb 256 m 4 cn / nt5cb128m8cn 116 re v 1.0 12 / 200 9 n anya technology corporation. all ri ghts reserved. printed in taiwan, r.o.c., 2006 the following are trademarks of nanya technology corporation in r.o.c, or other countries, or both. nanya and nanya logo other company, product and service names may be trademarks or service marks of others. nanya technology corporation (ntc) reserves the right to make changes without notice. ntc warrants performance of its semiconductor products and related software to the specifications applicable at the time of sale in accordance with ntc?s standard warrant y. testing and other quality control techniques are utilized to the extent ntc deems necessary to support this warranty. specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. certa in applications using semiconductor products may involve potential risks of death, personal injury, or severe property or environmental damage (critical applications). ntc semiconductor products are not designed, intend, authorized, or warranted to be su itable for use in life - support applications, devices or systems or other critical applications. inclusion of ntc products in such applications is understood to be fully at the risk of the customer. use of ntc products in such applications requires the writ ten approval of an appropriate ntc officer. question concerning potential risk applications should be directed to ntc through a local sales office. in order to minimize risks associated with the customer?s applications, adequate design and operating safegu ards should be provided by customer to minimize the inherent or procedural hazards.ntc assumes no liability of applications assistance, customer product design, software performance, or infringement of patents or services described herein. nor does ntc war rant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of ntc covering or relating to any combination, machine, or process in which such semiconduct or products or services might be or are used. nanya technology corporation hwa ya technology park 669, fu hsing 3rd rd., kueishan, taoyuan, taiwan, r.o.c. the nanya technology corporation home page can be found at http: \ \ www.nanya.com ? |
Price & Availability of NT5CB256M4CN-AC
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |